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"kuo chien i"的相關文件
顯示項目 21-45 / 45 (共2頁)
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| 國立交通大學 |
2014-12-08T15:29:06Z |
Flip-Chip Packaging of In0.6Ga0.4As MHEMT Device on Low-Cost Organic Substrate for W-Band Applications
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Lim, Wee Chin; Wang, Chin-Te; Kuo, Chien-I; Hsu, Li-Han; Tsai, Szu-Ping; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:28:33Z |
Bias-Dependent Radio Frequency Performance for 40nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600GHz
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Fatah, Faiz; Kuo, Chien-I; Hsu, Heng-Tung; Chiang, Che-Yang; Hsu, Ching-Yi; Miyamoto, Yasuyuki; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:28:08Z |
The Circle-grid Electrode on Concentrated GaAs Solar Cells Efficiency
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Chung, Chen-Chen; Yu, Hung-Wei; Hsu, Li-Han; Kuo, Chien-I; Nguyen-Hong Quan; Chiu, Yu-Sheng; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:28:03Z |
C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric
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Tang, Shih Hsuan; Kuo, Chien I.; Hai Dang Trinh; Hudait, Mantu; Chang, Edward Yi; Hsu, Ching Yi; Su, Yung Hsuan; Luo, Guang-Li; Hong Quan Nguyen |
| 國立交通大學 |
2014-12-08T15:27:17Z |
Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate
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Wang, Chin-Te; Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Hsu, Li-Han; Lim, Wee-Chin; Miyamoto, Yasuyuki |
| 國立交通大學 |
2014-12-08T15:25:10Z |
A 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T)
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Kuo, Chien-I; Hsu, Heng-Tung; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Chen, Yu-Lin; Biswas, Dhrubes |
| 國立交通大學 |
2014-12-08T15:23:38Z |
Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching
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Kuo, Chien-I; Hsu, Heng-Tung; Hsu, Ching-Yi; Yu, Chia-Hui; Ho, Han-Chieh; Chang, Edward Yi; Chyi, Jen-Inn |
| 國立交通大學 |
2014-12-08T15:22:03Z |
Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates
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Hsiao, Yu-Lin; Lu, Lung-Chi; Wu, Chia-Hsun; Chang, Edward Yi; Kuo, Chien-I; Maa, Jer-Shen; Lin, Kung-Liang; Luong, Tien-Tung; Huang, Wei-Ching; Chang, Chia-Hua; Dee, Chang Fu; Majlis, Burhanuddin Yeop |
| 國立交通大學 |
2014-12-08T15:20:45Z |
V-Band Flip-Chip Assembled Gain Block Using In(0.6)Ga(0.4)As Metamorphic High-Electron-Mobility Transistor Technology
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Chiang, Che-Yang; Hsu, Heng-Tung; Wang, Chin-Te; Kuo, Chien-I; Hsu, Heng-Shou; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:19:01Z |
A Novel Metamorphic High Electron Mobility Transistors with (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice Channel Layer for Millimeter-Wave Applications
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Kuo, Chien-I; Hsu, Heng-Tung; Lu, Jung-Chi; Chang, Edward Yi; Wu, Chien-Ying; Miyamoto, Yasuyuki; Tsern, Wen-Chung |
| 國立交通大學 |
2014-12-08T15:13:59Z |
High-performance In0.52Al0.48As/In0.6Ga0.4As power metamorphic high electron mobility transistor for Ka-band applications
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Chang, Chia-Yuan; Chang, Edward Yi; Lien, Yi-Chung; Miyamoto, Yasuyuki; Kuo, Chien-I; Chen, Szu-Hung; Chu, Li-Hsin |
| 國立交通大學 |
2014-12-08T15:13:18Z |
Investigation of impact ionization in InAs-channel HEMT ford high-speed and low-power applications
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Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Kuo, Chien-I; Datta, Suman; Radosavljevic, Marko; Miyamoto, Yasuyuki; Huang, Guo-Wei |
| 國立交通大學 |
2014-12-08T15:12:52Z |
InAs channel-based quantum well transistors for high-speed and low-voltage digital applications
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Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:12:22Z |
RF and logic performance improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel HEMT using gate-sinking technology
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Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Chang, Chia-Yuan; Miyamoto, Yasuyuki; Datta, Suman; Radosavljevic, Marko; Huang, Guo-Wei; Lee, Ching-Ting |
| 國立交通大學 |
2014-12-08T15:10:58Z |
InAs high electron mobility transistors with buried gate for ultralow-power-consumption low-noise amplifier application
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Kuo, Chien-I; Hsu, Hen-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung |
| 國立交通大學 |
2014-12-08T15:07:59Z |
DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source-Drain Spacing Technology
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Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki; Wu, Chien-Ying; Chen, Yu-Lin; Hsiao, Yu-Lin |
| 國立交通大學 |
2014-12-08T15:07:38Z |
Evaluation of RF and logic performance for 80 nm InAs/InGaAs composite channel HEMTs using gate sinking technology
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Kuo, Chien-I; Hsu, Heng-Tung; Chang, Chia-Yuan; Chang, Edward Yi; Hsu, Heng-Shou |
| 國立交通大學 |
2014-12-08T15:07:28Z |
30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs
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Chang, Chia-Ta; Hsu, Heng-Tung; Chang, Edward Yi; Kuo, Chien-I; Huang, Jui-Chien; Lu, Chung-Yu; Miyamoto, Yasuyuki |
| 國立交通大學 |
2014-12-08T15:06:39Z |
RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications
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Kuo, Chien-I; Hsu, Heng-Tung; Chen, Yu-Lin; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung; Sahoo, Kartik Chandra |
| 國立交通大學 |
2014-12-08T15:03:46Z |
Investigation of Impact Ionization from In(x)Ga(1-x)As to InAs Channel HEMTs for High Speed and Low Power Applications
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Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Chang, Chia-Ta; Chang, Chia-Yuan; Miyamoto, Yasuyuki |
| 國立交通大學 |
2014-12-08T15:03:41Z |
InAs/In(1-x)Ga(x)As Composite Channel High Electron Mobility Transistors for High Speed Applications
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Chang, Edward Yi; Kuo, Chien-I; Hsu, Heng-Tung; Chang, Chia-Yuan |
| 國立交通大學 |
2014-12-08T15:01:35Z |
Evaluation of RF and Logic Performance for 40 nm InAs/InGaAs Composite Channel HEMTs for high-speed and low-voltage applications
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Wu, Chien-Ying; Hsu, Heng-Tung; Kuo, Chien-I; Chang, Edward Yi; Chen, Yu-lin |
| 國立交通大學 |
2014-12-08T15:01:24Z |
An AlGaAs/InGaAs HEMT Grown on Si Substrate with Ge/GexSi1-x Metamorphic Buffer Layers
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Chang, Edward Yi; Lin, Yueh-Chin; Hsiao, Yu-Lin; Hsieh, Y. C.; Chang, Chia-Yuan; Kuo, Chien-I; Luo, Guang-Li |
| 淡江大學 |
2009 |
非優勢排序遺傳演算法於多水庫系統颱洪操作之規劃
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郭鑑儀; Kuo, Chien-i |
| 國立成功大學 |
2008-04 |
RF and logic performance improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel HEMT using gate-sinking technology
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Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Chang, Chia-Yuan; Miyamoto, Yasuyuki; Datta, Suman; Radosavljevic, Marko; Huang, Guo-Wei; Lee, Ching-Ting |
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