| 臺大學術典藏 |
2022-03-22T08:30:48Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm
|
Wang C.-I;Chen H.-Y;Wang C.-Y;Chang T.-J;Jiang Y.-S;Chang C.-S;Chen M.-J.; Wang C.-I; Chen H.-Y; Wang C.-Y; Chang T.-J; Jiang Y.-S; Chang C.-S; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:45Z |
Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography
|
Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:44Z |
Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm
|
Wang C.-I;Chen H.-Y;Wang C.-Y;Chang T.-J;Jiang Y.-S;Chang C.-S;Chen M.-J.; Wang C.-I; Chen H.-Y; Wang C.-Y; Chang T.-J; Jiang Y.-S; Chang C.-S; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:43Z |
Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography
|
Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:38Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2022-03-22T08:30:36Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2022-03-22T08:27:46Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:44Z |
Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm
|
Wang C.-I;Chen H.-Y;Wang C.-Y;Chang T.-J;Jiang Y.-S;Chang C.-S;Chen M.-J.; Wang C.-I; Chen H.-Y; Wang C.-Y; Chang T.-J; Jiang Y.-S; Chang C.-S; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:43Z |
Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography
|
Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:37Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2021-09-02T00:03:42Z |
Operation bandwidth of negative capacitance characterized by the frequency response of capacitance magnification in ferroelectric/dielectric stacks
|
Jiang Y.-S;Jeng Y.-E;Yin Y.-T;Huang K.-W;Chang T.-J;Wang C.-I;Chao Y.-T;Wu C.-H;Chen M.-J.; Jiang Y.-S; Jeng Y.-E; Yin Y.-T; Huang K.-W; Chang T.-J; Wang C.-I; Chao Y.-T; Wu C.-H; Chen M.-J.; CHAO-HSIN WU |
| 臺大學術典藏 |
2021-08-05T02:41:05Z |
Sub-7-nm textured ZrO2 with giant ferroelectricity
|
Huang K.-W;Yi S.-H;Jiang Y.-S;Kao W.-C;Yin Y.-T;Beck D;Korolkov V;Proksch R;Shieh J;Chen M.-J.; Huang K.-W; Yi S.-H; Jiang Y.-S; Kao W.-C; Yin Y.-T; Beck D; Korolkov V; Proksch R; Shieh J; Chen M.-J.; TZONG-LIN JAY SHIEH |
| 臺大學術典藏 |
2021-08-05T02:41:02Z |
Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
|
Wang C.-I;Chang T.-J;Yin Y.-T;Jiang Y.-S;Shyue J.-J;Chen M.-J.; Wang C.-I; Chang T.-J; Yin Y.-T; Jiang Y.-S; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-08-05T02:41:01Z |
Operation bandwidth of negative capacitance characterized by the frequency response of capacitance magnification in ferroelectric/dielectric stacks
|
Jiang Y.-S;Jeng Y.-E;Yin Y.-T;Huang K.-W;Chang T.-J;Wang C.-I;Chao Y.-T;Wu C.-H;Chen M.-J.; Jiang Y.-S; Jeng Y.-E; Yin Y.-T; Huang K.-W; Chang T.-J; Wang C.-I; Chao Y.-T; Wu C.-H; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-08-05T02:41:00Z |
Sub-7-nm textured ZrO2 with giant ferroelectricity
|
Huang K.-W;Yi S.-H;Jiang Y.-S;Kao W.-C;Yin Y.-T;Beck D;Korolkov V;Proksch R;Shieh J;Chen M.-J.; Huang K.-W; Yi S.-H; Jiang Y.-S; Kao W.-C; Yin Y.-T; Beck D; Korolkov V; Proksch R; Shieh J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2020-06-04T07:54:06Z |
W -band flip-chip assembled CMOS amplifier with transition compensation network for SiP integration
|
Kuo, C.-C.;Lin, P.-A.;Lu, H.-C.;Jiang, Y.-S.;Liu, C.-M.;Hsin, Y.-M.;Wang, H.; Kuo, C.-C.; Lin, P.-A.; Lu, H.-C.; Jiang, Y.-S.; Liu, C.-M.; Hsin, Y.-M.; Wang, H.; HUEI WANG |
| 臺大學術典藏 |
2020-02-10T07:38:10Z |
Patent analysis for supporting merger and acquisition (M&A) prediction: A data mining approach
|
Wei C.-P;Jiang Y.-S;Yang C.-S.; Wei C.-P; Jiang Y.-S; Yang C.-S.; CHIH-PING WEI |
| 臺大學術典藏 |
2018-09-10T09:18:00Z |
Flip-chip-assembled W-band CMOS chip modules on ceramic integrated passive device with transition compensation for millimeter-wave system-in-package integration
|
Lu, H.-C.; Kuo, C.-C.; Lin, P.-A.; Tai, C.-F.; Chang, Y.-L.; Jiang, Y.-S.; Tsai, J.-H.; Hsin, Y.-M.; Wang, H.; HSIN-CHIA LU |
| 臺大學術典藏 |
2018-09-10T08:09:34Z |
W -band flip-chip assembled CMOS amplifier with transition compensation network for SiP integration
|
Kuo, C.-C.;Lin, P.-A.;Lu, H.-C.;Jiang, Y.-S.;Liu, C.-M.;Hsin, Y.-M.;Wang, H.; Kuo, C.-C.; Lin, P.-A.; Lu, H.-C.; Jiang, Y.-S.; Liu, C.-M.; Hsin, Y.-M.; Wang, H.; HSIN-CHIA LU |
| 臺大學術典藏 |
2018-09-10T06:29:48Z |
Analysis and design of bandpass single-pole-double-throw FET filter-integrated switches
|
Tsai, Z.-M.; Jiang, Y.-S.; Lee, J.; Lin, K.-Y.; Wang, H.; KUN-YOU LIN |
| 國立臺灣科技大學 |
2015 |
Task scheduling for grid computing systems using a genetic algorithm
|
Jiang, Y.-S.;Chen, W.-M. |
| 國立臺灣科技大學 |
2014 |
Task scheduling in grid computing environments
|
Jiang, Y.-S.;Chen, W.-M. |
| 國立臺灣科技大學 |
2010 |
Scheduling for ordered query services in multi-channel data broadcast systems
|
Lin Y.-H.; Jiang Y.-S.; Chen W.-M. |
