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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:59:40Z |
SRAM Write-Ability Improvement With Transient Negative Bit-Line Voltage
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Mukhopadhyay, Saibal; Rao, Rahul M.; Kim, Jae-Joon; Chuang, Ching-Te |
| 國立交通大學 |
2017-04-21T06:49:40Z |
Impact of NBTI and PBTI in SRAM Bit-cells: Relative Sensitivities and Guidelines for Application-Specific Target Stability/Performance
|
Bansal, Aditya; Rao, Rahul; Kim, Jae-Joon; Zafar, Sufi; Stathis, James H.; Chuang, Ching-Te |
| 國立交通大學 |
2017-04-21T06:49:37Z |
Ring oscillator circuit structures for measurement of isolated NBTI/PBTI effects
|
Kim, Jae-Joon; Rao, Rahul; Mukhopadhyay, Saibal; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:38:09Z |
SRAM Write-Ability Improvement With Transient Negative Bit-Line Voltage
|
Mukhopadhyay, Saibal; Rao, Rahul M.; Kim, Jae-Joon; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:31:54Z |
Slew-Rate Monitoring Circuit for On-Chip Process Variation Detection
|
Ghosh, Amlan; Rao, Rahul M.; Kim, Jae-Joon; Chuang, Ching-Te; Brown, Richard B. |
| 國立交通大學 |
2014-12-08T15:09:22Z |
Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability
|
Bansal, Aditya; Rao, Rahul; Kim, Jae-Joon; Zafar, Sufi; Stathis, James H.; Chuang, Ching-Te |
Showing items 1-6 of 6 (1 Page(s) Totally)
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