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Showing items 36-45 of 54  (6 Page(s) Totally)
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Institution Date Title Author
國立臺灣海洋大學 1998-11-12 High-responsivity porous-SiC thin-film pn junction photodetector K.H. Wu; Y.K. Fang; W.T. Hsieh; Jyh-Jier Ho; W.J. Lin; J.D. Hwang
南台科技大學 1998-11 High-responsivity porous-SiC thin-film pn junction photodetector K.H. Wu; Y. K. Fang; W.T. Hsieh; J.J. Ho; W.J. Lin; J.D. Hwang;謝文哲;吳坤憲
南台科技大學 1998-11 A high optical-gain β-SiC bulk-barrier phototransistor for high-temperature applications K.H. Wu; Y. K. Fang; J.J. Ho; W.T. Hsieh; W.H. Chuang; J.D. Hwang;謝文哲;吳坤憲
國立臺灣海洋大學 1998-11 A High Optical-Gain beta-SiC Bulk-Barrier Phototransistor for High-temperature Applications K.H. Wu; Y.K. Fang; Jyh-Jier Ho; W.T. Hsieh; W. H. Chuang; J. D. Hwang
國立臺灣海洋大學 1998-11 Narrow Width Effects of Bottom-Gate Polysilicon Thin Film Transistors D.N. Yaung; Y.K. Fang; K.C. Hwang; K.Y. Lee; K.H. Wu; J.J. Ho; C.Y. Chen; Y.J. Wang; M.S. Liang; J.Y. Lee; S.G. Wuu
南台科技大學 1998-09 High-speed amorphous silicon germanium infrared sensors prepared on crystalline silicon substrates J.J. Ho; Y. K. Fang; K.H. Wu; W.T. Hsieh; S.C. Huang; G.S. Chen; M.S. Ju; J.J. Lin;謝文哲;吳坤憲
國立臺灣海洋大學 1998-09 High-speed Amorphous Silicon Germanium Infrared Sensors Prepared on Crystalline Silicon Substrates Jyh-Jier Ho; Y.K. Fang; K.H. Wu; S.C. Huang; M.S. Ju; Jing-Jenn Lin
南台科技大學 1998-08 Novel SiC/Si heterostructure negative-differential-resistance diode for use as switch with high on/off current ratio and low power dissipation K.H. Wu; Y. K. Fang; J.J. Ho; W.T. Hsieh; T.J. Chen;謝文哲;吳坤憲
國立臺灣海洋大學 1998-08 Novel SiCSi Hetero-structure Negative-Differential-Resistance Diode for Use as Switch with High OnOff Current Ratio and Low Power Dissipation K.H. Wu; Y.K. Fang; Jyh-Jier Ho; W.T. Hsieh; T.J. Chen
南台科技大學 1998-06 A High Sensitivity Lead-Titanate (PbTiO3) Pyroelectric Thin-Film Infrared Sensor with Temperature Isolation Improvement Structure J.J. Ho; Y. K. Fang; K.H. Wu; W.T. Hsieh; C.W. Chu; C.R. Huang; M.S. Ju; C.P. Chang;謝文哲;吳坤憲

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