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| 國立交通大學 |
2017-04-21T06:49:39Z |
3D 65nm CMOS with 320 degrees C Microwave Dopant Activation
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Lee, Yao-Jen; Lu, Yu-Lun; Hsueh, Fu-Kuo; Huang, Kuo-Chin; Wan, Chia-Chen; Cheng, Tz-Yen; Han, Ming-Hung; Kowalski, Jeff M.; Kowalski, Jeff E.; Heh, Dawei; Chuang, Hsi-Ta; Li, Yiming; Chao, Tien-Sheng; Wu, Ching-Yi; Yang, Fu-Liang |
| 國立交通大學 |
2014-12-08T15:06:58Z |
Nanoscale p-MOS Thin-Film Transistor With TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation
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Lu, Yu-Lun; Hsueh, Fu-Kuo; Huang, Kuo-Ching; Cheng, Tz-Yen; Kowalski, Jeff M.; Kowalski, Jeff E.; Lee, Yao-Jen; Chao, Tien-Sheng; Wu, Ching-Yi |
| 大葉大學 |
2010-05 |
Nanoscale p-MOS Thin-Film Transistor with TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation
|
Lu, Yu-Lun;Hsueh, Fu-Kuo;Huang, Kuo-Ching;Cheng, Tz-Yen;Kowalski, Jeff M.;Kowalski, Jeff E.;Lee, Yao-Jen;Chao, Tien-Sheng;Wu, Ching-Yi |
| 大葉大學 |
2009-02 |
A Low Temperature Microwave Anneal Process for Boron-doped Ultra-Thin Ge Epi-layer on Si Substrate
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Lee, Yao-Jen;Hsueh, Fu-Kuo;Huang, Shih-Chiang;Kowalski, Jeff M.;Kowalski, Jeff E.;Cheng, Alex T. Y.;Koo, Ann;Luo, Guang-Li;Wu, Ching-Yi |
Showing items 1-4 of 4 (1 Page(s) Totally)
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