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机构 日期 题名 作者
義守大學 2008 Selective liquid-phase oxidation of InGaAs and application to metal-oxide-semiconductor InAlAs/InGaAs metamorphic HEMT without gate recess Kuan-Wei Lee;Hsien-Chang Lin;Chao-Hsien Tu;Kai-Lin Lee;Yeong-Her Wang
義守大學 2007-05 An Analytical Model and Measurement on the InAlAs/InGaAs High-Electron-Mobility Transistor with Oxidized InAlAs Gate Jung-Sheng Huang;Kuan-Wei Lee;Fang-Ming Lee;Yung-Sheng Huang;Yeong-Her Wang
義守大學 2007-03 Improvement of impact ionization effect and subthreshold current in InAlAs/InGaAs metal-oxide-semiconductor metamorphic HEMT with a liquid-phase oxidized InAlAs as gate insulator Kuan-Wei Lee;Kai-Lin Lee;Xian-Zheng Lin;Chao-Hsien Tu;Yeong-Her Wang
義守大學 2007 Near-room-temperature selective oxidation on InAlAs and application to In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMTs Kuan-Wei Lee;Kai-Lin Lee;Hsien-Chang Lin;Chao-Hsien Tu;Chih-Chun Hu;Yeong-Her Wang
義守大學 2007 InGaP/InGaAs MOS-PHEMT with a liquid phase oxidized InGaP gate insulator Hsien-Chang Lin;Kuan-Wei Lee;Chao-Hsien Tu;Po-Wen Sze;Yeong-Her Wang;
義守大學 2006-10 Subthreshold Characteristics and High-Frequency Performance in InAlAs/InGaAs MHEMT with a Liquid Phase Oxidized InAlAs Gate Kuan-Wei Lee;Kai-Lin Lee;Xian-Zheng Lin;Chao-Hsien Tu;Yeong-Her Wang

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