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"kuojb"的相关文件
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| 臺大學術典藏 |
1993-11 |
1.5V BiCMOS dynamic multiplier using Wallace tree reduction architecture
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KuoJB; Su, K.W.; Lou, J.H.; Kuo, J.B.; Kuo, J.B.; Su, K.W.; Lou, J.H. |
| 臺大學術典藏 |
1993-11 |
Amorphous silicon TFT capacitance model using an effective temperature approach
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Kuo, J.B.; Chen, S.S.; Kuo, J.B.; Chen, S.S.; KuoJB |
| 臺大學術典藏 |
1993-10 |
Saturation region model for a-Si:H TFTs using a quasi-two-dimensional approach
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Kuo, J.B.; Chen, S.S.; Kuo, J.B.; Chen, S.S.; KuoJB |
| 臺大學術典藏 |
1993-10 |
An analytical back gate bias dependent threshold voltage model for SiGe-channel ultra-thin SOI PMOS devices
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Kuo, J.B.; Tang, M.C.; Sim, J.H.; Kuo, J.B.; Tang, M.C.; Sim, J.H.; KuoJB |
| 臺大學術典藏 |
1993-08 |
Analytical drain current model for a-Si:H TFTs by simultaneously considering localised deep and tail states
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Kuo, J.B.; Chen, C.S.; Kuo, J.B.; Chen, C.S.; KuoJB |
| 臺大學術典藏 |
1993-05 |
A BiCMOS dynamic divider circuit using a nonrestoring iterative architecture with carry look ahead for CPU VLSI
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Kuo, J.B.; Chen, H.P.; Huang, H.J.; Kuo, J.B.; Chen, H.P.; Huang, H.J.; KuoJB |
| 臺大學術典藏 |
1993-05 |
Accumulation-type vs. inversion-type of an ultra-thin SIO PMOS device operating at 300 K and 77 K: subthreshold behavior and pull-up switching performance of a CMOS inverter
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Kuo, J.B.; Sim, J.H.; Kuo, J.B.; Sim, J.H.; KuoJB |
| 臺大學術典藏 |
1992-10 |
A BiCMOS dynamic full adder circuit for VLSI implementation of high-speed parallel multipliers using Wallace tree reduction architecture
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Kuo, J.B.; Liao, H.J.; Chen, H.P.; Kuo, J.B.; Liao, H.J.; Chen, H.P.; KuoJB |
| 臺大學術典藏 |
1992-10 |
Delayed-turn-on phenomenon in accumulation-type SOI pMOS device operating at liquid nitrogen temperature
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Kuo, J.B.; Sim, J.H.; Kuo, J.B.; Sim, J.H.; KuoJB |
| 臺大學術典藏 |
1992-06 |
A radical-partitioned coded block adaptive neural network structure for large-volume Chinese characters recognition
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Kuo, J.B.; Mao, M.W.; Kuo, J.B.; Mao, M.W.; KuoJB |
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