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Showing items 136-145 of 563 (57 Page(s) Totally)
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| 臺大學術典藏 |
2019-12-27T07:49:27Z |
Direct measurement of interfacial structure in epitaxial Gd 2O3 on GaAs (0 0 1) using scanning tunneling microscopy
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Shen, J.Y.; Huang, M.L.; Lee, W.C.; Chang, P.; Chiang, T.H.; Hong, M.; Kwo, J.; MINGHWEI HONG; Huang, B.C.; Chiu, Y.P.; Shih, M.C.; Chiu, Y.P.;Shih, M.C.;Huang, B.C.;Shen, J.Y.;Huang, M.L.;Lee, W.C.;Chang, P.;Chiang, T.H.;Hong, M.;Kwo, J. |
| 臺大學術典藏 |
2019-12-27T07:49:27Z |
MBE - Enabling technology beyond Si CMOS
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Chang, P.;Lee, W.C.;Lin, T.D.;Hsu, C.H.;Kwo, J.;Hong, M.; Chang, P.; Lee, W.C.; Lin, T.D.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:25Z |
Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy
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Chiu, Y.P.;Huang, B.C.;Shih, M.C.;Shen, J.Y.;Chang, P.;Chang, C.S.;Huang, M.L.;Tsai, M.-H.;Hong, M.;Kwo, J.; Chiu, Y.P.; Huang, B.C.; Shih, M.C.; Shen, J.Y.; Chang, P.; Chang, C.S.; Huang, M.L.; Tsai, M.-H.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:25Z |
Self-aligned inversion-channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as gate dielectrics
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Chang, P.;Chiu, H.-C.;Lin, T.-D.;Huang, M.-L.;Wen-Hsin Chang;Wu, S.-Y.;Wu, K.-H.;Hong, M.;Kwo, J.; Chang, P.; Chiu, H.-C.; Lin, T.-D.; Huang, M.-L.; Wen-Hsin Chang, Wu, S.-Y.; Wu, K.-H.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:25Z |
Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
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Merckling, C.;Chang, Y.C.;Lu, C.Y.;Penaud, J.;Brammertz, G.;Scarrozza, M.;Pourtois, G.;Kwo, J.;Hong, M.;Dekoster, J.;Meuris, M.;Heyns, M.;Caymax, M.; Merckling, C.; Chang, Y.C.; Lu, C.Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:25Z |
Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics
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Chu, L.K.;Merckling, C.;Alian, A.;Dekoster, J.;Kwo, J.;Hong, M.;Caymax, M.;Heyns, M.; Chu, L.K.; Merckling, C.; Alian, A.; Dekoster, J.; Kwo, J.; Hong, M.; Caymax, M.; Heyns, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:24Z |
Surface-atom core-level shift in GaAs(111)A-2
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MINGHWEI HONG; Kwo, J.; Hong, M.; Wertheim, G.K.; Chiang, T.-H.; Huang, M.-L.; Chen, B.-R.; Pi, T.-W. |
| 臺大學術典藏 |
2019-12-27T07:49:24Z |
Realization of high-quality HfO 2 on In 0.53Ga 0.47As by in-situ atomic-layer-deposition
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Lin, T.D.; Chang, Y.H.; Lin, C.A.; Huang, M.L.; Lee, W.C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:24Z |
The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a 帠-Al 2O 3 buffer layer
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Liu, W.-R.;Lin, B.H.;Yang, S.;Kuo, C.C.;Li, Y.-H.;Hsu, C.-H.;Hsieh, W.F.;Lee, W.C.;Hong, M.;Kwo, J.; Liu, W.-R.; Lin, B.H.; Yang, S.; Kuo, C.C.; Li, Y.-H.; Hsu, C.-H.; Hsieh, W.F.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:23Z |
Growth mechanism of atomic layer deposited Al2O3on GaAs(001)-4 ? 6 surface with trimethylaluminum and water as precursors
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Huang, M.L.; Chang, Y.H.; Lin, T.D.; Lin, H.Y.; Liu, Y.T.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG |
Showing items 136-145 of 563 (57 Page(s) Totally)
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