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"kumar dayanand"
Showing items 1-8 of 8 (1 Page(s) Totally)
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| 國立交通大學 |
2020-07-01T05:21:14Z |
ZrN-Based Flexible Resistive Switching Memory
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Kumar, Dayanand; Chand, Umesh; Siang, Lew Wen; Tseng, Tseung-Yuen |
| 國立交通大學 |
2020-02-01 |
High-Performance TiN/Al2O3/ZnO/Al2O3/TiN Flexible RRAM Device With High Bending Condition
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Tseng, Tseung-Yuen; Chand, Umesh; Kumar, Dayanand; Siang, Lew Wen |
| 國立交通大學 |
2019-04-02T05:58:58Z |
One Bipolar Selector-One Resistor for Flexible Crossbar Memory Applications
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Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:57:08Z |
High Performance Bipolar Resistive Switching Characteristics in SiO2/ZrO2/SiO2 Tri-layer Based CBRAM Device
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Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:54:05Z |
Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer
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Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:53:36Z |
Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device
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Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:53:18Z |
Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion
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Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2016-03-28T00:04:10Z |
Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture
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Chand, Umesh; Huang, Chun-Yang; Kumar, Dayanand; Tseng, Tseung-Yuen |
Showing items 1-8 of 8 (1 Page(s) Totally)
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