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| 臺大學術典藏 |
2019-12-27T07:49:30Z |
Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8 As by Ga2O3(Gd 2O3) passivation
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Lin, C.A.;Chiu, H.C.;Chiang, T.H.;Lin, T.D.;Chang, Y.H.;Chang, W.H.;Chang, Y.C.;Wang, W.-E.;Dekoster, J.;Hoffmann, T.Y.;Hong, M.;Kow, J.; Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kow, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:30Z |
Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8 As by Ga2O3(Gd 2O3) passivation
|
Lin, C.A.;Chiu, H.C.;Chiang, T.H.;Lin, T.D.;Chang, Y.H.;Chang, W.H.;Chang, Y.C.;Wang, W.-E.;Dekoster, J.;Hoffmann, T.Y.;Hong, M.;Kow, J.; Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kow, J.; MINGHWEI HONG |
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