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| 臺大學術典藏 |
2019-12-27T07:49:22Z |
Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect- transistors using molecular beam deposited Al2O3as a gate dielectric on different reconstructed surfaces
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Chang, Y.C.;Chang, W.H.;Merckling, C.;Kwo, J.;Hong, M.; Chang, Y.C.; Chang, W.H.; Merckling, C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:22Z |
Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y2O3-buffered Si (111)
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Kuo, C.C.;Liu, W.-R.;Lin, B.H.;Hsieh, W.F.;Hsu, C.-H.;Lee, W.C.;Hong, M.;Kwo, J.; Kuo, C.C.; Liu, W.-R.; Lin, B.H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:21Z |
High-performance self-aligned inversion-channel In0.53Ga 0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2
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Lin, T.D.;Chang, W.H.;Chu, R.L.;Chang, Y.C.;Chang, Y.H.;Lee, M.Y.;Hong, P.F.;Chen, M.-C.;Kwo, J.;Hong, M.; Lin, T.D.; Chang, W.H.; Chu, R.L.; Chang, Y.C.; Chang, Y.H.; Lee, M.Y.; Hong, P.F.; Chen, M.-C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:21Z |
Interfacial electronic structure of trimethyl-aluminum and water on an In0.20Ga0.80As(001)-4 ? 2 surface: A high-resolution core-level photoemission study
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Pi, T.W.;Lin, H.Y.;Chiang, T.H.;Liu, Y.T.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.W.; Lin, H.Y.; Chiang, T.H.; Liu, Y.T.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:21Z |
Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs (001)-4 ? 6 and As-rich GaAs(001)-2 ? 4 surfaces: A synchrotron radiation photoemission study
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Pi, T.-W.;Lin, H.-Y.;Liu, Y.-T.;Lin, T.-D.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.-W.; Lin, H.-Y.; Liu, Y.-T.; Lin, T.-D.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:20Z |
Greatly improved interfacial passivation of in-situ high 庥 dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)
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Chu, R.L.;Liu, Y.C.;Lee, W.C.;Lin, T.D.;Huang, M.L.;Pi, T.W.;Kwo, J.;Hong, M.; Chu, R.L.; Liu, Y.C.; Lee, W.C.; Lin, T.D.; Huang, M.L.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:20Z |
Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0.53Ga0.47As(001)-4 ? 2 from atomic layer deposition
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Pi, T.W.;Lin, T.D.;Lin, H.Y.;Chang, Y.C.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.W.; Lin, T.D.; Lin, H.Y.; Chang, Y.C.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:20Z |
High 庥/InGaAs for ultimate CMOS - Interfacial passivation, low ohmic contacts, and device performance (Invited)
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Chang, W.H.;Lin, T.D.;Liao, M.H.;Pi, T.W.;Kwo, J.;Hong, M.; Chang, W.H.; Lin, T.D.; Liao, M.H.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:19Z |
Single-Crystal Y 2 O 3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition
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Lin, Y.H.;Cheng, C.K.;Chen, K.H.;Fu, C.H.;Chang, T.W.;Hsu, C.H.;Kwo, J.;Hong, M.; Lin, Y.H.; Cheng, C.K.; Chen, K.H.; Fu, C.H.; Chang, T.W.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:19Z |
Passivation of GaSb using molecular beam epitaxy Y 2 O 3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors
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Chu, R.L.;Chiang, T.H.;Hsueh, W.J.;Chen, K.H.;Lin, K.Y.;Brown, G.J.;Chyi, J.I.;Kwo, J.;Hong, M.; Chu, R.L.; Chiang, T.H.; Hsueh, W.J.; Chen, K.H.; Lin, K.Y.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:19Z |
Observation of strongly enhanced inverse spin Hall voltage in Fe 3 Si/GaAs structures
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Hung, H.Y.;Chiang, T.H.;Syu, B.Z.;Fanchiang, Y.T.;Lin, J.G.;Lee, S.F.;Hong, M.;Kwo, J.; Hung, H.Y.; Chiang, T.H.; Syu, B.Z.; Fanchiang, Y.T.; Lin, J.G.; Lee, S.F.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:19Z |
Single crystal Gd2O3 epitaxially on GaAs(111)A
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Chiang, T.-H.;Wu, S.-Y.;Huang, T.-S.;Hsu, C.-H.;Kwo, J.;Hong, M.; Chiang, T.-H.; Wu, S.-Y.; Huang, T.-S.; Hsu, C.-H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:18Z |
Single-crystal atomic layer deposited Y<inf>2</inf>O<inf>3</inf> on GaAs(0 0 1) - Growth, structural, and electrical characterization
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Wu, S.Y.;Chen, K.H.;Lin, Y.H.;Cheng, C.K.;Hsu, C.H.;Kwo, J.;Hong, M.; Wu, S.Y.; Chen, K.H.; Lin, Y.H.; Cheng, C.K.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:18Z |
Epitaxial ferromagnetic Fe<inf>3</inf>Si on GaAs(111)A with atomically smooth surface and interface
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Liu, Y.C.;Chen, Y.W.;Tseng, S.C.;Chang, M.T.;Lo, S.C.;Lin, Y.H.;Cheng, C.K.;Hung, H.Y.;Hsu, C.H.;Kwo, J.;Hong, M.; Liu, Y.C.; Chen, Y.W.; Tseng, S.C.; Chang, M.T.; Lo, S.C.; Lin, Y.H.; Cheng, C.K.; Hung, H.Y.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:18Z |
Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high 庥 gate dielectric using a CMOS compatible process
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Fu, C.H.;Lin, Y.H.;Lee, W.C.;Lin, T.D.;Chu, R.L.;Chu, L.K.;Chang, P.;Chen, M.H.;Hsueh, W.J.;Chen, S.H.;Brown, G.J.;Chyi, J.I.;Kwo, J.;Hong, M.; Fu, C.H.; Lin, Y.H.; Lee, W.C.; Lin, T.D.; Chu, R.L.; Chu, L.K.; Chang, P.; Chen, M.H.; Hsueh, W.J.; Chen, S.H.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:18Z |
In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: Electronic and electric structures
|
Pi, T.W.;Lin, Y.H.;Fanchiang, Y.T.;Chiang, T.H.;Wei, C.H.;Lin, Y.C.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.W.; Lin, Y.H.; Fanchiang, Y.T.; Chiang, T.H.; Wei, C.H.; Lin, Y.C.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:17Z |
Demonstration of large field effect in topological insulator films via a high-庥 back gate
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Wang, C.Y.;Lin, H.Y.;Yang, S.R.;Chen, K.H.M.;Lin, Y.H.;Chen, K.H.;Young, L.B.;Cheng, C.K.;Fanchiang, Y.T.;Tseng, S.C.;Hong, M.;Kwo, J.; Wang, C.Y.; Lin, H.Y.; Yang, S.R.; Chen, K.H.M.; Lin, Y.H.; Chen, K.H.; Young, L.B.; Cheng, C.K.; Fanchiang, Y.T.; Tseng, S.C.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A and (001) using atomic layer deposition
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Cheng, C.K.;Young, L.B.;Lin, K.Y.;Lin, Y.H.;Wan, H.W.;Lu, G.J.;Chang, M.T.;Cai, R.F.;Lo, S.C.;Li, M.Y.;Hsu, C.H.;Kwo, J.;Hong, M.; Cheng, C.K.; Young, L.B.; Lin, K.Y.; Lin, Y.H.; Wan, H.W.; Lu, G.J.; Chang, M.T.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance
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Pi, T.W.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Wei, G.J.; Lin, K.Y.; Cheng, C.-P.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2???4 interface: An in-situ synchrotron radiation photoemission study
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Cheng, C.-P.; Chen, W.-S.; Lin, K.-Y.; Wei, G.-J.; Cheng, Y.-T.; Lin, Y.-H.; Wan, H.-W.; Pi, T.-W.; Tung, R.T.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A
|
Young, L.B.;Cheng, C.-K.;Lu, G.-J.;Lin, K.-Y.;Lin, Y.-H.;Wan, H.-W.;Li, M.-Y.;Cai, R.-F.;Lo, S.-C.;Hsu, C.-H.;Kwo, J.;Hong, M.; Young, L.B.; Cheng, C.-K.; Lu, G.-J.; Lin, K.-Y.; Lin, Y.-H.; Wan, H.-W.; Li, M.-Y.; Cai, R.-F.; Lo, S.-C.; Hsu, C.-H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Van der Waals epitaxy of topological insulator Bi2Se3 on single layer transition metal dichalcogenide MoS2
|
Chen, K.H.M.; Lin, H.Y.; Yang, S.R.; Cheng, C.K.; Zhang, X.Q.; Cheng, C.M.; Lee, S.F.; Hsu, C.H.; Lee, Y.H.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Surface electronic structure of epi germanium (001)-2 ? 1
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Cheng, Y.-T.; Lin, Y.-H.; Chen, W.-S.; Lin, K.-Y.; Wan, H.-W.; Cheng, C.-P.; Cheng, H.-H.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Analysis of border and interfacial traps in ALD-Y2O3 and -Al2O3 on GaAs via electrical responses - A comparative study
|
Chang, T.W.; Lin, K.Y.; Lin, Y.H.; Young, L.B.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs(001) interface
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Wan, H.W.; Lin, Y.H.; Lin, K.Y.; Chang, T.W.; Cai, R.F.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y 2 O 3 /Al 2 O 3 on GaAs(001)
|
Lin, K.Y.;Young, L.B.;Cheng, C.K.;Chen, K.H.;Lin, Y.H.;Wan, H.W.;Cai, R.F.;Lo, S.C.;Li, M.Y.;Kwo, J.;Hong, M.; Lin, K.Y.; Young, L.B.; Cheng, C.K.; Chen, K.H.; Lin, Y.H.; Wan, H.W.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition
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Lin, Y.H.; Lin, K.Y.; Hsueh, W.J.; Young, L.B.; Chang, T.W.; Chyi, J.I.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 ??In comparison with atomic layer deposited Al2O3
|
Wan, H.W.;Lin, K.Y.;Cheng, C.K.;Su, Y.K.;Lee, W.C.;Hsu, C.H.;Pi, T.W.;Kwo, J.;Hong, M.; Wan, H.W.; Lin, K.Y.; Cheng, C.K.; Su, Y.K.; Lee, W.C.; Hsu, C.H.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition
|
Hong, M.; Wan, H.W.; Lin, K.Y.; Chang, Y.C.; Chen, M.H.; Lin, Y.H.; Lin, T.D.; Pi, T.W.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:13Z |
High-quality single-crystal thulium iron garnet films with perpendicular magnetic anisotropy by off-axis sputtering
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Wu, C.N.;Tseng, C.C.;Lin, K.Y.;Cheng, C.K.;Yeh, S.L.;Fanchiang, Y.T.;Hong, M.;Kwo, J.; Wu, C.N.; Tseng, C.C.; Lin, K.Y.; Cheng, C.K.; Yeh, S.L.; Fanchiang, Y.T.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:12Z |
Topological insulator Bi 2 Se 3 films on rare earth iron garnets and their high-quality interfaces
|
Chen, C.C.;Chen, K.H.M.;Fanchiang, Y.T.;Tseng, C.C.;Yang, S.R.;Wu, C.N.;Guo, M.X.;Cheng, C.K.;Huang, S.W.;Lin, K.Y.;Wu, C.T.;Hong, M.;Kwo, J.; Chen, C.C.; Chen, K.H.M.; Fanchiang, Y.T.; Tseng, C.C.; Yang, S.R.; Wu, C.N.; Guo, M.X.; Cheng, C.K.; Huang, S.W.; Lin, K.Y.; Wu, C.T.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:11Z |
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
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MINGHWEI HONG; Hong, M.; Cheng, C.P.; Pi, T.W.; Kwo, J.; Lin, K.Y.;Wan, H.W.;Chen, K.H.M.;Fanchiang, Y.T.;Chen, W.S.;Lin, Y.H.;Cheng, Y.T.;Chen, C.C.;Lin, H.Y.;Young, L.B.;Cheng, C.P.;Pi, T.W.;Kwo, J.;Hong, M.; Lin, K.Y.; Wan, H.W.; Chen, K.H.M.; Fanchiang, Y.T.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Chen, C.C.; Lin, H.Y.; Young, L.B. |
| 臺大學術典藏 |
2019-12-27T01:15:17Z |
Magnetization reversal processes of epitaxial Fe3Si films on GaAs(001)
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Liu, Y.C.;Chang, P.;Huang, S.Y.;Chang, L.J.;Lin, W.C.;Lee, S.F.;Hong, M.;Kwo, J.; Liu, Y.C.; Chang, P.; Huang, S.Y.; Chang, L.J.; Lin, W.C.; Lee, S.F.; Hong, M.; Kwo, J.; SSU-YEN HUANG |
| 臺大學術典藏 |
2019-12-27T01:15:16Z |
Ferromagnetism in cluster free, transition metal doped high κ dilute magnetic oxides: Films and nanocrystals
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Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; Hong, M.; Kwo, J.; SSU-YEN HUANG; Wu, C.N.; Wu, T.S.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; Hong, M.; Kwo, J.; Wu, C.N.; Wu, T.S. |
| 臺大學術典藏 |
2019-12-19T08:38:44Z |
Spin Pumping Induced Inverse Spin-Hall Effects in La0.7Sr0.3MnO3/Platinum Bilayer Film
|
Kwo, J.; Lee, S. F.; Chang, C. R.; Lin, J. G.; CHING-RAY CHANG; Chiu, Y. C.; Hung, H. Y.; Song, M. Y.; Luo, G. Y.; CHING-RAY CHANG;Lin, J. G.;Chang, C. R.;Lee, S. F.;Kwo, J.;Chiu, Y. C.;Hung, H. Y.;Song, M. Y.;Luo, G. Y. |
| 國立交通大學 |
2019-04-02T06:00:59Z |
Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y2O3 Buffer Layer on Si (111)
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Liu, W. -R.; Li, Y. -H.; Hsieh, W. F.; Hsu, C. -H.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J. |
| 國立交通大學 |
2019-04-02T05:59:51Z |
H2S molecular beam passivation of Ge(001)
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Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; Brammertz, G.; Hong, M.; Kwo, J.; Meuris, M.; Dekoster, J.; Heyns, M. M.; Caymax, M. |
| 國立交通大學 |
2019-04-02T05:59:42Z |
Structural Characteristics of Nanometer Thick Gd2O3 Films Grown on GaN (0001)
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Chang, W. H.; Chang, P.; Lai, T. Y.; Lee, Y. J.; Kwo, J.; Hsu, C-H; Hong, M. |
| 國立交通大學 |
2019-04-02T05:59:00Z |
Al2O3/Ga2O3(Gd2O3) passivation on In0.20Ga0.80As/GaAs-structural intactness with high-temperature annealing
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Lee, Y. J.; Lee, C. H.; Tung, L. T.; Chiang, T. H.; Lai, T. Y.; Kwo, J.; Hsu, C-H; Hong, M. |
| 國立交通大學 |
2019-04-02T05:58:57Z |
Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
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Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M. |
| 國立交通大學 |
2019-04-02T05:58:53Z |
The Growth of an Epitaxial ZnO Film on Si(111) with a Gd2O3(Ga2O3) Buffer Layer
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Lin, B. H.; Liu, W. R.; Yang, S.; Kuo, C. C.; Hsu, C. -H.; Hsieh, W. F.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J. |
| 國立交通大學 |
2019-04-02T05:58:53Z |
Epitaxial stabilization of a monoclinic phase in Y2O3 films on c-plane GaN
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Chang, W. H.; Chang, P.; Lee, W. C.; Lai, T. Y.; Kwo, J.; Hsu, C. -H.; Hong, J. M.; Hong, M. |
| 臺大學術典藏 |
2019-03-11T08:01:10Z |
High κ/InGaAs for ultimate CMOS - Interfacial passivation, low ohmic contacts, and device performance (Invited)
|
Hong, M.;Kwo, J.;Pi, T.W.;Lin, T.D.;Chang, W.H.;Liao, M.H.; Chang, W.H.; Lin, T.D.; Liao, M.H.; Pi, T.W.; Kwo, J.; Hong, M. |
| 臺大學術典藏 |
2018-09-10T15:32:24Z |
Detection of topological surface states by spin pumping at room temperature
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Fanchiang, YT;Cheng, CK;Hong, M;Lin, HY;Chen, KH;Yang, SR;Wu, CN;Kwo, J;Lee, SF; Fanchiang, YT; Cheng, CK; Hong, M; Lin, HY; Chen, KH; Yang, SR; Wu, CN; Kwo, J; Lee, SF; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:32:24Z |
High quality topological insulator thin films grown by molecular beam epitaxy using MoS2 monolayer as buffer layer
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Chen, KH;Lin, HY;Wang, CY;Yang, SR;Kwo, J;Cheng, CK;Hong, M;Zhang, XQ;Lee, YH; Chen, KH; Lin, HY; Wang, CY; Yang, SR; Kwo, J; Cheng, CK; Hong, M; Zhang, XQ; Lee, YH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping
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Wu, CN;Lin, YH;Fanchiang, YT;Hung, HY;Lin, HY;Lin, PH;Lin, JG;Lee, SF;Hong, M;Kwo, J; Wu, CN; Lin, YH; Fanchiang, YT; Hung, HY; Lin, HY; Lin, PH; Lin, JG; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In) GaAs surfaces: electronic and electric structures
|
Pi, TW;Lin, YH;Fanchiang, YT;Chiang, TH;Wei, CH;Lin, YC;Wertheim, GK;Kwo, J;Hong, M; Pi, TW; Lin, YH; Fanchiang, YT; Chiang, TH; Wei, CH; Lin, YC; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
Single-crystal atomic layer deposited Y 2 O 3 on GaAs (001)-growth, structural, and electrical characterization
|
Wu, SY;Chen, KH;Lin, YH;Cheng, CK;Hsu, CH;Kwo, J;Hong, M; Wu, SY; Chen, KH; Lin, YH; Cheng, CK; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
Investigation of the transport properties of Bi2 Se3 films grown on various substrates
|
Lin, HY;Wang, CY;Chen, KHM;Lin, YH;Chen, KH;Yang, BY;Hong, M;Kwo, J; Lin, HY; Wang, CY; Chen, KHM; Lin, YH; Chen, KH; Yang, BY; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
Demonstration of large field effect in topological insulator films via a high-kappa back gate
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Wang, CY;Lin, HY;Lin, YH;Chen, KH;Yang, BY;Chen, KHM;Peng, ZJ;Lee, SF;Hong, M;Kwo, J; Wang, CY; Lin, HY; Lin, YH; Chen, KH; Yang, BY; Chen, KHM; Peng, ZJ; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
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