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"ko t k"的相關文件
顯示項目 11-32 / 32 (共1頁) 1 每頁顯示[10|25|50]項目
| 實踐大學 |
2009 |
GaN-Based Power Flip-Chip LEDs With Cu Submount
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Chang, S.J.;Chen, W.S.;Shei, S.C.;Shen, C.F.;Ko, T.K.;Tsai, J.M.;Lai, W.C.;Sheu, J.K.;Lin, A.J.;Hung, S.C. |
| 實踐大學 |
2009 |
Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls
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Kuo, D.S.;Chang, S.J.;Ko, T.K.;Shen, C.F.;Hon, S.J.;Hung, S.C. |
| 國立成功大學 |
2008-09 |
Nitride-Based LEDs With a Hybrid Al Mirror +TiO2/SiO2 DBR Backside Reflector
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Chang, Shoou-Jinn; Shen, C. F.; Hsieh, M. H.; Kuo, C. T.; Ko, T. K.; Chen, W. S.; Shei, Shih-Chang |
| 國立成功大學 |
2008 |
Highly ESD-reliable, nitride-based heterostructure p-i-n photodetectors with a p-AlGaN blocking layer
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Liu, C. H.; Lam, T. K.; Ko, T. K.; Chang, Shoou-Jinn; Sun, Y. X. |
| 國立成功大學 |
2007-11 |
Highly reliable high-brightness GaN-based flip chip LEDs
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Chang, Shoou-Jinn; Chen, W. S.; Shei, Shih-Chang; Ko, T. K.; Shen, C. F.; Hsu, Y. P.; Chang, C. S.; Tsai, J. M.; Lai, W. C.; Lin, A. J. |
| 國立成功大學 |
2007-07-02 |
Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography
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Chang, Shoou-Jinn; Shen, C. F.; Chen, W. S.; Kuo, C. T.; Ko, T. K.; Shei, Shih-Chang; Sheu, Jinn-Kong |
| 國立成功大學 |
2007-05-15 |
Nitride-based high-power flip-chip LED with double-side patterned sapphire substrate
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Shen, C. F.; Chang, Shoou-Jinn; Chen, W. S.; Ko, T. K.; Kuo, C. T.; Shei, Shih-Chang |
| 國立成功大學 |
2007-05 |
Nitride-based Schottky barrier sensor module with high electrostatic discharge reliability
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Horng, J. J.; Su, Yan-Kuin; Chang, Shoou-Jinn; Ko, T. K.; Shei, Shih-Chang |
| 國立成功大學 |
2007-04-15 |
AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates
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Chang, Shoou-Jinn; Ko, T. K.; Sheu, Jinn-Kong; Shei, Shih-Chang; Lai, W. C.; Chiou, Y. Z.; Lin, Y. C.; Chang, C. S.; Chen, W. S.; Shen, C. F. |
| 國立成功大學 |
2007 |
Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes
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Chang, Shoou-Jinn; Shen, C. F.; Chen, W. S.; Ko, T. K.; Kuo, C. T.; Yu, Kuo-Hui; Shei, Shih-Chang; Chiou, Y. Z. |
| 國立成功大學 |
2006-11 |
Nitride-based light emitting diodes with textured sidewalls and pillar waveguides
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Shen, C. F.; Chang, Shoou-Jinn; Ko, T. K.; Kuo, C. T.; Shei, Shih-Chang; Chen, W. S.; Lee, Ching-Ting; Chang, C. S.; Chiou, Yu-Zung |
| 國立成功大學 |
2006-09 |
Highly reliable nitride-based LEDs with internal ESD protection diodes
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Chang, Shoou-Jinn; Shen, C. F.; Shei, Shih-Chang; Chuang, R. W.; Chang, C. S.; Chen, W. S.; Ko, T. K.; Sheu, Jinn-Kong |
| 國立成功大學 |
2006-08 |
Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors
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Chang, Shoou-Jinn; Chen, W. S.; Lin, Y. C.; Chang, C. S.; Ko, T. K.; Hsu, Y. P.; Shen, C. F.; Tsai, J. M.; Shei, Shih-Chang |
| 國立成功大學 |
2006-08 |
Nitride-based flip-chip p-i-n photodiodes
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Ko, T. K.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Chang, C. S.; Shei, Shih-Chang; Sheu, Jinn-Kong; Lai, W. C.; Lin, Y. C.; Chen, W. S.; Shen, C. F. |
| 國立成功大學 |
2006-08 |
Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors
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Ko, T. K.; Shei, Shih-Chang; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Lin, Y. C.; Chang, C. S.; Chen, W. S.; Wang, C. K.; Sheu, Jinn-Kong; Lai, W. C. |
| 國立成功大學 |
2006-08 |
AlGaN/GaN Schottky-barrier UV-B bandpass photodetectors with ITO contacts and LT-GaN cap layers
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Ko, T. K.; Chang, Shoou-Jinn; Sheu, Jinn-Kong; Shei, Shih-Chang; Chiou, Yu-Zung; Lee, M. L.; Shen, C. F.; Chang, S. P.; Lin, K. W. |
| 國立成功大學 |
2006-08 |
InGaN p-i-n ultraviolet - A band-pass photodetectors
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Ko, T. K.; Shei, Shih-Chang; Chang, Shoou-Jinn; Chiou, Yu-Zung; Lin, R. M.; Chen, W. S.; Shen, C. F.; Chang, C. S.; Lin, K. W. |
| 國立成功大學 |
2006-04 |
GaN-based p-i-n sensors with ITO contacts
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Chang, Shoou-Jinn; Ko, T. K.; Su, Yan-Kuin; Chiou, Yu-Zung; Chang, C. S.; Shei, Shih-Chang; Sheu, Jinn-Kong; Lai, W. C.; Lin, Y. C.; Chen, W. S. |
| 國立成功大學 |
2006-01 |
Rapid thermal annealed InGaN/GaN flip-chip LEDs
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Chen, W. S.; Shei, Shih-Chang; Chang, Shoou-Jinn; Su, Yan-Kuin; Lai, W. C.; Kuo, C. H.; Lin, Y. C.; Chang, C. S.; Ko, T. K.; Hsu, Y. P.; Shen, C. F. |
| 國立成功大學 |
2005-10 |
The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors
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Wang, C.; Ko, T. K.; Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Wen, Ten-Chin; Kuo, Chih-Hung; Chiou, Y. Z. |
| 國立成功大學 |
2005-09-15 |
AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers
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Ko, T. K.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, M. L.; Chang, C. S.; Lin, Y. C.; Shei, Shih-Chang; Sheu, Jinn-Kong; Chen, W. S.; Shen, C. F. |
| 國立成功大學 |
2005 |
GaN MIS capacitors with Photo-CVD SiNxOy insulating layers
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Chang, Shoou-Jinn; Wang, C. K.; Su, Yan-Kuin.; Chang, C. S.; Lin, T. K.; Ko, T. K.; Liu, H. L. |
顯示項目 11-32 / 32 (共1頁) 1 每頁顯示[10|25|50]項目
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