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機構	日期	題名	作者
臺大學術典藏	2018-09-10T07:08:18Z	Gate-Level Dual-Threshold Static Power Optimization Methodology (GDSPOM) Using Path-Based Static Timing Analysis (STA) Technique for SOC Application	JAMES-B KUO; B. Chung; J. B. Kuo
臺大學術典藏	2018-09-10T07:08:18Z	Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect	I. S. Lin;V. C. Su;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:18Z	Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect	I. S. Lin;V. C. Su;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:18Z	Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device	I. S. Lin;V. C. Su;J. B. Kuo;R. Lee;G. S. Lin;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:18Z	Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device	I. S. Lin;V. C. Su;J. B. Kuo;R. Lee;G. S. Lin;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:18Z	Analysis of STI-induced mechanical stress-related Kink effect of 40 nm PD SOI NMOS devices biased in saturation region	I. S. Lin;J. B. Kuo; I. S. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:18Z	Analysis of STI-induced mechanical stress-related Kink effect of 40 nm PD SOI NMOS devices biased in saturation region	I. S. Lin;J. B. Kuo; I. S. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:18Z	STI-Induced Mechanical-Stress-Related Kink Effect of 40nm PD SOI NMOS Devices	I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:18Z	Analysis of STI Mechanical-Stress Induced Effects of Nanometer PD SOI NMOS Devices	J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:18Z	Analysis of STI Mechanical-Stress Induced Effects of Nanometer PD SOI NMOS Devices	J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:18Z	STI-Induced Mechanical Stress-Related Breakdown Behavior of 40nm PD SOI NMOS Devices	J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏	2018-09-10T06:35:01Z	Modeling the Drain Current of DG FD SOI NMOS Devices with N+/P+ Top/Bottom Gate	C. H. Hsu; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T06:35:00Z	Triple Threshold Static Power Minimization in High-Level Synthesis of VLSI CMOS	H. Chen; J. B. Kuo; M. Syrzycki; JAMES-B KUO
臺大學術典藏	2018-09-10T06:35:00Z	Low-Voltage Single-Phase Clocking Adiabatic DCVS Logic Circuit with Pass Gate Logic	E. K. Loo; J. B. Kuo; M. Syrzycki; JAMES-B KUO
臺大學術典藏	2018-09-10T06:35:00Z	Modeling the Gate Tunneling Current Effects of Sub-100nm NMOS Devices with an Ultra-thin (1nm) Gate Oxide	J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T06:35:00Z	STI Mechanical Stress Induced Subthreshold Kink Effect of 40nm PD SOI NMOS Devices	J. B. kuo; M. Ma; C. T. Tsai; C. S. Yeh; D. Chen; JAMES-B KUO; I. Lin; V. Su
臺大學術典藏	2018-09-10T06:34:59Z	Narrow Band Gap Semiconductor	H. H. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T06:34:59Z	Triple-Threshold Static Power Minimization Technique in High-Level Synthesis for Designing High-Speed Low-Power SOC Applications Using 90nm MTCMOS Technology	H. I. Chen;E. K. Loo;J. B. Kuo;M. J. Syrzycki; H. I. Chen; E. K. Loo; J. B. Kuo; M. J. Syrzycki; JAMES-B KUO
臺大學術典藏	2018-09-10T06:34:59Z	Triple-Threshold Static Power Minimization Technique in High-Level Synthesis for Designing High-Speed Low-Power SOC Applications Using 90nm MTCMOS Technology	H. I. Chen;E. K. Loo;J. B. Kuo;M. J. Syrzycki; H. I. Chen; E. K. Loo; J. B. Kuo; M. J. Syrzycki; JAMES-B KUO
臺大學術典藏	2018-09-10T06:02:16Z	Gate-Level Dual-Threshold Static Power Optimization Methodology (GDSPOM) Using Path-Based Static Timing Analysis (STA) Technique	B. Chung; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T06:02:16Z	Analysis of Fringing Electric Field Related Capacitance Behavior of Narrow-Channel FD SOI NMOS Devices Using 3D Simulation	C. C. Chen; J. B. Kuo; K. W. Su; S. Liu; JAMES-B KUO
臺大學術典藏	2018-09-10T06:02:15Z	Partitioned gate tunnelling current model considering distributed effect for CMOS devices with ultra-thin (1 nm) gate oxide	C. H. Lin; J. B. KUO; K. W. Su; S. Liu; JAMES-B KUO
臺大學術典藏	2018-09-10T06:02:15Z	Gate capacitances behavior of nanometer FD SOI CMOS devices with HfO2 high-k gate dielectric considering vertical and fringing displacement effects using 2-D simulation	Y. S. Lin; C. H. Lin; J. B. Kuo; K. W. Su; JAMES-B KUO
臺大學術典藏	2018-09-10T06:02:15Z	Analysis of the gate-source/drain capacitance behavior of a narrow-channel FD SOINMOS device considering the 3-D fringing capacitances using 3-D simulation	C. C. Chen; J. B. Kuo; K. W. Su,; S. Liu; JAMES-B KUO
臺大學術典藏	2018-09-10T06:02:15Z	Gate-Level Dual-Threshold Static Power Optimization Methodology (GDSPOM) for Designing High-Speed Low-Power SOC Applications Using 90nm MTCMOS Technology	B. Chung; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T06:02:15Z	Fringing Effects of Nanometer SOI CMOS Devices	J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T05:26:48Z	Fringing-Induced Narrow-Channel-Effect (FINCE) RElated Capacitance Behavior of Nanometer FD SOI NMOS Devices Using Mesa-Isolation Via 3D Simulation	G. S. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T05:26:48Z	CGS Capacitance Phenomenon of 100nm FD SOI CMOS Devices with HfO2 High-k Gate Dielectric Considering Vertical and Fringing Displacement Effects	Y. S. Lin; C. H. Lin; J. B. Kuo; K. W. Su; JAMES-B KUO
臺大學術典藏	2018-09-10T04:59:04Z	Gate Misalignment Effect Related Capacitance Behavior of a 100nm DG FD SOI NMOS Device with n+/p+ Poly Top/Bottom Gate	C. H. Hsu; C. P. Yang; JAMES-B KUO; J. B. Kuo
臺大學術典藏	2018-09-10T04:59:04Z	Low-Voltage SOI CMOS VLSI Devices and Circuits	J. B. Kuo; S. C. Lin; JAMES-B KUO
臺大學術典藏	2018-09-10T04:59:03Z	A Compact Threshold Voltage Model for Gate Misalignment Effect of DG FD SOI NMOS Devices Considering Fringing Electric Field Effects	E. C. Sun; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T04:59:03Z	PD SOI-Technology SPICE Models	J. B. Kuo; S. C. Lin; JAMES-B KUO
臺大學術典藏	2018-09-10T04:59:03Z	A Low-Voltage CMOS Load Driver with the Adiabatic and Bootstrap Techniques for Low-Power System Applications	J. B. Kuo;H. P. Chen; J. B. Kuo; H. P. Chen; JAMES-B KUO
臺大學術典藏	2018-09-10T04:59:03Z	A Low-Voltage CMOS Load Driver with the Adiabatic and Bootstrap Techniques for Low-Power System Applications	J. B. Kuo;H. P. Chen; J. B. Kuo; H. P. Chen; JAMES-B KUO
臺大學術典藏	2018-09-10T04:59:03Z	Trends on CMOS VLSI	J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T04:35:19Z	Compact Modeling of SOI CMOS VLSI Devices	J. .B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T04:35:19Z	Asymmetric Gate Misalignment Effect on Subthreshold Characteristics DG SOI NMOS Devices Considering Fringing Electric Field Effect	M. T. Lin; E. C. Sun; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T04:35:18Z	Ultra-low-voltage SOI CMOS Inverting Driver Circuit Using Effective Charge Pump Based on Bootstrap Technique	JAMES-B KUO; J. B. Kuo; J. H. T. Chen
臺大學術典藏	2018-09-10T04:35:18Z	Modeling the Fringing Electric Field Effect on the Threshold Voltage of FD SOI NMOS Devices with the LDD/Sidewall Oxide Spacer Structure	S. C. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T04:35:18Z	SOI CMOS VLSI	J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T04:35:18Z	Novel Sub-1V CMOS Domino Dynamic Logic Circuit Using a Direct Bootstrap (DB) Technique for Low-voltage CMOS VLSI	P. C. Chen; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T04:35:18Z	A Novel 0.8V BP-DTMOS Content Addressable Memory Cell Circuit Derived from SOI-DTMOS Techniques	E. Shen; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T04:35:18Z	Analysis of Gate Misalignment Effect on the Threshold Voltage of Double-Gate (DG) Ultrathin FD SOI NMOS Devices Using a Compact Model Considering Fringing Electric Field Effect	J. B. Kuo; E. C. Sun; M. T. Lin; JAMES-B KUO
臺大學術典藏	2018-09-10T04:15:06Z	The Fringing Electric Field Effect on the Short-Channel Effect Threshold Voltage of FD SOI NMOS Devices with LDD/Sidewall Oxide Spacer Structure	J. B. Kuo; S. C. Lin; JAMES-B KUO
臺大學術典藏	2018-09-10T04:15:06Z	Fringing-Induced Barrier Lowering (FIBL) Effects of 100nm FD SOI NMOS Devices with High Permittivity Gate Dielectrics and LDD/Sidewall Oxide Spacer	S. C. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T04:15:06Z	Compact Breakdown Model for PD SOI NMOS Devices Considering BJT/MOS Impact Ionization for SPICE Circuits Simulation	J. B. Kuo; S. C. Lin; JAMES-B KUO
臺大學術典藏	2018-09-10T04:15:06Z	High-Temperature Quasi-Saturation Model of High-Voltage DMOS Power Devices	C. L. Yang; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T04:15:05Z	Sub-1V CMOS Large Capacitive-Load Driver Circuit Using Direct Bootstrap Technique for Low-Voltage CMOS VLSI	P. C. Chen; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T04:15:05Z	A 0.8-V 128-Kb Four-Way Set-Associative Two-Level CMOS Cache Memory Using Two-Stage Wordline/Bitline-Oriented Tag-Compare (WLOTC/BLOTC) Scheme	P. F. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T03:50:15Z	Novel 0.8V True-Single-Phase-Clocking (TSPC) Latches Using PD-SOI DTMOS Techniques for Low-Voltage CMOS VLSI Circuits	J. B. Kuo; T. Y. Chiang; JAMES-B KUO

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