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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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機構 日期 題名 作者
臺大學術典藏 2018-09-10T03:46:44Z GaAs MOSFET-Materials Physics and Devices Hong, M;Kwo, J;Kortan, AR;Mannaerts, JP;Wang, YC;Lay, TS; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wang, YC; Lay, TS; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:36Z Initial growth of Gã 2Õ 3 (Gd̃ 2Õ 3) on GaAs: Key to the attainment of a low interfacial density of states Hong, M; Lu, ZH; Kwo, J; Kortan, AR; Mannaerts, JP; Krajewski, JJ; Hsieh, KC; Chou, LJ; Cheng, KY; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:36Z High E gate dielectrics Gd2O3 and Y2O3 for silicon Boone, T; Krajewski, JJ; Sergent, AM; Rosamilia, JM; MINGHWEI HONG; Mannaerts, JP; Kwo, J; Hong, M; Kortan, AR; Queeney, KT; Chabal, YJ
臺大學術典藏 2018-09-10T03:28:35Z Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:35Z Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:34Z Structural modifications of the Gd 2 O 3 (110) films on GaAs (100) Steiner, C; Bolliger, B; Erbudak, M; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:34Z Structure of epitaxial Gd2O3 films and their registry on GaAs (100) substrates Bolliger, B; Erbudak, M; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:33Z Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:33Z Insulator/GaN Heterostructures of Low Interfacial Density of States Hong, M; Ng, HM; Kwo, J; Kortan, AR; Baillargeon, JN; Anselm, KA; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:33Z Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG

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