臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	Repositories
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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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	臺大學術典藏NTU Scholars

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Institution	Date	Title	Author
國立高雄師範大學	2008	Investigation of InGaP/InGaAs n- and p-channel pseudomorphic modulation-doped field effect transistors with high gate turn-on voltages	Jung-Hui Tsai;Tzu-Yen Wen;King-Poul Zhu; 蔡榮輝
國立高雄師範大學	2005	High-performance InP/InGaAs pnp d-doped heterojunction bipolar transistor	Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學	2005	Multiple negative-differential-resistance switches based on an InGaP/GaAs/InGaAs step-compositional-emitter bipolar transistor for multiple-valued logic application	Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學	2005	Application of InGaP/GaAs/InGaAs step-compositional-emitter structures for multiple-route switch	Jung-Hui Tsai;Ying-Cheng Chu;Shao-Yen Chiu;King-Poul Zhu;Yu-Jui Chu;Jeng-Shyan Chen; 蔡榮輝
國立高雄師範大學	2004	A functional InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches	Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學	2004	High performances of InGaP/InGaAs/GaAs pseudomorphic modulation-doped field effect transistors using camel-gate structure	Jung-Hui Tsai;King-Poul Zhu;Shao-Yen Chiu;Ying-Cheng Chu; 蔡榮輝
國立高雄師範大學	2004	Investigation of InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches	Jung-Hui Tsai;Yu-Jui Chu;Jeng-Shyan Chen;King-Poul Zhu; 蔡榮輝
國立高雄師範大學	2004	Investigation of InP/InGaAs pnp δ-doped heterojunction bipolar transistor	Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學	2004	On the multiple-state switches of an InGaP/GaAs double heterostructure-emitter bipolar transistor	Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Ch; 蔡榮輝
國立高雄師範大學	2004	High gate turn-on voltages of InGaP/InGaAs camel-gate n- and p-channel pseudomorphic modulation-doped field effect transistors prepared by low-pressure MOCVD	Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Chiu; 蔡榮輝

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