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"kuo j b"的相关文件
显示项目 81-105 / 128 (共6页) << < 1 2 3 4 5 6 > >> 每页显示[10|25|50]项目
臺大學術典藏 |
1994-01 |
Low-voltage BiCMOS dynamic minimum circuit using a parallel comparison algorithm for fuzzy controllers
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Kuo, J.B.; Wang, J.Y.; Chen, Y.G.; Kuo, J.B.; Wang, J.Y.; Chen, Y.G.; KuoJB |
國立臺灣大學 |
1993-11 |
1.5V BiCMOS dynamic multiplier using Wallace tree reduction architecture
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Kuo, J.B.; Su, K.W.; Lou, J.H. |
國立臺灣大學 |
1993-11 |
Amorphous silicon TFT capacitance model using an effective temperature approach
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Kuo, J.B.; Chen, S.S. |
臺大學術典藏 |
1993-11 |
1.5V BiCMOS dynamic multiplier using Wallace tree reduction architecture
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KuoJB; Su, K.W.; Lou, J.H.; Kuo, J.B.; Kuo, J.B.; Su, K.W.; Lou, J.H. |
臺大學術典藏 |
1993-11 |
Amorphous silicon TFT capacitance model using an effective temperature approach
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Kuo, J.B.; Chen, S.S.; Kuo, J.B.; Chen, S.S.; KuoJB |
國立臺灣大學 |
1993-10 |
Saturation region model for a-Si:H TFTs using a quasi-two-dimensional approach
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Kuo, J.B.; Chen, S.S. |
國立臺灣大學 |
1993-10 |
An analytical back gate bias dependent threshold voltage model for SiGe-channel ultra-thin SOI PMOS devices
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Kuo, J.B.; Tang, M.C.; Sim, J.H. |
臺大學術典藏 |
1993-10 |
Saturation region model for a-Si:H TFTs using a quasi-two-dimensional approach
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Kuo, J.B.; Chen, S.S.; Kuo, J.B.; Chen, S.S.; KuoJB |
臺大學術典藏 |
1993-10 |
An analytical back gate bias dependent threshold voltage model for SiGe-channel ultra-thin SOI PMOS devices
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Kuo, J.B.; Tang, M.C.; Sim, J.H.; Kuo, J.B.; Tang, M.C.; Sim, J.H.; KuoJB |
國立臺灣大學 |
1993-08 |
Analytical drain current model for a-Si:H TFTs by simultaneously considering localised deep and tail states
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Kuo, J.B.; Chen, C.S. |
臺大學術典藏 |
1993-08 |
Analytical drain current model for a-Si:H TFTs by simultaneously considering localised deep and tail states
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Kuo, J.B.; Chen, C.S.; Kuo, J.B.; Chen, C.S.; KuoJB |
國立臺灣大學 |
1993-05 |
A BiCMOS dynamic divider circuit using a nonrestoring iterative architecture with carry look ahead for CPU VLSI
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Kuo, J.B.; Chen, H.P.; Huang, H.J. |
國立臺灣大學 |
1993-05 |
Accumulation-type vs. inversion-type of an ultra-thin SIO PMOS device operating at 300 K and 77 K: subthreshold behavior and pull-up switching performance of a CMOS inverter
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Kuo, J.B.; Sim, J.H. |
國立臺灣大學 |
1993-05 |
A coded block neural network system suitable for VLSI implementation using an adaptive learning-rate epoch-based back propagation technique
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Mao, M.W.; Chen, B.Y.; Kuo, J.B. |
臺大學術典藏 |
1993-05 |
A BiCMOS dynamic divider circuit using a nonrestoring iterative architecture with carry look ahead for CPU VLSI
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Kuo, J.B.; Chen, H.P.; Huang, H.J.; Kuo, J.B.; Chen, H.P.; Huang, H.J.; KuoJB |
臺大學術典藏 |
1993-05 |
Accumulation-type vs. inversion-type of an ultra-thin SIO PMOS device operating at 300 K and 77 K: subthreshold behavior and pull-up switching performance of a CMOS inverter
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Kuo, J.B.; Sim, J.H.; Kuo, J.B.; Sim, J.H.; KuoJB |
國立臺灣大學 |
1993-03 |
BiCMOS dynamic minimum circuit using a parallel comparison algorithm for fuzzy controllers
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Chen, S.S.; Chiang, C.S.; Su, K.W.; Kuo, J.B. |
國立臺灣大學 |
1993 |
An Improved Analytical Short-Channel MOSFET Model Valid in All Regions of Operation for Analog/Digital Circuit Si[20642:0:4] 50300022:31:An Improved Analytical Short-Channel MOSFET Model Valid in All Regions of Operation for Analog/Digit
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Chow, H. C.; 馮武雄; Kuo, J. B.; Chow, H. C.; Feng, Wu-Shiung; Kuo, J. B. |
國立臺灣大學 |
1992-10 |
Coded block neural network VLSI system using an adaptive learning-rate technique to train Chinese character patterns
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Chen, B.Y.; Mao, M.W.; Kuo, J.B. |
國立臺灣大學 |
1992-10 |
A BiCMOS dynamic full adder circuit for VLSI implementation of high-speed parallel multipliers using Wallace tree reduction architecture
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Kuo, J.B.; Liao, H.J.; Chen, H.P. |
國立臺灣大學 |
1992-10 |
Delayed-turn-on phenomenon in accumulation-type SOI pMOS device operating at liquid nitrogen temperature
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Kuo, J.B.; Sim, J.H. |
臺大學術典藏 |
1992-10 |
A BiCMOS dynamic full adder circuit for VLSI implementation of high-speed parallel multipliers using Wallace tree reduction architecture
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Kuo, J.B.; Liao, H.J.; Chen, H.P.; Kuo, J.B.; Liao, H.J.; Chen, H.P.; KuoJB |
臺大學術典藏 |
1992-10 |
Delayed-turn-on phenomenon in accumulation-type SOI pMOS device operating at liquid nitrogen temperature
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Kuo, J.B.; Sim, J.H.; Kuo, J.B.; Sim, J.H.; KuoJB |
國立臺灣大學 |
1992-07 |
Simple analytical model for short-channel MOS devices
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Chow, H.-C.; Feng, W.-S.; Kuo, J.B. |
國立臺灣大學 |
1992-06 |
BiCMOS dynamic full adder circuit for high-speed parallel multipliers
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Chen, H.P.; Liao, H.J.; Kuo, J.B. |
显示项目 81-105 / 128 (共6页) << < 1 2 3 4 5 6 > >> 每页显示[10|25|50]项目
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