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| 國立成功大學 |
2016-02 |
GaN-Based Light-Emitting Diodes Prepared With Shifted Laser Stealth Dicing
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Chang, Shoou-Jinn Chang; Chang, L. M.; Chen, J. Y.; Hsu, C. S.; Kuo, D. S.; Shen, C. F.; Chen, Wei-Shou; Ko, T. K. |
| 國立成功大學 |
2014-01 |
GaN-Based LEDs With Rough Surface and Selective KOH Etching
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Chang, Shoou-Jinn; Chang, L. M.; Kuo, D. S.; Ko, T. K.; Hon, S. J.; Li, Shuguang |
| 國立成功大學 |
2012-02 |
GaN-Based LEDs with Sapphire Debris Removed by Phosphoric Etching
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Chang, Shoou-Jinn; Kuo, D. S.; Lam, K. T.; Wen, K. H.; Ko, T. K.; Hon, S. J. |
| 國立成功大學 |
2012-02 |
GaN-based LEDs with Ar plasma treatment
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Kuo, D. S.; Lam, K. T.; Wen, K. H.; Chang, S. J.; Ko, T. K.; Hon, S. J. |
| 國立成功大學 |
2011-08 |
The reliability analysis of GaN-based light-emitting diodes with different current-blocking layers
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Chiou, Y. Z.; Chiang, T. H.; Kuo, D. S.; Chang, S. J.; Ko, T. K.; Hon, S. J. |
| 國立成功大學 |
2011-03 |
Improved Optical and ESD Characteristics for GaN-Based LEDs With an n(-)-GaN Layer
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Chiang, T. H.; Chiou, Y. Z.; Chang, S. J.; Wang, C. K.; Ko, T. K.; Lin, T. K.; Chiu, C. J.; Chang, S. P. |
| 國立成功大學 |
2009-07 |
GaN-Based LEDs Output Power Improved by Textured GaN/Sapphire Interface Using In Situ SiH4 Treatment Process During Epitaxial Growth
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Tsai, C. M.; Sheu, Jinn-Kong; Lai, Wei-Chih; Lee, Ming-Lun; Chang, Shoou-Jinn; Chang, C. S.; Ko, T. K.; Shen, C. F. |
| 國立成功大學 |
2009-07 |
GaN-Based Power Flip-Chip LEDs With Cu Submount
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Chang, Shoou-Jinn; Chen, W. S.; Shei, Shih-Chang; Shen, C. F.; Ko, T. K.; Tsai, J. M.; Lai, W. C.; Sheu, Jinn-Kong; Lin, A. J.; Hung, S. C. |
| 國立成功大學 |
2009-06-15 |
High-Brightness InGaN-GaN Power Flip-Chip LEDs
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Chang, Shoou-Jinn; Chen, W. S.; Shei, Shih-Chang; Kuo, C. T.; Ko, T. K.; Shen, C. F.; Tsai, J. M.; Lai, Wei-Chi; Sheu, Jinn-Kong; Lin, A. J. |
| 國立成功大學 |
2009-04-15 |
Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls
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Kuo, D. S.; Chang, Shoou-Jinn; Ko, T. K.; Shen, C. F.; Hon, S. J.; Hung, S. C. |
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