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Institution Date Title Author
國立成功大學 2009-03-01 The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy Wong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Yi-Cheng; Ku, Jui-Tai; Lee, Ching-Ting; Chang, Chun-Wei

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