English  |  正體中文  |  简体中文  |  Total items :2875273  
Visitors :  54514385    Online Users :  1555
Project Commissioned by the Ministry of Education
Project Executed by National Taiwan University Library
 
臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
About TAIR

Browse By

News

Copyright

Related Links

"j k sheu"

Return to Browse by Author
Sorting by Title Sort by Date

Showing items 21-30 of 60  (6 Page(s) Totally)
<< < 1 2 3 4 5 6 > >>
View [10|25|50] records per page

Institution Date Title Author
南台科技大學 2006 Effects of Thermal Annealing on Al-Doped ZnO Films Deposited on p-Type Gallium Nitride 李明倫; C. J. Tun; J. K. Sheu; M. L. Lee; C. C. Hu; C. K. Hsieh; G. C. Chi
南台科技大學 2006 Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN 李明倫; J. K. Sheu; M. L. Lee; C. J. Tun; S.W. Lin
南台科技大學 2006 Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer 李明倫; M. L. Lee; J. K. Sheu; S. W. Lin
南台科技大學 2006 Improved Performance of Planar GaN-based p-i-n Photodetectors with Mg-implanted Isolation Ring 李明倫; M. C. Chen; J. K. Sheu; M. L. Lee; C. J. Tun; G. C. Chi
南台科技大學 2006 Effects of thermal annealing on transparent gallium-doped zinc oxide films prepared by sputtering system 李明倫; K. H. Chang; K. W. Hsu; H. H. Chen; M. L. Lee; J. K. Sheu
南台科技大學 2006 Ultraviolet band-pass GaN/AZO Schottky barrier photodetectors 李明倫; M. L. Lee; P. F. Chi; S. J. Tu; H. H. Chen; J. K. Sheu
南台科技大學 2006 Inverted GaN P-I-N Photodiodes with a buried tunneling junction 李明倫; M. L. Lee; J. K. Sheu; W.C.Lai; S.C.Shei; S.J.Chang
南台科技大學 2005 Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metal-organic vapor-phase 李明倫; J. K. Sheu; S. S. Chen; M. L. Lee; W. C. Lai; W. H. Chang; G. C. Chi
南台科技大學 2005 Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors 李明倫; C. J. Kao; M. C. Chen; C.J. Tun; G. C. Chi; J. K. Sheu; W. C. Lai; M. L. Lee; F.Ren; S.J.Pearton
南台科技大學 2005 Rectifying characteristics of WSi0.8--GaN Schottky barrier diodes with a GaN cap layer grown at low temperature 李明倫; J. K. Sheu; M. L. Lee; H. C. Tseng; W. C. Lai; G. C. Chi

Showing items 21-30 of 60  (6 Page(s) Totally)
<< < 1 2 3 4 5 6 > >>
View [10|25|50] records per page