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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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機構 日期 題名 作者
臺大學術典藏 2018-09-10T04:59:03Z A Compact Threshold Voltage Model for Gate Misalignment Effect of DG FD SOI NMOS Devices Considering Fringing Electric Field Effects E. C. Sun; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T04:59:03Z PD SOI-Technology SPICE Models J. B. Kuo; S. C. Lin; JAMES-B KUO
臺大學術典藏 2018-09-10T04:59:03Z A Low-Voltage CMOS Load Driver with the Adiabatic and Bootstrap Techniques for Low-Power System Applications J. B. Kuo;H. P. Chen; J. B. Kuo; H. P. Chen; JAMES-B KUO
臺大學術典藏 2018-09-10T04:59:03Z A Low-Voltage CMOS Load Driver with the Adiabatic and Bootstrap Techniques for Low-Power System Applications J. B. Kuo;H. P. Chen; J. B. Kuo; H. P. Chen; JAMES-B KUO
臺大學術典藏 2018-09-10T04:59:03Z Trends on CMOS VLSI J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T04:35:19Z Compact Modeling of SOI CMOS VLSI Devices J. .B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T04:35:19Z Asymmetric Gate Misalignment Effect on Subthreshold Characteristics DG SOI NMOS Devices Considering Fringing Electric Field Effect M. T. Lin; E. C. Sun; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T04:35:18Z Ultra-low-voltage SOI CMOS Inverting Driver Circuit Using Effective Charge Pump Based on Bootstrap Technique JAMES-B KUO; J. B. Kuo; J. H. T. Chen
臺大學術典藏 2018-09-10T04:35:18Z Modeling the Fringing Electric Field Effect on the Threshold Voltage of FD SOI NMOS Devices with the LDD/Sidewall Oxide Spacer Structure S. C. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T04:35:18Z SOI CMOS VLSI J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T04:35:18Z Novel Sub-1V CMOS Domino Dynamic Logic Circuit Using a Direct Bootstrap (DB) Technique for Low-voltage CMOS VLSI P. C. Chen; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T04:35:18Z A Novel 0.8V BP-DTMOS Content Addressable Memory Cell Circuit Derived from SOI-DTMOS Techniques E. Shen; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T04:35:18Z Analysis of Gate Misalignment Effect on the Threshold Voltage of Double-Gate (DG) Ultrathin FD SOI NMOS Devices Using a Compact Model Considering Fringing Electric Field Effect J. B. Kuo; E. C. Sun; M. T. Lin; JAMES-B KUO
臺大學術典藏 2018-09-10T04:15:06Z The Fringing Electric Field Effect on the Short-Channel Effect Threshold Voltage of FD SOI NMOS Devices with LDD/Sidewall Oxide Spacer Structure J. B. Kuo; S. C. Lin; JAMES-B KUO
臺大學術典藏 2018-09-10T04:15:06Z Fringing-Induced Barrier Lowering (FIBL) Effects of 100nm FD SOI NMOS Devices with High Permittivity Gate Dielectrics and LDD/Sidewall Oxide Spacer S. C. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T04:15:06Z Compact Breakdown Model for PD SOI NMOS Devices Considering BJT/MOS Impact Ionization for SPICE Circuits Simulation J. B. Kuo; S. C. Lin; JAMES-B KUO
臺大學術典藏 2018-09-10T04:15:06Z High-Temperature Quasi-Saturation Model of High-Voltage DMOS Power Devices C. L. Yang; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T04:15:05Z Sub-1V CMOS Large Capacitive-Load Driver Circuit Using Direct Bootstrap Technique for Low-Voltage CMOS VLSI P. C. Chen; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T04:15:05Z A 0.8-V 128-Kb Four-Way Set-Associative Two-Level CMOS Cache Memory Using Two-Stage Wordline/Bitline-Oriented Tag-Compare (WLOTC/BLOTC) Scheme P. F. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T03:50:15Z Novel 0.8V True-Single-Phase-Clocking (TSPC) Latches Using PD-SOI DTMOS Techniques for Low-Voltage CMOS VLSI Circuits J. B. Kuo; T. Y. Chiang; JAMES-B KUO
臺大學術典藏 2018-09-10T03:50:15Z Low-Voltage SOI CMOS VLSI Devices and Circuits J. B. Kuo; S. C. Lin; JAMES-B KUO
臺大學術典藏 2018-09-10T03:50:14Z A 1-V 128-kb four-way set-associative CMOS cache memory using wordline-oriented tag-compare (WLOTC) structure with the content-addressable-memory (CAM) 10-transistor tag cell P. F. Lin; J. B. Kuo; P. F. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T03:50:14Z A 1-V 128-kb four-way set-associative CMOS cache memory using wordline-oriented tag-compare (WLOTC) structure with the content-addressable-memory (CAM) 10-transistor tag cell P. F. Lin; J. B. Kuo; P. F. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T03:50:14Z A novel low-voltage content-addressable-memory (CAM) cell with a fast tag-compare capability using partially depleted (PD) SOI CMOS dynamic-threshold (DTMOS) techniques S. C. Liu; J. B. Kuo; Frank Wu; JAMES-B KUO
臺大學術典藏 2018-09-10T03:50:14Z Modeling of Single-Transistor Latch Behavior in Partially-Depleted (PD) SOI CMOS Devices Using a Concise SOI-SPICE Model J. B. Kuo; S. C. Lin; JAMES-B KUO

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