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"jung hui tsai"

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Showing items 161-210 of 294  (6 Page(s) Totally)
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Institution Date Title Author
國立高雄師範大學 2006 Performance improvement of an InGaP/GaAs heterojunction bipolar transistor (HBT) with surface sulfur treatments Jung-Hui Tsai;Ssu-I Fu;Po-Hsien Lai;Yan-Ying Tsai;Ching-Wen Hung;Wen-Chau Liu; 蔡榮輝
國立臺灣海洋大學 2006 Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT) Chun-Wei Chen;Po-Hsien Lai;Wen-Shiung Lour;Der-Feng Guo;Jung-Hui Tsai;Wen-Chau Liu
國立臺灣海洋大學 2006 Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor Tzu-Pin Chen;Ssu-I Fu;Jung-Hui Tsai;Wen-Shiung Lour;Der-Feng Guo;Shiou-Ying Cheng;Wen-Chau Liu
國立高雄師範大學 2005-08 多功能磷化銦/砷化銦鎵異質接面雙極性電晶體之研究 蔡榮輝; Jung-Hui Tsai
國立高雄師範大學 2005 A Novel GaAs field-effect transistor with double camel-like gate structure Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2005 High-performance InP/InGaAs pnp d-doped heterojunction bipolar transistor Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學 2005 Influence of d-doped sheet on DC performances of InP/InGaAs heterojunction bipolar transistors Jung-Hui Tsai;Yu-Jui Chu;Jeng-Shyan Chen;King-Poul Z; 蔡榮輝
國立高雄師範大學 2005 Influence of spacer layer on InP/InGaAs d-doped heterojunction bipolar transistors Jung-Hui Tsai;Yu-Jui Chu; 蔡榮輝
國立高雄師範大學 2005 Multiple negative-differential-resistance switches based on an InGaP/GaAs/InGaAs step-compositional-emitter bipolar transistor for multiple-valued logic application Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學 2005 Application of InGaP/GaAs/InGaAs step-compositional-emitter structures for multiple-route switch Jung-Hui Tsai;Ying-Cheng Chu;Shao-Yen Chiu;King-Poul Zhu;Yu-Jui Chu;Jeng-Shyan Chen; 蔡榮輝
國立高雄師範大學 2005 Design consideration of δ-doping channels for high-performance n+-GaAs/p+-InGaP/n-GaAs camel-gate field effect transistors Jung-Hui Tsai;Jeng-Shyan Chen;Yu-Jui Chu; 蔡榮輝
國立高雄師範大學 2005 High-performance InP/InGaAs pnp heterostructure-emitter bipolar transistor Jung-Hui Tsai;Yu-Chi Kang;I-Hsuan Hsu;Tzu-Yen Weng; 蔡榮輝
國立高雄師範大學 2005 Hydrogen sensing responses of a Pt-InAlP metal-oxide-semiconductor (MOS) diode Jung-Hui Tsai;Yan-Ying Tsai;Hon-Rung;Wei-His Hsu;Po-Hsien La;Ssu-I Fu;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2005 Extremely high gate turn-on voltage of GaAs double camel-like gate field-effect transistor Jung-Hui Tsai;Yu-Chi Kang; 蔡榮輝
國立高雄師範大學 2005 InP/InGaAs resonant tunneling diode with six-route negative differential resistances Jung-Hui Tsai;Yu-Chi Kang;Wen-Shiung Lour; 蔡榮輝
國立臺灣海洋大學 2005 Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu
國立高雄師範大學 2004-08 極高線性度磷化銦鎵/砷化銦鎵/砷化鎵駝峰式閘極擬晶性高電子遷移率電晶體之研究(II) 蔡榮輝; Jung-Hui Tsai
國立高雄師範大學 2004 A functional InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學 2004 High performances of InGaP/InGaAs/GaAs pseudomorphic modulation-doped field effect transistors using camel-gate structure Jung-Hui Tsai;King-Poul Zhu;Shao-Yen Chiu;Ying-Cheng Chu; 蔡榮輝
國立高雄師範大學 2004 High-performance AlInAs/GaInAs d-doped HEMT with negative differential resistance switch for logic application Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2004 Investigation of InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches Jung-Hui Tsai;Yu-Jui Chu;Jeng-Shyan Chen;King-Poul Zhu; 蔡榮輝
國立高雄師範大學 2004 Investigation of InP/InGaAs pnp δ-doped heterojunction bipolar transistor Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學 2004 On the multiple-state switches of an InGaP/GaAs double heterostructure-emitter bipolar transistor Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Ch; 蔡榮輝
國立高雄師範大學 2004 High gate turn-on voltages of InGaP/InGaAs camel-gate n- and p-channel pseudomorphic modulation-doped field effect transistors prepared by low-pressure MOCVD Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學 2004 Investigation of InP/InGaAs heterostructure confinement bipolar transistors grown by low-pressure MOCVD Jung-Hui Tsai;Ying-Cheng Chu;King-Poul Zhu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學 2004 On the negative differential resistance of AlInAs/GaInAs delta-doped HEMT for logic application Jung-Hui Tsai;King-Poul Zhu;Shih-Wei Tan;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學 2004 A new S-shaped switch based on an InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor Jung-Hui Tsai;Shao-Yen Chiu;Ying-Cheng Chu;King-Poul Zhu; 蔡榮輝
國立高雄師範大學 2004 Device linearity enhancement of InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic high electron mobility transistor Jung-Hui Tsai;Shao-Yen Chiu;Ying-Cheng Chu;King-Poul Zhu; 蔡榮輝
國立高雄師範大學 2003-08 極高線性度磷化銦鎵/砷化銦鎵/砷化鎵駝峰式閘極擬晶性高電子遷移率電晶體之研究(I) 蔡榮輝; Jung-Hui Tsai
國立高雄師範大學 2003 /InGaAs/GaAs camel-gate p-channel pseudomorphic modulation-doped field effect transistor Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學 2003 Electrical Properties of single delta-doped InGaP/InGaAs/GaAs pseudomorphic HEMT with camel-like gate structure Jung-Hui Tsai;King-Poul Zhu; 蔡榮輝
國立高雄師範大學 2003 High performances of InP/InGaAs heterojunction bipolar transistors with a d-doped sheet between two spacer layers Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2003 Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2003 A novel InGaP/InGaAs/GaAs double d-doped pHEMT with camel-like gate structure Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2003 Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor at room temperature Jung-Hui Tsai;King-Poul Zhu; 蔡榮輝
國立高雄師範大學 2003 Investigation of InP/InGaAs superlattice-emitter heterojunction bipolar transistor (HBT) Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學 2003 Multiple negative differential resistance of superlattice-emitter resonant tunneling bipolar transistor by high-field domain Jung-Hui Tsai;Ying-Cheng Chu;Shao-Yen Chiu;King-Poul Zhu; 蔡榮輝
國立高雄師範大學 2003 InP/GaInAs d-doped heterojunction bipolar transistors with high current gain, low offset voltage Jung-Hui Tsai;Yu-Jui Chu;Jeng-Shyan Chen; 蔡榮輝
國立高雄師範大學 2003 A modeling approach to high-performance InGaP/GaAs camel-gate δ-doping field effect transistors Jung-Hui Tsai;Jeng-Shyan Chen;Yu-Jui Chu; 蔡榮輝
國立高雄師範大學 2003 High-performance InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor Jung-Hui Tsai;King-Poul Zhu; 蔡榮輝
國立高雄師範大學 2002-08 新式磷化銦/砷化銦鎵異質接面雙極性電晶體之研究及應用 蔡榮輝; Jung-Hui Tsai
國立高雄師範大學 2002-01 Characteristics of InGaP/GaAs co-Integrated d-doped heterojunction bipolar transistor and doped-channel field effect transistor Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2002 電子學 何明宗;蔡榮輝;李孟恩; Ming-Chung Ho;Meng-En Lee;Jung-Hui Tsai
國立高雄師範大學 2002 InGaP/GaAs camel-gate field effect transistor with double d-doping channel profiles Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2002 High-Breakdown Voltage Heterostructure Fields-Effect Transistor for High Temperature Operations Jung-Hui Tsai;Jung-Hui Tsai;Wen-Lung Chang;Kuo-Hui Yu;Kun-Wei Lin; 蔡榮輝
國立高雄師範大學 2002 InGaP/InGaAs/GaAs single d-doped pseudomorphic high electron mobility transistor with high barrier camel gate Jung-Hui Tsai;Ming-Jui Lin;King-Poul Ge; 蔡榮輝
國立高雄師範大學 2002 A New InP/InGaAs d-doped heterojunction bipolar transistor Jung-Hui Tsai;King-Poul Ge;Ming-Jui Lin; 蔡榮輝
國立高雄師範大學 2002 Performance of InGaP/InGaAs/GaAs camel-gate single d-doping pHEMT Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2002 Integrated fabrication of InGaP/GaAs d-doped Heterojunction bipolar transistor and doped-channel field effect transistor Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2002 High-Linearity InGaP/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) with Camel-Gate Structure Jung-Hui Tsai;Jeng-Shyan Chen; 蔡榮輝

Showing items 161-210 of 294  (6 Page(s) Totally)
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