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| 國立交通大學 |
2014-12-08T15:16:43Z |
A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness
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Wu, Woei-Cherng; Chao, Tien-Sheng; Peng, Wu-Chin; Yang, Wen-Luh; Wang, Jer-Chyi; Chen, Jian-Hao; Ma, Ming-Wen; Lai, Chao-Sung; Yang, Tsung-Yu; Chen, Tzu-Ping; Chen, Chien-Hung; Lin, Chih-Hung; Chen, Hwi-Huang; Ko, Joe |
| 國立交通大學 |
2014-12-08T15:12:55Z |
Optimized ONO thickness for multi-level and 2-bit/cell operation for wrapped-select-gate (WSG) SONOS memory
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Wu, Woei-Cherng; Chao, Tien-Sheng; Peng, Wu-Chin; Yang, Wen-Luh; Chen, Jian-Hao; Ma, Ming Wen; Lai, Chao-Sung; Yang, Tsung-Yu; Lee, Chien-Hsing; Hsieh, Tsung-Min; Liou, Jhyy Cheng; Chen, Tzu Ping; Chen, Chien Hung; Lin, Chih Hung; Chen, Hwi Huang; Ko, Joe |
| 國立成功大學 |
2008-04 |
Effect of etch stop layer stress on negative bias temperature instability of deep submicron p-type metal-oxide-semiconductor field effect transistors with dual gate oxide
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Chen, Ming-Shing; Fang, Yean-Kuen; Lee, Tung-Hsing; Lin, Chien-Ting; Chiang, Yen-Ting; Ko, Joe; Sheu, Yau Kae; Shen, Tsong Lin; Liao, Wen Yi |
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