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| 國立交通大學 |
2019-08-02T02:24:18Z |
Influence on light-induced degradation in Cz-Si PERC cells under light soaking of variant wavelength and intensity
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Wu, Ching-Wen; Lee, Yen-Chun; Yu, Li-Chieh; Tsai, Min-An; Wu, Hung-Sen; Kuo, C. W.; Kuan, T. M.; Yu, C. Y.; Yu, Peichen |
| 臺大學術典藏 |
2018-09-10T08:15:12Z |
Insulating halos to boost planar NMOSFET performance
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Hsu, W.-W.;Lai, C.-Y.;Liu, C.W.;Ko, C.-H.;Kuan, T.-M.;Wang, T.-J.;Lee, W.-C.;Wann, C.H.; Hsu, W.-W.; Lai, C.-Y.; Liu, C.W.; Ko, C.-H.; Kuan, T.-M.; Wang, T.-J.; Lee, W.-C.; Wann, C.H.; CHEE-WEE LIU |
| 國立臺灣科技大學 |
2009 |
ZnSe nanowire photodetector prepared on oxidized silicon substrate by molecular-beam epitaxy
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Hsiao C.H.; Chang S.J.; Wang S.B.; Chang S.P.; Li T.C.; Lin W.J.; Ko C.H.; Kuan T.M.; Huang B.R. |
| 國立成功大學 |
2009 |
ZnSe Nanowire Photodetector Prepared on Oxidized Silicon Substrate by Molecular-Beam Epitaxy
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Hsiao, C. H.; Chang, Shoou-Jinn; Wang, S. B.; Chang, S. P.; Li, T. C.; Lin, W. J.; Ko, C. H.; Kuan, T. M.; Huang, B. R. |
| 國立成功大學 |
2007-10-15 |
Crystal growth and characterization of AlGaN/GaN heterostructures prepared on vicinal-cut sapphire (0001) substrates
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Chuang, R. W.; Yu, C. L.; Chang, Shoou-Jinn; Chang, Ping-Chuan; Lin, J. C.; Kuan, T. M. |
| 國立成功大學 |
2006-03-15 |
The influence of vicinal sapphire substrate on GaN epilayers and LED structures grown by metalorganic chemical vapor deposition
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Lin, J. C.; Su, Yan-Kuin; Lan, W. H.; Kuan, T. M.; Chen, Wen-Ray; Cheng, Y. C.; Lin, W. J.; Tzeng, Y. C.; Shin, H. Y. |
| 國立成功大學 |
2004-12-10 |
High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers
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Kuan, T. M.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lin, J. C.; Wei, S. C.; Wang, C. K.; Huang, C. I.; Lan, W. H.; Bardwell, Jennifer A.; Tang, Haipeng; Lin, W. J.; Cherng, Y. T. |
| 國立成功大學 |
2003-11 |
Nitride-based 2DEG photodetectors with a large AC responsivity
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Chang, Shoou-Jinn; Kuan, T. M.; Ko, C. H.; Su, Yan-Kuin; Webb, J. B.; Bardwell, Jennifer A.; Liu, Y.; Tang, Haipeng; Lin, W. J.; Cherng, Ya-Tung; Lan, W. H. |
| 國立成功大學 |
2003-10 |
Flicker noise of GaN-based heterostructure field-effect transistors with Si-doped AlGaN carrier injection layer
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Su, Yan-Kuin; Wei, Sun-Chin; Wang, R. L.; Chang, Shoou-Jinn; Ko, C. H.; Kuan, T. M. |
| 國立成功大學 |
2003-09-28 |
Two-step epitaxial lateral overgrowth of GaN
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Ko, C. H.; Su, Yan-Kuin; Chang, Shoou-Jinn; Tsai, Tzong-Yow; Kuan, T. M.; Lan, W. H.; Lin, J. C.; Lin, W. J.; Cherng, Ya-Tung; Webb, J. B. |
| 國立成功大學 |
2003-07-25 |
Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching
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Su, Yan-Kuin; Chang, Shoou-Jinn; Kuan, T. M.; Ko, C. H.; Webb, J. B.; Lan, W. H.; Cherng, Ya-Tung; Chen, S. C. |
| 國立成功大學 |
2003-07-15 |
Nitride-based HFETs with carrier confinement layers
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Su, Yan-Kuin; Chang, Shoou-Jinn; Kuan, T. M.; Ko, C. H.; Webb, J. B.; Lan, W. H.; Cherng, Ya-Tung; Chen, S. C. |
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