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Showing items 31-45 of 45  (1 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:13:59Z High-performance In0.52Al0.48As/In0.6Ga0.4As power metamorphic high electron mobility transistor for Ka-band applications Chang, Chia-Yuan; Chang, Edward Yi; Lien, Yi-Chung; Miyamoto, Yasuyuki; Kuo, Chien-I; Chen, Szu-Hung; Chu, Li-Hsin
國立交通大學 2014-12-08T15:13:18Z Investigation of impact ionization in InAs-channel HEMT ford high-speed and low-power applications Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Kuo, Chien-I; Datta, Suman; Radosavljevic, Marko; Miyamoto, Yasuyuki; Huang, Guo-Wei
國立交通大學 2014-12-08T15:12:52Z InAs channel-based quantum well transistors for high-speed and low-voltage digital applications Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi
國立交通大學 2014-12-08T15:12:22Z RF and logic performance improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel HEMT using gate-sinking technology Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Chang, Chia-Yuan; Miyamoto, Yasuyuki; Datta, Suman; Radosavljevic, Marko; Huang, Guo-Wei; Lee, Ching-Ting
國立交通大學 2014-12-08T15:10:58Z InAs high electron mobility transistors with buried gate for ultralow-power-consumption low-noise amplifier application Kuo, Chien-I; Hsu, Hen-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung
國立交通大學 2014-12-08T15:07:59Z DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source-Drain Spacing Technology Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki; Wu, Chien-Ying; Chen, Yu-Lin; Hsiao, Yu-Lin
國立交通大學 2014-12-08T15:07:38Z Evaluation of RF and logic performance for 80 nm InAs/InGaAs composite channel HEMTs using gate sinking technology Kuo, Chien-I; Hsu, Heng-Tung; Chang, Chia-Yuan; Chang, Edward Yi; Hsu, Heng-Shou
國立交通大學 2014-12-08T15:07:28Z 30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs Chang, Chia-Ta; Hsu, Heng-Tung; Chang, Edward Yi; Kuo, Chien-I; Huang, Jui-Chien; Lu, Chung-Yu; Miyamoto, Yasuyuki
國立交通大學 2014-12-08T15:06:39Z RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications Kuo, Chien-I; Hsu, Heng-Tung; Chen, Yu-Lin; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung; Sahoo, Kartik Chandra
國立交通大學 2014-12-08T15:03:46Z Investigation of Impact Ionization from In(x)Ga(1-x)As to InAs Channel HEMTs for High Speed and Low Power Applications Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Chang, Chia-Ta; Chang, Chia-Yuan; Miyamoto, Yasuyuki
國立交通大學 2014-12-08T15:03:41Z InAs/In(1-x)Ga(x)As Composite Channel High Electron Mobility Transistors for High Speed Applications Chang, Edward Yi; Kuo, Chien-I; Hsu, Heng-Tung; Chang, Chia-Yuan
國立交通大學 2014-12-08T15:01:35Z Evaluation of RF and Logic Performance for 40 nm InAs/InGaAs Composite Channel HEMTs for high-speed and low-voltage applications Wu, Chien-Ying; Hsu, Heng-Tung; Kuo, Chien-I; Chang, Edward Yi; Chen, Yu-lin
國立交通大學 2014-12-08T15:01:24Z An AlGaAs/InGaAs HEMT Grown on Si Substrate with Ge/GexSi1-x Metamorphic Buffer Layers Chang, Edward Yi; Lin, Yueh-Chin; Hsiao, Yu-Lin; Hsieh, Y. C.; Chang, Chia-Yuan; Kuo, Chien-I; Luo, Guang-Li
淡江大學 2009 非優勢排序遺傳演算法於多水庫系統颱洪操作之規劃 郭鑑儀; Kuo, Chien-i
國立成功大學 2008-04 RF and logic performance improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel HEMT using gate-sinking technology Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Chang, Chia-Yuan; Miyamoto, Yasuyuki; Datta, Suman; Radosavljevic, Marko; Huang, Guo-Wei; Lee, Ching-Ting

Showing items 31-45 of 45  (1 Page(s) Totally)
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