臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
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Showing items 46-70 of 128 (6 Page(s) Totally)
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Institution	Date	Title	Author
國立臺灣大學	2000	A Closed-Form Back-Gate-Bias Related Inverse Narrow-Channel Effect Model for Deep-Submicron VLSI CMOS Devices Using Shallow Trench Isolation	Lin, Shih-Chia; Kuo, J.B.; Huang, Kuo-Tai; Sun, Shih-Wei
國立臺灣大學	2000	A High-Speed Conditional Carry Select (CCS) Adder Circuit with a Successively Incremented Carry Number Block (SICNB) Structure for Low-Voltage VLSI Implementation	Huang, Yen-Mou; Kuo, J.B.
國立臺灣大學	1999-10	A novel 0.7 V two-port 6T SRAM memory cell structure with single-bit-line simultaneous read-and-write access (SBLSRWA) capability using partially-depleted SOI CMOS dynamic-threshold technique	Liu, S.C.; Kuo, J.B.
國立臺灣大學	1999	Temperature-dependent kink effect model for partially-depleted SOINMOS devices	Lin, S.C.; Kuo, J.B.
國立臺灣大學	1999	A 1.5-V CMOS all-N-logic true-single-phase bootstrappeddynamic-logic circuit suitable for low supply voltage and high-speedpipelined system operation	Lou, J.H.; Kuo, J.B.
國立臺灣大學	1999	Bandgap Narrowing	Kuo, J. B.
國立臺灣大學	1999	A CMOS Semi-Static Latch Circuit without Charge Sharing and Leakage Current Problems	Lin, P. F.; Kuo, J. B.
國立臺灣大學	1999	A Low-Voltage Semi-Dynamic DCVSPG-Domino Logic Circuit	Lou, J. H.; Kuo, J. B.
國立臺灣大學	1999	Modeling of Deep-Submicron SOI CMOS VLSI Devices	Kuo, J. B.
國立臺灣大學	1998-09	1.5 V CMOS bootstrapped dynamic logic circuit techniques (BDLCT) suitable for low-voltage deep-submicron CMOS VLSI for implementing 482 MHz digital quadrature modulator and adder	Lou, J.H.; Kuo, J.B.
國立臺灣大學	1997-10	Compact current model for mesa-isolated fully-depleted ultrathin SOI NMOS devices considering sidewall-related narrow channel effects	Kuo, J.B.; Su, K.W.
臺大學術典藏	1997-10	Compact current model for mesa-isolated fully-depleted ultrathin SOI NMOS devices considering sidewall-related narrow channel effects	Kuo, J.B.; Su, K.W.; Kuo, J.B.; Su, K.W.; KuoJB
國立臺灣大學	1997-08	A 1.5 V CMOS high-speed 16-bit÷8-bit divider using the quotient-select architecture and true-single-phase bootstrapped dynamic circuit techniques suitable for low-voltage VLSI	Yeh, C.C.; Lou, J.H.; Kuo, J.B.
國立臺灣大學	1997-08	A 1.5 V bootstrapped pass-transistor-based carry look-ahead circuit suitable for low-voltage CMOS VLSI	Lou, J.H.; Kuo, J.B.
國立臺灣大學	1997-07	1.5 V CMOS full-swing energy efficient logic (EEL) circuit suitable for low-voltage and low-power VLSI applications	Yeh, C.C.; Lou, J.H.; Kuo, J.B.
國立臺灣大學	1996-09	Analytical current conduction model for accumulation-mode SOI PMOS devices	Su, K.W.; Kuo, J.B.
國立臺灣大學	1996	A velocity-overshoot capacitance model for 0.1 μm MOS transistors	Kuo, J. B.; Chang, Y. W.; Lai, C. S.
國立臺灣大學	1995-10	SiC vs. Si: two-dimensional analysis of quasi-saturation behavior of DMOS devices operating at elevated temperatures	Chang, Y.W.; Kuo, J.B.
國立臺灣大學	1995-10	An analytical delayed-turn-off model for 6H-SiC buried-channel NMOS devices considering incomplete ionization	Su, K.W.; Kuo, J.B.
國立臺灣大學	1995-10	Accumulation-type vs. inversion-type: narrow channel effect in VLSI mesa-isolated fully-depleted ultra-thin SOI PMOS devices	Su, K.W.; Kuo, J.B.
國立臺灣大學	1995-09	A high-speed 1.5 V clocked BiCMOS latch for BiCMOS dynamic pipelined digital logic VLSI systems	Kuo, J.B.; Lou, J.H.; Su, K.W.
臺大學術典藏	1995-09	A high-speed 1.5 V clocked BiCMOS latch for BiCMOS dynamic pipelined digital logic VLSI systems	Kuo, J.B.; Lou, J.H.; Su, K.W.; Kuo, J.B.; Lou, J.H.; Su, K.W.; KuoJB
國立臺灣大學	1995-05	A closed-form physical back-gate-bias dependent quasi-saturation model for SOI lateral DMOS devices with self-heating for circuit simulation	Liu, C.M.; Shone, F.C.; Kuo, J.B.
國立臺灣大學	1994-12	A 1.5 V 10 MHz BiCMOS quasi-digital vector modulator for wireless communication IC	Su, K.W.; Chen, Y.G.; Lai, C.S.; Kuo, J.B.; Wu, J.S.; Tso, H.W.
國立臺灣大學	1994-10	Back gate bias dependent quasi-saturation in a high-voltage SOI MOSFET: 2D analysis and closed-form analytical model	Liu, C.M.; Kuo, J.B.

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