臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

关于TAIR
	计画说明

浏览
	典藏机构
	作者
	题名
	日期
	统计图表
	机构即时统计
	学术趋势

消息
	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

著作权
	出版社及期刊政策查询
	TAIR著作权会议记录

相关连结
	機構典藏計畫網站
	ROAR
	OpenDOAR
	SHERPA
	OAIster
	JAIRO
	Ira
	DSPACE
	RWWR
	臺大學術典藏NTU Scholars

"j b kuo"的相关文件

回到依作者浏览
依题名排序	依日期排序

显示项目 91-115 / 176 (共8页)
<< < 1 2 3 4 5 6 7 8 > >>
每页显示[10|25|50]项目

机构	日期	题名	作者
臺大學術典藏	2018-09-10T07:41:36Z	Temperature-Dependent Kink Effect Model for Partially-Depleted SOI NMOS Devices	S. C Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:36Z	Bandgap Narrowing	J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:36Z	Closed-Form Partitioned Gate Tunneling Current Model for NMOS Devices with an Ultra-thin Gate Oxide	C. H. Lin;J. B. Kuo; C. H. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:36Z	Closed-Form Partitioned Gate Tunneling Current Model for NMOS Devices with an Ultra-thin Gate Oxide	C. H. Lin;J. B. Kuo; C. H. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:36Z	Compact MOS/Bipolar Charge-Control Model of Partially-Depleted SOI CMOS Devices for VLSI Circuit Simulation---SOI-Technology (ST)-SPICE	J. B. Kuo; K. W. Su; S. C. Lin; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:36Z	A Novel 0.7V Two-Port 6T SRAM Memory Cell Structure with Single-Bit-Line Simultaneous Read-and-Write Access (SBLSRWA) Capability using Partially Depleted SOI Dynamic-Threshold Technique	S. C. Liu; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:36Z	Semiconductor R&D in Taiwan	J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:35Z	A CMOS Semi-Static Latch Circuit without Charge Sharing and Leakage Current Problems	P. F. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:35Z	A Low-Voltage Semi-Dynamic DCVSPG-Domino Logic Circuit	J. H. Lou; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:35Z	Modeling of Deep-Submicron SOI CMOS VLSI Devices	J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:19Z	Gate-Level Dual-Threshold Total Power Optimization Methodology (GDTPOM) Principle for Designing High-Speed Low-Power SOC Applications	R. Chen; R. Liu; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:19Z	Analysis of STI Mechanical-Stress Induced Effects on 40nm PD SOI NMOS Devices	J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:19Z	Analysis of STI Mechanical-Stress Induced Effects on 40nm PD SOI NMOS Devices	J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:19Z	Transient Behavior of 40nm PD SOI NMOS Device Considering STI-Induced Mechanical Stress Effects	J. S. Su;J. B. Kuo; J. S. Su; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:19Z	Transient Behavior of 40nm PD SOI NMOS Device Considering STI-Induced Mechanical Stress Effects	J. S. Su;J. B. Kuo; J. S. Su; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:19Z	STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Device	H. J. Hung;J. I. Lu;J. B. Kuo;G. S. Lin;C. S. Yeh;C. T. Tsai;M. Ma; H. J. Hung; J. I. Lu; J. B. Kuo; G. S. Lin; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:19Z	STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Device	H. J. Hung;J. I. Lu;J. B. Kuo;G. S. Lin;C. S. Yeh;C. T. Tsai;M. Ma; H. J. Hung; J. I. Lu; J. B. Kuo; G. S. Lin; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:19Z	Compact Modeling of Sub-90nm CMOS VLSI Devices Considering Fringing Electric Field Effects	J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:19Z	Compact Modeling of Sub-90nm CMOS VLSI Devices Considering Fringing Electric Field Effects	J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:19Z	CMOS VLSI Engineering: Silicon-on-Insulator (SOI)	J. B. Kuo; K. W. Su; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:18Z	Gate-Level Dual-Threshold Static Power Optimization Methodology (GDSPOM) Using Path-Based Static Timing Analysis (STA) Technique for SOC Application	JAMES-B KUO; B. Chung; J. B. Kuo
臺大學術典藏	2018-09-10T07:08:18Z	Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect	I. S. Lin;V. C. Su;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:18Z	Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect	I. S. Lin;V. C. Su;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:18Z	Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device	I. S. Lin;V. C. Su;J. B. Kuo;R. Lee;G. S. Lin;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:18Z	Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device	I. S. Lin;V. C. Su;J. B. Kuo;R. Lee;G. S. Lin;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO

显示项目 91-115 / 176 (共8页)
<< < 1 2 3 4 5 6 7 8 > >>
每页显示[10|25|50]项目

	English \| 正體中文 \| 简体中文 \| 总笔数 :0
	造访人次 : 50686705 在线人数 : 248 教育部委托研究计画计画执行:国立台湾大学图书馆