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Showing items 81-105 of 216  (9 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:25:16Z Low-leakage In(0.53)Ga(0.47)As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic In(x)Ga(1-x)P buffer Lin, CK; Kuo, HC; Liao, YS; Lin, GR
國立交通大學 2014-12-08T15:25:14Z 10Gbps operation of a metamorphic InGaP buffered In0.53Ga0.47As p-i-n photodetector grown on GaAs substrate - art. no. 602023 Liao, YS; Lin, GR; Lin, CK; Chu, YS; Kuo, HC; Feng, M
國立交通大學 2014-12-08T15:25:14Z Improved near-infrared luminescence of si-rich SiO2 with buried Si nanocrystals grown by PECVD at optimized N2O fluence Chen, CY; Lin, CJ; Kuo, HC; Lin, GR; Chueh, YL; Chou, LJ; Chang, CW; Diau, EWG
國立交通大學 2014-12-08T15:25:13Z Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off Chu, JT; Liang, WD; Kao, CC; Huang, HW; Chu, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:25:09Z Effects of N2O fluence on the PECVD-grown Si-rich SiOx with buried Si nanocrystals Lin, CJ; Kuo, HC; Chen, CY; Chueh, YL; Chou, LJ; Chang, CW; Diau, EWG; Lin, GR
國立交通大學 2014-12-08T15:25:09Z CO2 laser annealing synthesis of silicon nanocrystals buried in Si-rich SiO2 Lin, CJ; Chueh, YL; Chou, LJ; Kuo, HC; Lin, GR
國立交通大學 2014-12-08T15:19:39Z High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelength Kuo, HC; Chang, YH; Yao, HH; Chang, YA; Lai, FI; Tsai, MY; Wang, SC
國立交通大學 2014-12-08T15:19:30Z Singlemode (SMSR > 40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasers Yang, HPD; Lai, FI; Chang, YH; Yu, HC; Sung, CP; Kuo, HC; Wang, SC; Lin, SY; Chi, JY
國立交通大學 2014-12-08T15:19:28Z Photoluminescence from In0.3Ga0.7N/GaN multiple-quantum-well nanorods Hsueh, TH; Huang, HW; Lai, FI; Sheu, JK; Chang, YH; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:19:24Z Characterization of InGaN/GaN multiple quantum well nanorods fabricated by plasma etching with self-assembled nickel metal nanomasks Hsueh, TH; Huang, HW; Kao, CC; Chang, YH; Ou-Yang, MC; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:19:23Z Fabrication of large-area GaN-based light-emitting diodes on Cu substrate Chu, JT; Huang, HW; Kao, CC; Liang, WD; Lai, FI; Chu, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:19:23Z 10 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengths Chang, YH; Kuo, HC; Chang, YA; Chu, JT; Tsai, MY; Wang, SC
國立交通大學 2014-12-08T15:19:23Z Fabrication and micro-photoluminescence investigation of Mg-doped gallium nitride nanorods Chang, YH; Hsueh, TH; Lai, FI; Chang, CW; Yu, CC; Huang, HW; Lin, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:19:14Z Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface Huang, HW; Kao, CC; Chu, JI; Kuo, HC; Wang, SC; Yu, CC
國立交通大學 2014-12-08T15:19:04Z Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers Chang, YA; Kuo, HC; Lu, CY; Kuo, YK; Wang, SC
國立交通大學 2014-12-08T15:19:01Z Enhancement in light output of InGaN-based microhole array light-emitting diodes Hsueh, TH; Shen, JK; Huang, HW; Chu, JY; Kao, CC; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:19:01Z High speed (> 13 GHz) modulation of 850 nm vertical cavity surface emitting lasers (VCSELs) with tapered oxide confined layer Chang, YH; Kuo, HC; Lai, FI; Tzeng, KF; Yu, HC; Sung, CP; Yang, HP; Wang, SC
國立交通大學 2014-12-08T15:18:58Z Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate Lin, GR; Kuo, HC; Lin, CK; Feng, M
國立交通大學 2014-12-08T15:18:41Z Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layers Lai, FI; Kuo, HC; Chang, YH; Tsai, MY; Chu, CP; Kuo, SY; Wang, SC; Tansu, N; Yeh, JY; Mawst, LJ
國立交通大學 2014-12-08T15:18:38Z Improved photoluminescence of 1.26 mu m InGaAs/GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers Chang, YA; Kuo, HC; Chang, YH; Wang, SC
國立交通大學 2014-12-08T15:18:37Z Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector Kao, CC; Peng, YC; Yao, HH; Tsai, JY; Chang, YH; Chu, JT; Huang, HW; Kao, TT; Lu, TC; Kuo, HC; Wang, SC; Lin, CF
國立交通大學 2014-12-08T15:18:32Z Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface Huang, HW; Chu, JT; Kao, CC; Hseuh, TH; Lu, TC; Kuo, HC; Wang, SC; Yu, CC
國立交通大學 2014-12-08T15:18:22Z Singlemode InAs quantum dot photonic crystal VCSELs Yang, HPD; Chang, YH; Lai, FI; Yu, HC; Hsu, YJ; Lin, G; Hsiao, RS; Kuo, HC; Wang, SC; Chi, JY
國立交通大學 2014-12-08T15:18:22Z Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates Lee, YJ; Hsu, TC; Kuo, HC; Wang, SC; Yang, YL; Yen, SN; Chu, YT; Shen, YJ; Hsieh, MH; Jou, MJ; Lee, BJ
國立交通大學 2014-12-08T15:18:19Z Fabrication and characterization of In(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorods Hsueh, TH; Sheu, JK; Huang, HW; Chang, YH; Ou-Yang, MC; Kuo, HC; Wang, SC

Showing items 81-105 of 216  (9 Page(s) Totally)
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