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Institution Date Title Author
國立高雄師範大學 2008-09 Effect of Strain-Temperature Stress on MOS Structure with Ultra-thin Gate Oxide C.N. Lin;Y.L. Yang;W.T. Chen;S.C. Lin;K.C. Chuang;J.G. Hwu; 楊宜霖
國立臺灣大學 2008-03 Study of Ultra-thin Gate Oxides Prepared by Tensile-Stress Oxidation in Tilted Cathode Anodization System C.C.Wang, T.H.Li, K.C.Chuang; J.G.Hwu*
國立高雄師範大學 2007-12 Investigation of Strain-Temperature Stress Effects on the Characteristics of MOS Capacitors with Ultra-thin Gate Oxides C.N. Lin;Y.L. Yang;W.T. Chen;S.C. Lin;J.G. Hwu; 楊宜霖
國立高雄師範大學 2007-06 Modeling and Characterization of Hydrogen Induced Charge Loss in Nitride Trapping Memory Y.L. Yang;C.H. Chang;Y.H. Shih;K.Y. Hsieh;J.G. Hwu; 楊宜霖
國立高雄師範大學 2006-12 Hydrogen Eraser for Tightening VT Distribution of Nitride Trapping Memory Y.L. Yang;C.H. Chang;Y.H. Shih;K.Y. Hsieh;J.G. Hwu; 楊宜霖
國立高雄師範大學 2004-10 Quality Improvement of Ultra-Thin Gate Oxide by Using Thermal-Growth Followed by Scanning-Frequency Anodization (SF ANO) Technique Y.L. Yang;J.G. Hwu; 楊宜霖
國立高雄師範大學 2004-09 Growth-Then-Anodization Technique for Reliable Ultra-Thin Gate Oxides W.J. Liao;Y.L. Yang;S.C. Chuang;J.G. Hwu; 楊宜霖

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