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Institution Date Title Author
國立中山大學 1997 Novel Ga2O3(Gd2O3) Passivation Techniques to Produce Low Dit Oxide-GaAs Interfaces M. Hong;J.P. Mannaerts;J.E. Bowers;J. Kwo;M. Passlack;W.Y. Hwang;L.W. Tu
國立中山大學 1993-06 High-Speed 1.3 mm InGaAsP Fabry-Perot Lasers for Digital and Analog Applications W.H. Cheng; A. Mar; J.E. Bowers; R.T. Huang; C.B. Su
國立中山大學 1992-04 High-Speed Low-Threshold InGaAsP Semi-Insulating Buried Crescent Lasers with 22 GHz Bandwidth R.T. Huang; D. Wolf; W.H. Cheng;C.L. Jiang; R. Agarwal; A. Mar; J.E. Bowers
國立中山大學 1991-06 High-Speed and Low-Relative-Intensity Noise 1.3 mm InGaAsP Semi-Insulating Buried Crescent Lasers W.H. Cheng; K.D. Buehring; A. Appelbaum;D. Renner; S. Shin; C.B. Su; A. Mar; J.E. Bowers

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