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Showing items 106-130 of 216 (9 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:18:15Z |
Low-threshold-current-density, long-wavelength, highly strained InGaAs laser grown by metalorganic chemical vapor deposition
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Chen, IL; Hsu, WC; Kuo, HC; Yu, HC; Sung, CP; Lu, CM; Chiou, CH; Wang, JM; Chang, YH; Lee, TD; Wang, JS |
| 國立交通大學 |
2014-12-08T15:18:11Z |
1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection
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Peng, PC; Chang, YH; Kuo, HC; Tsai, WK; Lin, G; Lin, CT; Yu, HC; Yang, HP; Hsiao, RS; Lin, KF; Chi, JY; Chi, S; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:09Z |
Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening
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Lee, YJ; Kuo, HC; Wang, SC; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:18:06Z |
Effects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-off
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Chu, JT; Kao, CC; Huang, HW; Liang, WD; Chu, CF; Lu, TC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:00Z |
Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy
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Lee, YJ; Tseng, HC; Kuo, HC; Wang, SC; Chang, CW; Hsu, TC; Yang, YL; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:17:46Z |
Growth of highly strained RnGaAs quantum wells by metalorganic chemical vapor deposition with application to vertical-cavity surface-emitting laser
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Chen, IL; Hsu, WC; Lee, TD; Kuo, HC; Su, KH; Chiou, CH; Wang, JM; Chang, YH |
| 國立交通大學 |
2014-12-08T15:17:42Z |
1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
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Yu, HC; Wang, JS; Su, YK; Chang, SJ; Lai, FI; Chang, YH; Kuo, HC; Sung, CP; Yang, HPD; Lin, KF; Wang, JM; Chi, JY; Hsiao, RS; Mikhrin, S |
| 國立交通大學 |
2014-12-08T15:17:41Z |
Theoretical and experimental analysis on InAlGaAs/AlGaAs active region of 850-nm vertical-cavity surface-emitting lasers
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Chang, YA; Chen, JR; Kuo, HC; Kuo, YK; Wang, SC |
| 國立交通大學 |
2014-12-08T15:17:33Z |
Effects of doping concentration and annealing temperature on properties of highly-oriented al-doped ZnO films
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Kuo, SY; Chen, WC; Lai, FI; Cheng, CP; Kuo, HC; Wang, SC; Hsieh, WF |
| 國立交通大學 |
2014-12-08T15:17:32Z |
MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser
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Chang, YA; Chu, JT; Ko, CT; Kuo, HC; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:17:32Z |
Quaternary AlInGaN multiple quantum well 368 nm light-emitting diode
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Wang, TC; Kuo, HC; Lee, ZH; Chuo, CC; Tsai, MY; Tsai, CE; Lee, TD; Lu, TC; Chi, J |
| 國立交通大學 |
2014-12-08T15:17:31Z |
Photoluminescence of plasma enhanced chemical vapor deposition amorphous silicon oxide with silicon nanocrystals grown at different fluence ratios and substrate temperatures
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Lin, CJ; Lin, CK; Chang, CW; Chueh, YL; Kuo, HC; Diau, EWG; Chou, LJ; Lin, GR |
| 國立交通大學 |
2014-12-08T15:17:31Z |
Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser
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Chen, IL; Hsu, WC; Kuo, HC; Sung, CP; Chiou, CH; Wang, JM; Chang, YH; Yu, HC; Lee, TD |
| 國立交通大學 |
2014-12-08T15:17:29Z |
AlGaInP light-emitting diodes with stripe patterned omni-directional reflector
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Lee, YJ; Lu, TC; Kuo, HC; Wang, SC; Liou, MJ; Chang, CW; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:17:29Z |
High brightness AlGaInP-based light emitting diodes by adopting the stripe-patterned omni-directional reflector
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Lee, YJ; Lu, TC; Kuo, HC; Wang, SC; Liou, MJ; Chang, CW; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:17:23Z |
Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor deposition
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Huang, GS; Lu, TC; Yao, HH; Kuo, HC; Wang, SC; Lin, CW; Chang, L |
| 國立交通大學 |
2014-12-08T15:17:16Z |
GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror
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Lee, YJ; Hwang, JM; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ; Lu, TC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:17:16Z |
Single-mode monolithic quantum-dot VCSEL in 1.3 mu m with sidemode suppression ratio over 30 dB
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Chang, YH; Peng, PC; Tsai, WK; Lin, G; Lai, F; Hsiao, RS; Yang, HP; Yu, HC; Lin, KF; Chi, JY; Wang, SC; Kuo, HC |
| 國立交通大學 |
2014-12-08T15:17:16Z |
The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors
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Kao, CC; Lu, TC; Huang, HW; Chu, JT; Peng, YC; Yao, HH; Tsai, JY; Kao, TT; Kuo, HC; Wang, SC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:17:12Z |
Enhanced light output in InGaN-based light-emitting diodes with onmidirectional one-dimensional photonic crystals
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Lin, CH; Tsai, JY; Kao, CC; Kuo, HC; Yu, CC; Lo, JR; Leung, KM |
| 國立交通大學 |
2014-12-08T15:17:03Z |
InGaN self-assembled quantum dots grown by metal-organic chemical vapour deposition with growth interruption
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Yao, HH; Lu, TC; Huang, GS; Chen, CY; Liang, WD; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:17:02Z |
Fabrication and characteristics of GaN-based microcavity light-emitting diodes with high reflectivity AIN/GaN distributed Bragg reflectors
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Peng, YC; Kao, CC; Huang, HW; Chu, JT; Lu, TC; Kuo, HC; Wang, SC; Yu, CC |
| 國立交通大學 |
2014-12-08T15:17:02Z |
Study of InGaN multiple quantum dots by metal organic chemical vapor deposition
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Wang, TC; Kuo, HC; Lu, TC; Tsai, CE; Tsai, MY; Hsu, JT; Yang, JR |
| 國立交通大學 |
2014-12-08T15:16:57Z |
Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces
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Huang, HW; Chu, JT; Kao, CC; Hsueh, TH; Lu, TC; Kuo, HC; Wang, SC; Yu, CC; Kuo, SY |
| 國立交通大學 |
2014-12-08T15:16:57Z |
Ultraviolet lasing of sol-gel-derived zinc oxide polycrystalline films
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Kuo, SY; Lai, FI; Chen, WC; Cheng, CP; Kuo, HC; Wang, SC |
Showing items 106-130 of 216 (9 Page(s) Totally)
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