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"jung hui tsai"

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Institution	Date	Title	Author
國立高雄師範大學	2002-08	新式磷化銦/砷化銦鎵異質接面雙極性電晶體之研究及應用	蔡榮輝; Jung-Hui Tsai
國立高雄師範大學	2002-01	Characteristics of InGaP/GaAs co-Integrated d-doped heterojunction bipolar transistor and doped-channel field effect transistor	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2002	電子學	何明宗;蔡榮輝;李孟恩; Ming-Chung Ho;Meng-En Lee;Jung-Hui Tsai
國立高雄師範大學	2002	InGaP/GaAs camel-gate field effect transistor with double d-doping channel profiles	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2002	High-Breakdown Voltage Heterostructure Fields-Effect Transistor for High Temperature Operations	Jung-Hui Tsai;Jung-Hui Tsai;Wen-Lung Chang;Kuo-Hui Yu;Kun-Wei Lin; 蔡榮輝
國立高雄師範大學	2002	InGaP/InGaAs/GaAs single d-doped pseudomorphic high electron mobility transistor with high barrier camel gate	Jung-Hui Tsai;Ming-Jui Lin;King-Poul Ge; 蔡榮輝
國立高雄師範大學	2002	A New InP/InGaAs d-doped heterojunction bipolar transistor	Jung-Hui Tsai;King-Poul Ge;Ming-Jui Lin; 蔡榮輝
國立高雄師範大學	2002	Performance of InGaP/InGaAs/GaAs camel-gate single d-doping pHEMT	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2002	Integrated fabrication of InGaP/GaAs d-doped Heterojunction bipolar transistor and doped-channel field effect transistor	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2002	High-Linearity InGaP/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) with Camel-Gate Structure	Jung-Hui Tsai;Jeng-Shyan Chen; 蔡榮輝
國立高雄師範大學	2002	d-Doping Field-Effect Transistors with an InGaP/GaAs Camel-Gate Structures	Jung-Hui Tsai;Jeng-Shyan Chen;Yu-Jui Chu; 蔡榮輝
國立高雄師範大學	2001-08	穿透式射極雙極性電晶體與金半場效電晶體共積體化之研究	蔡榮輝; Jung-Hui Tsai
國立高雄師範大學	2001	On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations	Jung-Hui Tsai;Wen-Chau Liu;Kuo-Hui Yu;Kun-Wei Lin;Cheng-Zu Wu;Kuan-Po Lin;Chih-Hung Y; 蔡榮輝
國立高雄師範大學	2001	Model and analysis of a delta-doping field-effect transistors utilizing an InGaP/GaAs camel-gate structure	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2001	Quantizied resonant-tunneling phenomena of AlGaAs/GaAs/InGaAs heterojunction bipolar transistors	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2001	Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures	Jung-Hui Tsai;W. C. Wang;His-Jen Pan;Kuo-Hui Yu;Kun-Wei Lin;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2001	Temperature dependence of gate current and breakdown behaviors in an n(+)-GaAs/p(+)-InGaP/n(-)-GaAs high-barrier gate field-effect transistor	Jung-Hui Tsai;Kuo-Hui Yu;Kun-Wei Lin;Chin-Chuan Cheng;Wen-Lung Chan;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2001	A new wide voltage operation regime double heterojunction bipolar transistor	Jung-Hui Tsai;Shiou-Ying Cheng;His-Jen Pan;Shun-Ching Feng;Kuo-Hui Yu;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2001	Perfromances of InGaP/GaAs Camel-Gate Field Effect Transistor with Double d-Doping Channels	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2001	Co-Integration of d-Doped Heterojunction Bipolar Transistor and Doped-Channel Field Effect Transistor	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2000-08	具有單原子層摻雜通道之高線性轉導磷化銦鎵/砷化鎵駝峰式閘極場效電晶體	蔡榮輝; Jung-Hui Tsai
國立高雄師範大學	2000	A novel resonant tunneling base transistor with bi-directional negative-differential-resistance phenomena	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2000	High-Linearity and Current-Enhancement Camel-Gate Field Effect Transistor Utilizing d-Doping Channels	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2000	High-Performance InGaP/GaAs Camel-Gate Transistor with d-Doping Sheets	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2000	Quantized Behaviors of AlGaAs/GaAs/InGaAs Heterojunction Bipolar Transistors (HBT’s)	Jung-Hui Tsai; 蔡榮輝

Showing items 201-225 of 294 (12 Page(s) Totally)
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