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Showing items 36-60 of 216 (9 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:40:38Z |
High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs
|
Kuo, HC; Chang, YS; Lai, FY; Hsueh, TH; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:40:18Z |
Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering
|
Lai, FI; Hsueh, TH; Chang, YH; Shu, WC; Lai, LH; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:40:12Z |
High-speed characteristics of large-area single-transverse-mode vertical-cavity surface-emitting lasers
|
Hsueh, TH; Kuo, HC; Lai, FI; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:44Z |
MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength
|
Kuo, HC; Chang, YS; Lin, CF; Lu, TC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:44Z |
Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes
|
Lin, CF; Yao, HH; Lu, JW; Hsieh, YL; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:36Z |
MOCVD growth of AlN/GaN DBR structures under various ambient conditions
|
Yao, HH; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:35Z |
Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition
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Lu, TC; Tsai, JY; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:31Z |
High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers
|
Kuo, HC; Chang, YS; Lai, FY; Hseuh, TH; Chu, LT; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:26Z |
Effect of rapid thermal annealing on beryllium implanted p-type GaN
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Huang, HW; Kao, CC; Tsai, JY; Yu, CC; Chu, CF; Lee, JY; Kuo, SY; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:26Z |
Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching
|
Kao, CC; Huang, HW; Tsai, JY; Yu, CC; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:22Z |
Improvement of high-speed oxide-confined vertical-cavity surface-emitting lasers
|
Yu, HC; Chang, SJ; Su, YK; Sung, CP; Yang, HP; Huang, CY; Lin, YW; Wang, JM; La, FI; Kuo, HC |
| 國立交通大學 |
2014-12-08T15:39:20Z |
Study of GaN light-emitting diodes fabricated by laser lift-off technique
|
Chu, CF; Lai, FI; Chu, JT; Yu, CC; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:09Z |
As+-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformity
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Laih, LH; Kuo, HC; Lin, GR; Laih, LW; Wang, SC |
| 國立交通大學 |
2014-12-08T15:38:53Z |
High-speed (> 10 Gbps) 850 nm oxide-confined vertical cavity surface emitting lasers (VCSELs) with a planar process and reduced parasitic capacitance
|
Chang, YH; Lai, FI; Lu, CY; Kuo, HC; Yu, HC; Sung, CP; Yang, HP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:38:47Z |
10 Gb/s single-mode vertical-cavity surface-emitting laser with large aperture and oxygen implantation
|
Lai, FI; Hsueh, TH; Chang, YH; Kuo, HC; Wang, SC; Laih, LH; Song, CP; Yang, HP |
| 國立交通大學 |
2014-12-08T15:38:42Z |
Pumping intensity dependent surface charge accumulation and redshifted microphotoluminescence of silicon-implanted quartz
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Lin, GR; Yu, KC; Lin, CJ; Kuo, HC; Ou-Yang, MC |
| 國立交通大學 |
2014-12-08T15:37:27Z |
Investigation of GaN LED with Be-implanted Mg-doped GaN layer
|
Huang, HW; Kao, CC; Chu, JT; Kuo, HC; Wang, SC; Yu, CC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:37:26Z |
Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching
|
Huang, HW; Kao, CC; Hsueh, TH; Yu, CC; Lin, CF; Chu, JT; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:22Z |
Simulation of 1300-nm In(0.4)Ga(0.6)As(0.986)N(0.014)/GaAs(1-x)N(x) quantum-well lasers with various GaAs(1-x)N(x) strain compensated barriers
|
Chang, YA; Kuo, HC; Chang, YH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:18Z |
Improvement of kink characteristics performance of GaAsVCSEL with a indium-tin-oxide top transparent overcoating
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Lai, F; Chang, YH; Hsueh, TH; Huang, HW; Laih, LH; Kuo, HC; Wang, SC; Guung, TC |
| 國立交通大學 |
2014-12-08T15:37:15Z |
Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs
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Chang, YH; Kuo, HC; Lai, FI; Chang, YA; Lu, CY; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:11Z |
Spectrally resolved spontaneous emission patterns of oxide-confined vertical-cavity surface-emitting lasers
|
Lu, TC; Hsu, WC; Chang, YS; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:10Z |
MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission
|
Kuo, HC; Yao, HH; Chang, YH; Chang, YA; Tsai, MY; Hsieh, J; Chang, EY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:05Z |
Single-mode 1.27-mu m InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers
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Kuo, HC; Chang, YH; Chang, YA; Lai, FI; Chu, JT; Tsai, MN; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:01Z |
Light-output enhancement in a nitride-based light-emitting diode with 22 degrees undercut sidewalls
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Kao, CC; Kuo, HC; Huang, HW; Chu, JT; Peng, YC; Hsieh, YL; Luo, CY; Wang, SC; Yu, CC; Lin, CF |
Showing items 36-60 of 216 (9 Page(s) Totally)
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