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机构 日期 题名 作者
國立成功大學 2024-04-1 Impact of Dual-Gate Configuration on the Endurance of Ferroelectric Thin-Film Transistors With Nanosheet Polycrystalline-Silicon Channel Film Ma;William, Cheng-Yu;Su;Chun-Jung;Kao;Kuo-Hsing;Cho;Ta-Chun;Guo;Jing-Qiang;Wu;Cheng-Jun;Wu;Po-Ying;Hung;Jia-Yuan
國立成功大學 2024 Numerical Simulations of Gate-Granularity- Induced Subthreshold Characteristics Deterioration of MOSFETs Magnified at Cryogenic Temperatures Kao;Kuo-Hsing;Wang;Zong-Hong;Pai;Yu-Chia;Cheng;Chen-Chi;Lu;Darsen, Darsen D.;Lee;Wen-Jay;Chen;Nan-Yow
國立成功大學 2023-01-13 Device simulations with A U-Net model predicting physical quantities in two-dimensional landscapes Lee;Wen-Jay;Hsieh;Wu-Tsung;Fang;Bin-Horn;Kao;Kuo-Hsing;Chen;Nan-Yow
國立成功大學 2022-10 Impacts of material parameters on breakdown voltage and location for power MOSFETs Kumar;Kunal;Lo;Chun-Hsiang;Chang;Chun-Chun;Wu;Tian-Li;Kao;Kuo-Hsing;Wang;Yeong-Her
國立成功大學 2021-01 Inherent Dipole Layer Formation Driven by Surface Energy at Nonplanar Dielectric Interface Fang;Yu;Lee;Wen-Jay;Yang;An-Chen;Chen;Guan-Peng;Chen;Nan-Yow;Kao;Kuo-Hsing
國立成功大學 2020- Subthreshold Swing Saturation of Nanoscale MOSFETs Due to Source-to-Drain Tunneling at Cryogenic Temperatures Kao;Kuo-Hsing;Wu;Rang, Tzung;Chen;Hong-Lin;Lee;Wen-Jay;Chen;Nan-Yow;Ma;William, Cheng-Yu;Su;Chun-Jung;Lee;Yao-Jen
國立成功大學 2018-10 Significance of Multivalley and Nonparabolic Band Structure for GeSn TFET Simulation Kumar;Kunal;Hsieh;Yu-Feng;Liao;Jen-Hong;Kao;Kuo-Hsing;Wang;Yeong-Her
國立成功大學 2018-03 An FET With a Source Tunneling Barrier Showing Suppressed Short-Channel Effects for Low-Power Applications Hsieh;Yu-Feng;Chen;Si-Hua;Chen;Nan-Yow;Lee;Wen-Jay;Tsai;Jyun-Hwei;Chen;Chun-Nan;Chiang;Meng-Hsueh;Lu;Darsen, Darsen D.;Kao;Kuo-Hsing
國立成功大學 2017-09 Improving the Electrical Performance of a Quantum Well FET With a Shell Doping Profile by Heterojunction Optimization Kumar;Vijay, Malkundi Puttaveerappa;Hu;Chia-Ying;Walke;Mahadev, Amey;Kao;Kuo-Hsing;Chao;Tien-Sheng
國立成功大學 2017-06 Undoped and Doped Junctionless FETs: Source/Drain Contacts and Immunity to Random Dopant Fluctuation Chen;Liang-Yu;Hsieh;Yu-Feng;Kao;Kuo-Hsing
國立成功大學 2017-01 A Dopingless FET With Metal-Insulator-Semiconductor Contacts Kao;Kuo-Hsing;Chen;Liang-Yu

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