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機構	日期	題名	作者
義守大學	2013-02	Calculation of internal quantum efficiency of β-FeSi2 light-emitting diode	Jung-Sheng Huang;Kuan-Wei Lee;Jung-Chin Chang;Chan-Cheng Yeh
義守大學	2013-02	Analysis of the conversion efficiencies of β-FeSi2 and BaSi2 solar cells	Jung-Sheng Huang;Kuan-Wei Lee;Shang-Ru Li;Cheng-Lung She
義守大學	2013-02	Numerical simulation of metal-oxide-semiconductor metamorphic high-electron-mobility transistor	Jung-Sheng Huang;Kuan-Wei Lee;Po-Yu Lin;Yu-Hsiang Tseng;Chih-Hung Tu;Wuttinun Raksavas
義守大學	2012-12	Improved Low-Frequency Noise and Microwave Performance of Enhancement-Mode InGaP/InGaAs PHEMT with a Liquid-Phase Oxidized GaAs without a Gate Recess	Kuan-Wei Lee;Wei-Sheng Chen
義守大學	2012-11	Improved Impact Ionization in AlGaAs/InGaAs PHEMT with a Liquid Phase Deposited SiO2 as the Gate Dielectric	Kuan-Wei Lee
義守大學	2012-08	Enhancement-mode pseudomorphic high-electron-mobility transistor with a nanoscale oxidized GaAs gate	Kuan-Wei Lee;Hsien-Cheng Lin;Yeong-Her Wang
義守大學	2012-02	InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric	Hsien-Cheng Lin;Fang-Ming Lee;Yu-Chun Cheng;Kuan-Wei Lee;Feri Adriyanto;Yeong-Her Wang
義守大學	2012-02	Investigation of TiO2 on AlGaAs prepared by liquid phase deposition and its application	Kuan-Wei Lee;Jung-Sheng Huang;Yu-Lin Lu;Fang-Ming Lee;Hsien-Cheng Lin;Tsu-Yi Wu;Yeong-Her Wang
義守大學	2011-10	Characteristics of InGaP/InGaAs MOS-PHEMT with liquid phase-oxidized GaAs gate dielectric	Hsien-Cheng Lin;Cheng-Chieh Wu;Fang-Ming Lee;Kuan-Wei Lee;Feri Adriyanto;Yeong-Her Wang
義守大學	2011-03	Liquid-phase-deposited SiO2 on AlGaAs and its application	Kuan-Wei Lee;Jung-Sheng Huang;Yu-Lin Lu;Fang-Ming Lee;Hsien-Cheng Lin;Jian-Jun Huang;Yeong-Her Wang
義守大學	2011-03	Control of threshold voltage and improved subthreshold swing in enhancement-mode InGaP/InGaAs metal–oxide–semiconductor pseudomorphic high-electron-mobility transistor	Kuan-Wei Lee;Hsien-Cheng Lin;Cheng-Chieh Wu;Fang-Ming Lee;Yeong-Her Wang
義守大學	2010-11	Control of threshold voltage and suppressed leakage current on AlGaAs/InGaAs PHEMT by liquid phase oxidation	Kuan-Wei Lee;Hsien-Cheng Lin;Fang-Ming Lee;Wei-Sheng Chen;Yeong-Her Wang
義守大學	2010-09	InAs native oxides prepared by liquid phase oxidation method	Hsien-Cheng Lin;Kuan-Wei Lee;Chia-Hong Hsieh;Yu-Chun Cheng;Yeong-Her Wang
義守大學	2010-06	Investigation of SiO2 on AlGaAs prepared by liquid phase deposition	Kuan-Wei Lee;Jung-Sheng Huang;Yu-Lin Lu;Fang-Ming Lee;Hsien-Cheng Lin;Jian-Jun Huang;Yeong-Her Wang
義守大學	2010-05	Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess	Kuan-Wei Lee;Hsien-Cheng Lin;Fang-Ming Lee;Hou-Kuei Huang;Yeong-Her Wang
義守大學	2009-06	Preparation of Biopolymers Nanoparticles by Ultrasound Atomization	Kuan Wei Lee;Manousakas, I.;Shyh Ming Kuo;Shwu Jen Chang
義守大學	2009	Comprehensive Study of InAlAs/InGaAs Metamorphic High Electron Mobility Transistor with Oxidized InAlAs Gate	Kuan-Wei Lee;Hsien-Chang Lin;Kai-Lin Lee;Chia-Hong Hsieh;Yeong-Her Wang
義守大學	2009	Selective Liquid Phase Oxidation of AlGaAs and Application to AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor	Kuan-Wei Lee;Hsien-Chang Lin;Fang-Ming Lee;Yeong-Her Wang
義守大學	2008-10	Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs MOS-MHEMT without gate recess	Kuan-Wei Lee;Hsien-Chang Lin;Kai-Lin Lee;Yeong-Her Wang
義守大學	2008-05	Liquid phase oxidation on InAlAs and application to gate insulator of InAlAs/InGaAs HEMT lattice-matched to InP substrate	Kuan-Wei Lee;Hsien-Chang Lin;Ja-Hong Hsieh;Yu-Chun Cheng;Yeong-Her Wang
義守大學	2008	Selective liquid-phase oxidation of InGaAs and application to metal-oxide-semiconductor InAlAs/InGaAs metamorphic HEMT without gate recess	Kuan-Wei Lee;Hsien-Chang Lin;Chao-Hsien Tu;Kai-Lin Lee;Yeong-Her Wang
義守大學	2007-05	An Analytical Model and Measurement on the InAlAs/InGaAs High-Electron-Mobility Transistor with Oxidized InAlAs Gate	Jung-Sheng Huang;Kuan-Wei Lee;Fang-Ming Lee;Yung-Sheng Huang;Yeong-Her Wang
義守大學	2007-03	Improvement of impact ionization effect and subthreshold current in InAlAs/InGaAs metal-oxide-semiconductor metamorphic HEMT with a liquid-phase oxidized InAlAs as gate insulator	Kuan-Wei Lee;Kai-Lin Lee;Xian-Zheng Lin;Chao-Hsien Tu;Yeong-Her Wang
義守大學	2007	Near-room-temperature selective oxidation on InAlAs and application to In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMTs	Kuan-Wei Lee;Kai-Lin Lee;Hsien-Chang Lin;Chao-Hsien Tu;Chih-Chun Hu;Yeong-Her Wang
義守大學	2007	InGaP/InGaAs MOS-PHEMT with a liquid phase oxidized InGaP gate insulator	Hsien-Chang Lin;Kuan-Wei Lee;Chao-Hsien Tu;Po-Wen Sze;Yeong-Her Wang;

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