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Institution Date Title Author
國立交通大學 2017-04-21T06:49:01Z Improvement of Oxide Reliability in NAND Flash Memories Using Tight Endurance Cycling with Shorter Idling Period Shirota, R.; Yang, B-J.; Chiu, Y-Y.; Wu, Y-T.; Wang, P-Y.; Chang, J-H.; Yano, M.; Aoki, M.; Takeshita, T.; Wang, C-Y.; Kurachi, I.
國立交通大學 2015-07-21T08:31:13Z New Accurate Method to Analyze both Floating Gate Charge and Tunnel Oxide Trapped Charge Profile in NAND Flash Memory Shirota, R.; Yang, B-J.; Chiu, Y-Y; Chen, H-T.; Ng, S-F.; Wang, P-Y.; Chang, J-H.; Kurachi, I.

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