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机构 日期 题名 作者
義守大學 2011-03 Control of threshold voltage and improved subthreshold swing in enhancement-mode InGaP/InGaAs metal–oxide–semiconductor pseudomorphic high-electron-mobility transistor Kuan-Wei Lee;Hsien-Cheng Lin;Cheng-Chieh Wu;Fang-Ming Lee;Yeong-Her Wang
義守大學 2010-11 Control of threshold voltage and suppressed leakage current on AlGaAs/InGaAs PHEMT by liquid phase oxidation Kuan-Wei Lee;Hsien-Cheng Lin;Fang-Ming Lee;Wei-Sheng Chen;Yeong-Her Wang
義守大學 2010-09 InAs native oxides prepared by liquid phase oxidation method Hsien-Cheng Lin;Kuan-Wei Lee;Chia-Hong Hsieh;Yu-Chun Cheng;Yeong-Her Wang
義守大學 2010-06 Investigation of SiO2 on AlGaAs prepared by liquid phase deposition Kuan-Wei Lee;Jung-Sheng Huang;Yu-Lin Lu;Fang-Ming Lee;Hsien-Cheng Lin;Jian-Jun Huang;Yeong-Her Wang
義守大學 2010-05 Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess Kuan-Wei Lee;Hsien-Cheng Lin;Fang-Ming Lee;Hou-Kuei Huang;Yeong-Her Wang
義守大學 2009-06 Preparation of Biopolymers Nanoparticles by Ultrasound Atomization Kuan Wei Lee;Manousakas, I.;Shyh Ming Kuo;Shwu Jen Chang
義守大學 2009 Comprehensive Study of InAlAs/InGaAs Metamorphic High Electron Mobility Transistor with Oxidized InAlAs Gate Kuan-Wei Lee;Hsien-Chang Lin;Kai-Lin Lee;Chia-Hong Hsieh;Yeong-Her Wang
義守大學 2009 Selective Liquid Phase Oxidation of AlGaAs and Application to AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor Kuan-Wei Lee;Hsien-Chang Lin;Fang-Ming Lee;Yeong-Her Wang
義守大學 2008-10 Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs MOS-MHEMT without gate recess Kuan-Wei Lee;Hsien-Chang Lin;Kai-Lin Lee;Yeong-Her Wang
義守大學 2008-05 Liquid phase oxidation on InAlAs and application to gate insulator of InAlAs/InGaAs HEMT lattice-matched to InP substrate Kuan-Wei Lee;Hsien-Chang Lin;Ja-Hong Hsieh;Yu-Chun Cheng;Yeong-Her Wang
義守大學 2008 Selective liquid-phase oxidation of InGaAs and application to metal-oxide-semiconductor InAlAs/InGaAs metamorphic HEMT without gate recess Kuan-Wei Lee;Hsien-Chang Lin;Chao-Hsien Tu;Kai-Lin Lee;Yeong-Her Wang
義守大學 2007-05 An Analytical Model and Measurement on the InAlAs/InGaAs High-Electron-Mobility Transistor with Oxidized InAlAs Gate Jung-Sheng Huang;Kuan-Wei Lee;Fang-Ming Lee;Yung-Sheng Huang;Yeong-Her Wang
義守大學 2007-03 Improvement of impact ionization effect and subthreshold current in InAlAs/InGaAs metal-oxide-semiconductor metamorphic HEMT with a liquid-phase oxidized InAlAs as gate insulator Kuan-Wei Lee;Kai-Lin Lee;Xian-Zheng Lin;Chao-Hsien Tu;Yeong-Her Wang
義守大學 2007 Near-room-temperature selective oxidation on InAlAs and application to In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMTs Kuan-Wei Lee;Kai-Lin Lee;Hsien-Chang Lin;Chao-Hsien Tu;Chih-Chun Hu;Yeong-Her Wang
義守大學 2007 InGaP/InGaAs MOS-PHEMT with a liquid phase oxidized InGaP gate insulator Hsien-Chang Lin;Kuan-Wei Lee;Chao-Hsien Tu;Po-Wen Sze;Yeong-Her Wang;
義守大學 2006-10 Subthreshold Characteristics and High-Frequency Performance in InAlAs/InGaAs MHEMT with a Liquid Phase Oxidized InAlAs Gate Kuan-Wei Lee;Kai-Lin Lee;Xian-Zheng Lin;Chao-Hsien Tu;Yeong-Her Wang

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