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Taiwan Academic Institutional Repository >
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"kortan ar"
Showing items 51-75 of 84 (4 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Advances in high & kappa gate dielectrics for Si and III-V semiconductors
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Kwo, J;Hong, M;Busch, B;Muller, DA;Chabal, YJ;Kortan, AR;Mannaerts, JP;Yang, B;Ye, P;Gossmann, H;others; Kwo, J; Hong, M; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:32Z |
GaN/Gd2O3/GaN Single Crystal Heterostructure
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Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:32Z |
GaN/Gd2O3/GaN Single Crystal Heterostructure
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Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:29Z |
Papers presented at ECASIA'01-Microelectronics and Optoelectronics-Structure of Gd2O3 films epitaxially grown on GaAs (100) and GaN (0001) surfaces
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Fluckiger, T;Erbudak, M;Hensch, A;Weisskopf, Y;Hong, M;Kortan, AR; Fluckiger, T; Erbudak, M; Hensch, A; Weisskopf, Y; Hong, M; Kortan, AR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:29Z |
Papers presented at ECASIA'01-Microelectronics and Optoelectronics-Structure of Gd2O3 films epitaxially grown on GaAs (100) and GaN (0001) surfaces
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Fluckiger, T;Erbudak, M;Hensch, A;Weisskopf, Y;Hong, M;Kortan, AR; Fluckiger, T; Erbudak, M; Hensch, A; Weisskopf, Y; Hong, M; Kortan, AR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:47Z |
MBE growth and properties of Fe 3 (Al, Si) on GaAs (100)
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Hong, M; Chen, HS; Kwo, J; Kortan, AR; Mannaerts, JP; Weir, BE; Feldman, LC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:47Z |
Properties of high k gate dielectrics Gd2O3 and Y2O3 for Si
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MINGHWEI HONG; others; Lay, TS; Sapjeta, BJ; Chu, SNG; Muller, DA; Opila, RL; Chabal, YJ; Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal, YJ;Opila, RL;Muller, DA;Chu, SNG;Sapjeta, BJ;Lay, TS;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL |
| 臺大學術典藏 |
2018-09-10T03:46:47Z |
Properties of high k gate dielectrics Gd2O3 and Y2O3 for Si
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MINGHWEI HONG; others; Lay, TS; Sapjeta, BJ; Chu, SNG; Muller, DA; Opila, RL; Chabal, YJ; Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal, YJ;Opila, RL;Muller, DA;Chu, SNG;Sapjeta, BJ;Lay, TS;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL |
| 臺大學術典藏 |
2018-09-10T03:46:46Z |
New phase formation of Gd2O3 films on GaAs (100)
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Kortan, AR;Hong, M;Kwo, J;Mannaerts, JP;Krajewski, JJ;Kopylov, N;Steiner, C;Bolliger, B;Erbudak, M; Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Krajewski, JJ; Kopylov, N; Steiner, C; Bolliger, B; Erbudak, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:46Z |
New phase formation of Gd2O3 films on GaAs (100)
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Kortan, AR;Hong, M;Kwo, J;Mannaerts, JP;Krajewski, JJ;Kopylov, N;Steiner, C;Bolliger, B;Erbudak, M; Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Krajewski, JJ; Kopylov, N; Steiner, C; Bolliger, B; Erbudak, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:45Z |
Properties of High kappa Gate Dielectrics Gd_2O_3, Y_2O_3, and yttria stabilized ZrO2 for Si
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Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal Opila Jr, YJ;Muller, DA;Chu, SNG;Sapjeta, BJ;Mannaerts, JP;Boone, T;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal Opila Jr, YJ; Muller, DA; Chu, SNG; Sapjeta, BJ; Mannaerts, JP; Boone, T; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:45Z |
Properties of High kappa Gate Dielectrics Gd_2O_3, Y_2O_3, and yttria stabilized ZrO2 for Si
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Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal Opila Jr, YJ;Muller, DA;Chu, SNG;Sapjeta, BJ;Mannaerts, JP;Boone, T;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal Opila Jr, YJ; Muller, DA; Chu, SNG; Sapjeta, BJ; Mannaerts, JP; Boone, T; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:44Z |
Structure of Gd_2O3 films on GaAs (100)
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Kortan, AR;Hong, M;Kwo, J;Mannaerts, JP;Krajewski, JJ;Kopylov, N;Steiner, C;Bolliger, B;Erbudak, M;others; Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Krajewski, JJ; Kopylov, N; Steiner, C; Bolliger, B; Erbudak, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:44Z |
Structure of Gd_2O3 films on GaAs (100)
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Kortan, AR;Hong, M;Kwo, J;Mannaerts, JP;Krajewski, JJ;Kopylov, N;Steiner, C;Bolliger, B;Erbudak, M;others; Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Krajewski, JJ; Kopylov, N; Steiner, C; Bolliger, B; Erbudak, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:44Z |
GaAs MOSFET-Materials Physics and Devices
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Hong, M;Kwo, J;Kortan, AR;Mannaerts, JP;Wang, YC;Lay, TS; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wang, YC; Lay, TS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:44Z |
GaAs MOSFET-Materials Physics and Devices
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Hong, M;Kwo, J;Kortan, AR;Mannaerts, JP;Wang, YC;Lay, TS; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wang, YC; Lay, TS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:36Z |
Initial growth of Gã 2Õ 3 (Gd̃ 2Õ 3) on GaAs: Key to the attainment of a low interfacial density of states
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Hong, M; Lu, ZH; Kwo, J; Kortan, AR; Mannaerts, JP; Krajewski, JJ; Hsieh, KC; Chou, LJ; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:36Z |
High E gate dielectrics Gd2O3 and Y2O3 for silicon
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Boone, T; Krajewski, JJ; Sergent, AM; Rosamilia, JM; MINGHWEI HONG; Mannaerts, JP; Kwo, J; Hong, M; Kortan, AR; Queeney, KT; Chabal, YJ |
| 臺大學術典藏 |
2018-09-10T03:28:35Z |
Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions
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Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:35Z |
Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes
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Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:34Z |
Structural modifications of the Gd 2 O 3 (110) films on GaAs (100)
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Steiner, C; Bolliger, B; Erbudak, M; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:34Z |
Structure of epitaxial Gd2O3 films and their registry on GaAs (100) substrates
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Bolliger, B; Erbudak, M; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes
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Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
Insulator/GaN Heterostructures of Low Interfacial Density of States
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Hong, M; Ng, HM; Kwo, J; Kortan, AR; Baillargeon, JN; Anselm, KA; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions
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Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG |
Showing items 51-75 of 84 (4 Page(s) Totally)
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