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Showing items 1-6 of 6  (1 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2019-04-02T05:59:40Z SRAM Write-Ability Improvement With Transient Negative Bit-Line Voltage Mukhopadhyay, Saibal; Rao, Rahul M.; Kim, Jae-Joon; Chuang, Ching-Te
國立交通大學 2017-04-21T06:49:40Z Impact of NBTI and PBTI in SRAM Bit-cells: Relative Sensitivities and Guidelines for Application-Specific Target Stability/Performance Bansal, Aditya; Rao, Rahul; Kim, Jae-Joon; Zafar, Sufi; Stathis, James H.; Chuang, Ching-Te
國立交通大學 2017-04-21T06:49:37Z Ring oscillator circuit structures for measurement of isolated NBTI/PBTI effects Kim, Jae-Joon; Rao, Rahul; Mukhopadhyay, Saibal; Chuang, Ching-Te
國立交通大學 2014-12-08T15:38:09Z SRAM Write-Ability Improvement With Transient Negative Bit-Line Voltage Mukhopadhyay, Saibal; Rao, Rahul M.; Kim, Jae-Joon; Chuang, Ching-Te
國立交通大學 2014-12-08T15:31:54Z Slew-Rate Monitoring Circuit for On-Chip Process Variation Detection Ghosh, Amlan; Rao, Rahul M.; Kim, Jae-Joon; Chuang, Ching-Te; Brown, Richard B.
國立交通大學 2014-12-08T15:09:22Z Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability Bansal, Aditya; Rao, Rahul; Kim, Jae-Joon; Zafar, Sufi; Stathis, James H.; Chuang, Ching-Te

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