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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:39:36Z |
High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mu m applications grown by molecular beam epitaxy
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Wang, JS; Kovsh, AR; Hsiao, RS; Chen, LP; Chen, JF; Lay, TS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:37:23Z |
Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 mu m
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Wang, JS; Hsiao, RS; Lin, G; Lin, KF; Liu, HY; Lai, CM; Wei, L; Liang, CY; Chi, JY; Kovsh, AR; Maleev, NA; Livshits, DA; Chen, JF; Yu, HC; Ustinov, VM |
| 國立交通大學 |
2014-12-08T15:37:14Z |
Single mode 1.3 mu m InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy
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Hsiao, RS; Wang, JS; Lin, KF; Wei, L; Liu, HY; Liang, CY; Lai, CM; Kovsh, AR; Maleev, NA; Chi, JY; Chen, JF |
| 國立交通大學 |
2014-12-08T15:18:42Z |
Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs
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Yang, HPD; Lu, C; Hsiao, R; Chiou, C; Lee, C; Huang, C; Yu, H; Wang, C; Lin, K; Maleev, NA; Kovsh, AR; Sung, C; Lai, C; Wang, J; Chen, J; Lee, T; Chi, JY |
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