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機構	日期	題名	作者
臺大學術典藏	2018-09-10T09:24:49Z	Compact Modeling of SOI CMOS Devices	J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:49Z	Compact Modeling of SOI CMOS Devices	J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:49Z	Grain-Boundary Impact Ionization-Induced Current Hump Effects of Polysilicon TFTs	S. Zhang; JAMES-B KUO; J. B. Kuo; T. C. Liu;J. B. Kuo;S. Zhang; T. C. Liu
臺大學術典藏	2018-09-10T09:24:49Z	Grain-Boundary Impact Ionization-Induced Current Hump Effects of Polysilicon TFTs	S. Zhang; JAMES-B KUO; J. B. Kuo; T. C. Liu;J. B. Kuo;S. Zhang; T. C. Liu
臺大學術典藏	2018-09-10T09:24:49Z	Grain Boundary-Related Kink Effects of Poly-Si TFTs	T. C. Liu;J. B. Kuo; T. C. Liu; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:49Z	Grain Boundary-Related Kink Effects of Poly-Si TFTs	T. C. Liu;J. B. Kuo; T. C. Liu; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:49Z	Modeling Hot-Carrier-Induced Reliability of Poly-silicon Thin Film Transistors	L. L. Wang;J. B. Kuo;S. Zhang; L. L. Wang; J. B. Kuo; S. Zhang; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:49Z	Modeling Hot-Carrier-Induced Reliability of Poly-silicon Thin Film Transistors	L. L. Wang;J. B. Kuo;S. Zhang; L. L. Wang; J. B. Kuo; S. Zhang; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:48Z	Foating-Body Kink-Effect Related Parasitic Bipolar Transistor Behavior in Poly-Si TFT	T. C. Liu;J. B. Kuo;S. D. Zhang; T. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:48Z	Foating-Body Kink-Effect Related Parasitic Bipolar Transistor Behavior in Poly-Si TFT	T. C. Liu;J. B. Kuo;S. D. Zhang; T. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:48Z	Turn-off Transient Behavior of 40nm PD SOI NMOS Device Considering the Floating Body Effect	S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:48Z	Floating-Body Kink Effect: Ply-Si TFT versus SOI CMOS	T. C. Liu;J. B. Kuo;S. D. Zhang; T. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:48Z	Floating-Body Kink Effect: Ply-Si TFT versus SOI CMOS	T. C. Liu;J. B. Kuo;S. D. Zhang; T. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:48Z	Design of Distortionless Interconnects via Main/auxiliary Structure with LC Line for High Speed On-chip Transmission	T. C. Liu;J. B. Kuo;S. D. Zhang; T. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:48Z	Design of Distortionless Interconnects via Main/auxiliary Structure with LC Line for High Speed On-chip Transmission	T. C. Liu;J. B. Kuo;S. D. Zhang; T. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO
臺大學術典藏	2018-09-10T08:46:16Z	Modeling the Floating-Body-Effect-Related Transient Behavior of 40nm PD SOI NMOS Device via the SPICE Bipolar/MOS Model	S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:46:16Z	A Novel Low-Voltage Silicon-On-Insulator (SOI) CMOS Complementary Pass-Transistor Logic (CPL) Circuit using Asymmetrical Dynamic Threshold Pass-Transistor (ADTPT) Technique	J. B. Kuo;B. T. Wang; J. B. Kuo; B. T. Wang; JAMES-B KUO
臺大學術典藏	2018-09-10T08:46:16Z	A Novel Low-Voltage Silicon-On-Insulator (SOI) CMOS Complementary Pass-Transistor Logic (CPL) Circuit using Asymmetrical Dynamic Threshold Pass-Transistor (ADTPT) Technique	J. B. Kuo;B. T. Wang; J. B. Kuo; B. T. Wang; JAMES-B KUO
臺大學術典藏	2018-09-10T08:46:16Z	A Charge-Sharing-Problem-Free 1.5V BiCMOS Dynamic Logic Gate Circuit	J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T08:46:16Z	A Charge-Sharing-Problem-Free 1.5V BiCMOS Dynamic Logic Gate Circuit	J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T08:46:15Z	Analysis of Turn-off Transient Behavior of the 40nm PD SOI NMOS Device with the Floating Body Effect	C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect	H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect	H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Modeling the Floating-Body-Effect-Induced Drain Current Behavior of 40nm PD SOI NMOS Device Via SPICE BJT/MOS Model Approach	J. S. Su;J. B. Kuo;D. Chen;C. S. Yeh; J. S. Su; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Modeling the Floating-Body-Effect-Induced Drain Current Behavior of 40nm PD SOI NMOS Device Via SPICE BJT/MOS Model Approach	J. S. Su;J. B. Kuo;D. Chen;C. S. Yeh; J. S. Su; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO

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