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Taiwan Academic Institutional Repository >
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"kwo j"
Showing items 151-160 of 563 (57 Page(s) Totally)
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| 臺大學術典藏 |
2019-12-27T07:49:22Z |
Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect- transistors using molecular beam deposited Al2O3as a gate dielectric on different reconstructed surfaces
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Chang, Y.C.;Chang, W.H.;Merckling, C.;Kwo, J.;Hong, M.; Chang, Y.C.; Chang, W.H.; Merckling, C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:22Z |
Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y2O3-buffered Si (111)
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Kuo, C.C.;Liu, W.-R.;Lin, B.H.;Hsieh, W.F.;Hsu, C.-H.;Lee, W.C.;Hong, M.;Kwo, J.; Kuo, C.C.; Liu, W.-R.; Lin, B.H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:21Z |
High-performance self-aligned inversion-channel In0.53Ga 0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2
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Lin, T.D.;Chang, W.H.;Chu, R.L.;Chang, Y.C.;Chang, Y.H.;Lee, M.Y.;Hong, P.F.;Chen, M.-C.;Kwo, J.;Hong, M.; Lin, T.D.; Chang, W.H.; Chu, R.L.; Chang, Y.C.; Chang, Y.H.; Lee, M.Y.; Hong, P.F.; Chen, M.-C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:21Z |
Interfacial electronic structure of trimethyl-aluminum and water on an In0.20Ga0.80As(001)-4 ? 2 surface: A high-resolution core-level photoemission study
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Pi, T.W.;Lin, H.Y.;Chiang, T.H.;Liu, Y.T.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.W.; Lin, H.Y.; Chiang, T.H.; Liu, Y.T.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:21Z |
Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs (001)-4 ? 6 and As-rich GaAs(001)-2 ? 4 surfaces: A synchrotron radiation photoemission study
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Pi, T.-W.;Lin, H.-Y.;Liu, Y.-T.;Lin, T.-D.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.-W.; Lin, H.-Y.; Liu, Y.-T.; Lin, T.-D.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:20Z |
Greatly improved interfacial passivation of in-situ high 庥 dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)
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Chu, R.L.;Liu, Y.C.;Lee, W.C.;Lin, T.D.;Huang, M.L.;Pi, T.W.;Kwo, J.;Hong, M.; Chu, R.L.; Liu, Y.C.; Lee, W.C.; Lin, T.D.; Huang, M.L.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:20Z |
Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0.53Ga0.47As(001)-4 ? 2 from atomic layer deposition
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Pi, T.W.;Lin, T.D.;Lin, H.Y.;Chang, Y.C.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.W.; Lin, T.D.; Lin, H.Y.; Chang, Y.C.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:20Z |
High 庥/InGaAs for ultimate CMOS - Interfacial passivation, low ohmic contacts, and device performance (Invited)
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Chang, W.H.;Lin, T.D.;Liao, M.H.;Pi, T.W.;Kwo, J.;Hong, M.; Chang, W.H.; Lin, T.D.; Liao, M.H.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:19Z |
Single-Crystal Y 2 O 3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition
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Lin, Y.H.;Cheng, C.K.;Chen, K.H.;Fu, C.H.;Chang, T.W.;Hsu, C.H.;Kwo, J.;Hong, M.; Lin, Y.H.; Cheng, C.K.; Chen, K.H.; Fu, C.H.; Chang, T.W.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:19Z |
Passivation of GaSb using molecular beam epitaxy Y 2 O 3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors
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Chu, R.L.;Chiang, T.H.;Hsueh, W.J.;Chen, K.H.;Lin, K.Y.;Brown, G.J.;Chyi, J.I.;Kwo, J.;Hong, M.; Chu, R.L.; Chiang, T.H.; Hsueh, W.J.; Chen, K.H.; Lin, K.Y.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG |
Showing items 151-160 of 563 (57 Page(s) Totally)
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