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"kwo j"
Showing items 246-295 of 563 (12 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Strong crystal anisotropy of magneto-transport property in Fe 3 Si epitaxial film
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Hung, HY;Huang, SY;Chang, P;Lin, WC;Liu, YC;Lee, SF;Hong, M;Kwo, J; Hung, HY; Huang, SY; Chang, P; Lin, WC; Liu, YC; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Achieving very high drain current of 1.23 mA/$μ$m in a 1-$μ$m-gate-length self-aligned inversion-channel MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3)/In 0.75 Ga 0.25 As MOSFET
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Lin, TD;Chang, P;Wu, YD;Chiu, HC;Kwo, J;Hong, M; Lin, TD; Chang, P; Wu, YD; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Low interfacial density of states around midgap in MBE-Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As
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Lin, CA;Chiu, HC;Chiang, TH;Chang, YC;Lin, TD;Kwo, J;Wang, W-E;Dekoster, J;Heyns, M;Hong, M; Lin, CA; Chiu, HC; Chiang, TH; Chang, YC; Lin, TD; Kwo, J; Wang, W-E; Dekoster, J; Heyns, M; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Self-aligned inversion-channel In0. 2Ga0. 8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3 (Gd2O3) as the gate dielectric
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Chang, WH;Chiang, TH;Wu, YD;Hong, M;Lin, CA;Kwo, J; Chang, WH; Chiang, TH; Wu, YD; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy
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Kwo, J; MINGHWEI HONG; Chiu, Ya-Ping;Huang, BC;Shih, MC;Shen, JY;Chang, P;Chang, CS;Huang, ML;Tsai, M-H;Hong, M;Kwo, J; Chiu, Ya-Ping; Huang, BC; Shih, MC; Shen, JY; Chang, P; Chang, CS; Huang, ML; Tsai, M-H; Hong, M |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Magnetization reversal processes of epitaxial Fe3Si films on GaAs (001)
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Liu, YC;Chang, P;Huang, SY;Chang, LJ;Lin, WC;Lee, SF;Hong, M;Kwo, J; Liu, YC; Chang, P; Huang, SY; Chang, LJ; Lin, WC; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Room temperature ferromagnetism in cluster free, Co doped Y2 O 3 dilute magnetic oxide
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Wu, CN;Huang, SY;Lin, WC;Wu, TS;Soo, YL;Lee, WC;Lee, YJ;Chang, YH;Hong, M;Kwo, J; Wu, CN; Huang, SY; Lin, WC; Wu, TS; Soo, YL; Lee, WC; Lee, YJ; Chang, YH; Hong, M; Kwo, J |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Atomic-scale evolution of interfacial electronic band alignment in epitaxial Gd2 O 3 on GaAs (100)
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Chang, CS; Huang, ML; Hong, M; Kwo, J; MINGHWEI HONG; Huang, BC;Chiu, YP;Shih, MC;Shen, JY;Chang, P;Chiang, TH;Chang, CS;Huang, ML;Hong, M;Kwo, J; Huang, BC; Chiu, YP; Shih, MC; Shen, JY; Chang, P; Chiang, TH |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Direct measurement of interfacial structure in epitaxial Gd 2 O 3 on GaAs (001) using scanning tunneling microscopy
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Chiang, TH; Hong, M; Kwo, J; MINGHWEI HONG; Chiu, Ya-Ping;Shih, MC;Huang, BC;Shen, JY;Huang, ML;Lee, WC;Chang, P;Chiang, TH;Hong, M;Kwo, J; Chiu, Ya-Ping; Shih, MC; Huang, BC; Shen, JY; Huang, ML; Lee, WC; Chang, P |
| 臺大學術典藏 |
2018-09-10T08:36:30Z |
Magnetization reversal processes of epitaxial Fe3Si films on GaAs(001)
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SSU-YEN HUANG; Kwo, J.; Hong, M.; Chang, L.J.; Lin, W.C.; Lee, S.F.; Huang, S.Y.; Chang, P.; Liu, Y.C.; Liu, Y.C.;Chang, P.;Huang, S.Y.;Chang, L.J.;Lin, W.C.;Lee, S.F.;Hong, M.;Kwo, J. |
| 臺大學術典藏 |
2018-09-10T08:36:30Z |
Intrinsic spin-dependent thermal transport
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Huang, S.Y.;Wang, W.G.;Lee, S.F.;Kwo, J.;Chien, C.L.; Huang, S.Y.; Wang, W.G.; Lee, S.F.; Kwo, J.; Chien, C.L.; SSU-YEN HUANG |
| 臺大學術典藏 |
2018-09-10T08:36:29Z |
Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial film
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Hung, H.Y.;Huang, S.Y.;Chang, P.;Lin, W.C.;Liu, Y.C.;Lee, S.F.;Hong, M.;Kwo, J.; Hung, H.Y.; Huang, S.Y.; Chang, P.; Lin, W.C.; Liu, Y.C.; Lee, S.F.; Hong, M.; Kwo, J.; SSU-YEN HUANG |
| 臺大學術典藏 |
2018-09-10T08:12:53Z |
Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO 2 as a gate dielectric
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Chang, YC;Chang, WH;Chang, YH;Kwo, J;Lin, YS;Hsu, SH;Hong, JM;Tsai, CC;Hong, M; Chang, YC; Chang, WH; Chang, YH; Kwo, J; Lin, YS; Hsu, SH; Hong, JM; Tsai, CC; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:53Z |
Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3/Ga2O3 (Gd2O3)/In0. 2Ga0. 8As
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Wu, YD;Lin, TD;Chiang, TH;Chang, YC;Chiu, HC;Lee, YJ;Hong, M;Lin, CA;Kwo, J; Wu, YD; Lin, TD; Chiang, TH; Chang, YC; Chiu, HC; Lee, YJ; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:53Z |
Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics
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Lin, TD;Chiu, HC;Chang, P;Chang, YH;Wu, YD;Hong, M;Kwo, J; Lin, TD; Chiu, HC; Chang, P; Chang, YH; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:53Z |
Effective reduction of interfacial traps in Al 2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing
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Chang, YC;Merckling, C;Penaud, J;Lu, CY;Wang, WE;Dekoster, J;Meuris, M;Caymax, M;Heyns, M;Kwo, J;others; Chang, YC; Merckling, C; Penaud, J; Lu, CY; Wang, WE; Dekoster, J; Meuris, M; Caymax, M; Heyns, M; Kwo, J; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
dc and rf characteristics of self-aligned inversion-channel In0. 53 Ga0. 47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics
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Lin, TD;Chang, P;Chiu, HC;Hong, M;Kwo, J;Lin, YS;Hsu, Shawn SH; Lin, TD; Chang, P; Chiu, HC; Hong, M; Kwo, J; Lin, YS; Hsu, Shawn SH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
Structural Characteristics of Nanometer Thick Gd2O3 Films Grown on GaN (0001)
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Chang, WH;Chang, P;Lai, TY;Lee, YJ;Kwo, J;Hsu, C-H;Hong, M; Chang, WH; Chang, P; Lai, TY; Lee, YJ; Kwo, J; Hsu, C-H; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
Al2O3/Ga2O3 (Gd2O3) passivation on In0. 20Ga0. 80As/GaAs—structural intactness with high-temperature annealing
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Lee, YJ;Lee, CH;Tung, LT;Chiang, TH;Lai, TY;Kwo, J;Hsu, CH;Hong, M; Lee, YJ; Lee, CH; Tung, LT; Chiang, TH; Lai, TY; Kwo, J; Hsu, CH; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
High-quality molecular-beam-epitaxy-grown Ga2O3 „Gd2O3… on Ge „100…: Electrical and chemical characterizations
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Chu, RL;Lin, TD;Chu, LK;Huang, ML;Chang, CC;Hong, M;Lin, CA;Kwo, J; Chu, RL; Lin, TD; Chu, LK; Huang, ML; Chang, CC; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layers
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Chu, LK;Chu, RL;Lin, TD;Lee, WC;Lin, CA;Huang, ML;Lee, YJ;Kwo, J;Hong, M; Chu, LK; Chu, RL; Lin, TD; Lee, WC; Lin, CA; Huang, ML; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2
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Chang, P;Lee, WC;Huang, ML;Lee, YJ;Hong, M;Kwo, J; Chang, P; Lee, WC; Huang, ML; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
Great reduction of interfacial traps in Al 2 O 3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing
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Chang, YC;Merckling, C;Penaud, J;Lu, CY;Brammertz, G;Wang, WE;Hong, M;Kwo, J;Dekoster, J;Caymax, M;others; Chang, YC; Merckling, C; Penaud, J; Lu, CY; Brammertz, G; Wang, WE; Hong, M; Kwo, J; Dekoster, J; Caymax, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2O3 epitaxial films on Si (111)
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Lee, YJ;Lee, WC;Huang, ML;Wu, SY;Nieh, CW;Hong, M;Kwo, J;Hsu, CH; Lee, YJ; Lee, WC; Huang, ML; Wu, SY; Nieh, CW; Hong, M; Kwo, J; Hsu, CH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS
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Hong, M;Kwo, J;Lin, TD;Huang, ML;Lee, WC;Chang, P; Hong, M; Kwo, J; Lin, TD; Huang, ML; Lee, WC; Chang, P; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
Achieving high-performance Ge MOS devices using high-к gate dielectrics Ga 2 O 3 (Gd 2 O 3) of sub-nm EOT
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Chu, LK;Chu, RL;Lin, CA;Lin, TD;Chiang, TH;Kwo, J;Hong, Mingyi; Chu, LK; Chu, RL; Lin, CA; Lin, TD; Chiang, TH; Kwo, J; Hong, Mingyi; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial films
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Huang, SY;Hung, HY;Chang, P;Lin, WC;Lee, SF;Hong, M;Kwo, J; Huang, SY; Hung, HY; Chang, P; Lin, WC; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
DC and RF characteristics of self-aligned inversion-channel In0. 53Ga0. 47As MOSFETs using MBE-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics
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Lin, T;Chang, P;Chiu, H;Hong, M;Kwo, J;Lin, Y;Hsu, S; Lin, T; Chang, P; Chiu, H; Hong, M; Kwo, J; Lin, Y; Hsu, S; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
Bulk and Surface Excitations in Gd2O3: Electron Energy Loss Spectroscopy Study
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Liou, SC;Chu, M-W;Chen, CH;Lee, YJ;Hong, M;Kwo, J; Liou, SC; Chu, M-W; Chen, CH; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:20Z |
Diffraction studies of rare earth metals and superlattices
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Bohr, J;Gibbs, Doon;Axe, JD;Moncton, DE;d'Amico, KL;Majkrzak, CF;Kwo, J;Hong, M;Chien, CL;Jensen, J; Bohr, J; Gibbs, Doon; Axe, JD; Moncton, DE; d'Amico, KL; Majkrzak, CF; Kwo, J; Hong, M; Chien, CL; Jensen, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:20Z |
Demonstration of submicron depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis
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Wang, Yi Chun; Hong, M; Kuo, JM; Mannaerts, JP; Kwo, J; Tsai, HS; Krajewski, JJ; Chen, YK; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:20Z |
Passivation of GaAs using „Ga2O3…„Gd2O3… x, 0 x 1.0 films
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Kwo, J; Murphy, DW; Hong, M; Opila, RL; Mannaerts, JP; Sergent, AM; Masaitis, RL; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:20Z |
Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation
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Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Sergent, AM; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y 2 O 3 on Ge
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Chu, LK;Lee, WC;Huang, ML;Chang, YH;Tung, LT;Chang, CC;Lee, YJ;Kwo, J;Hong, M; Chu, LK; Lee, WC; Huang, ML; Chang, YH; Tung, LT; Chang, CC; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
InGaAs Metal Oxide Semiconductor Devices with Ga 2 O 3 (Gd 2 O 3) High-$κ$ Dielectrics for Science and Technology beyond Si CMOS
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Hong, M;Kwo, J;Lin, TD;Huang, ML; Hong, M; Kwo, J; Lin, TD; Huang, ML; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
High $κ$ dielectric single-crystal monoclinic Gd 2 O 3 on GaN with excellent thermal, structural, and electrical properties
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Chang, WH;Lee, CH;Chang, P;Chang, YC;Lee, YJ;Kwo, J;Tsai, CC;Hong, JM;Hsu, C-H;Hong, M; Chang, WH; Lee, CH; Chang, P; Chang, YC; Lee, YJ; Kwo, J; Tsai, CC; Hong, JM; Hsu, C-H; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Energy-band parameters of atomic layer deposited Al 2 O 3 and HfO 2 on In x Ga As
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Huang, ML;Chang, YC;Chang, YH;Lin, TD;Kwo, J;Hong, M; Huang, ML; Chang, YC; Chang, YH; Lin, TD; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Structure of epitaxial Gd 2 O 3 films grown on GaAs (100)
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Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Kopylov, N; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Electrical response of superconducting YBa2Cu3O7- $δ$ to light
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Brocklesby, Wo S;Monroe, Don;Levi, AFJ;Hong, M;Liou, Sy\\_Hwang;Kwo, J;Rice, CE;Mankiewich, PM;Howard, RE; Brocklesby, Wo S; Monroe, Don; Levi, AFJ; Hong, M; Liou, Sy\\_Hwang; Kwo, J; Rice, CE; Mankiewich, PM; Howard, RE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Research advances on III-V MOSFET electronics beyond Si CMOS
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Kwo, J;Hong, M; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices
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Chu, LK;Lin, TD;Huang, ML;Chu, RL;Chang, CC;Kwo, J;Hong, M; Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Ga 2 O 3 (Gd 2 O 3)/GaAs power MOSFETs
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Wang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Tsai, HS; Kwo, J; Krajewski, JJ; Chen, YK; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Passivation of GaAs using gallium-gadolinium oxides
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Masaitis, RL; Sergent, AM; MINGHWEI HONG; Opila, RL; Kwo, J; Murphy, DW; Hong, M; Mannaerts, JP |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
Depletion-mode In 0.2 Ga 0.8 As/GaAs MOSFET with molecular beam epitaxy grown Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics
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Lin, CA;Lin, TD;Chiang, TH;Chiu, HC;Chang, P;Hong, M;Kwo, J; Lin, CA; Lin, TD; Chiang, TH; Chiu, HC; Chang, P; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
GaN on Si with nm-thick single-crystal Sc 2 O 3 as a template using molecular beam epitaxy
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Lee, WC;Lee, YJ;Kwo, J;Hsu, CH;Lee, CH;Wu, SY;Ng, HM;Hong, M; Lee, WC; Lee, YJ; Kwo, J; Hsu, CH; Lee, CH; Wu, SY; Ng, HM; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
Molecular beam epitaxy-grown Al 2 O 3/HfO 2 high-$κ$ dielectrics for germanium
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Lee, WC;Chin, BH;Chu, LK;Lin, TD;Lee, YJ;Tung, LT;Lee, CH;Hong, M;Kwo, J; Lee, WC; Chin, BH; Chu, LK; Lin, TD; Lee, YJ; Tung, LT; Lee, CH; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
Advances in GaAs Mosfet's Using Ga 2 O 3 (Gd 2 O 3) as Gate Oxide
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Wang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Kwo, J; Tsai, HS; Krajewski, JJ; Weiner, JS; Chen, YK; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al 2 O 3 as a template followed by atomic layer deposition growth
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Chang, YH;Chiu, HC;Chang, WH;Kwo, J;Tsai, CC;Hong, JM;Hong, M; Chang, YH; Chiu, HC; Chang, WH; Kwo, J; Tsai, CC; Hong, JM; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:16Z |
In-situ growth of Y 1 Ba 2 Cu 3 O 7-x films by molecular beam epitaxy with an activated oxygen source
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Kwo, J;Hong, M;Trevor, DJ;Fleming, RM;White, AE;Mannaerts, JP;Farrow, RC;Kortan, AR;Short, KT; Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Mannaerts, JP; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:16Z |
The (Ga 2 O 3) 1- x (Gd 2 O 3) x, Oxides with x= 0-1.0 for GaAs Passivation
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Kwo, J; Hong, M; Kortan, AR; Murphy, DW; Mannaerts, JP; Sergent, AM; Wang, YC; Hsieh, KC; MINGHWEI HONG |
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