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Taiwan Academic Institutional Repository >
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"kwo j"
Showing items 266-290 of 563 (23 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T08:12:52Z |
Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layers
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Chu, LK;Chu, RL;Lin, TD;Lee, WC;Lin, CA;Huang, ML;Lee, YJ;Kwo, J;Hong, M; Chu, LK; Chu, RL; Lin, TD; Lee, WC; Lin, CA; Huang, ML; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2
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Chang, P;Lee, WC;Huang, ML;Lee, YJ;Hong, M;Kwo, J; Chang, P; Lee, WC; Huang, ML; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
Great reduction of interfacial traps in Al 2 O 3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing
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Chang, YC;Merckling, C;Penaud, J;Lu, CY;Brammertz, G;Wang, WE;Hong, M;Kwo, J;Dekoster, J;Caymax, M;others; Chang, YC; Merckling, C; Penaud, J; Lu, CY; Brammertz, G; Wang, WE; Hong, M; Kwo, J; Dekoster, J; Caymax, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2O3 epitaxial films on Si (111)
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Lee, YJ;Lee, WC;Huang, ML;Wu, SY;Nieh, CW;Hong, M;Kwo, J;Hsu, CH; Lee, YJ; Lee, WC; Huang, ML; Wu, SY; Nieh, CW; Hong, M; Kwo, J; Hsu, CH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS
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Hong, M;Kwo, J;Lin, TD;Huang, ML;Lee, WC;Chang, P; Hong, M; Kwo, J; Lin, TD; Huang, ML; Lee, WC; Chang, P; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
Achieving high-performance Ge MOS devices using high-к gate dielectrics Ga 2 O 3 (Gd 2 O 3) of sub-nm EOT
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Chu, LK;Chu, RL;Lin, CA;Lin, TD;Chiang, TH;Kwo, J;Hong, Mingyi; Chu, LK; Chu, RL; Lin, CA; Lin, TD; Chiang, TH; Kwo, J; Hong, Mingyi; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial films
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Huang, SY;Hung, HY;Chang, P;Lin, WC;Lee, SF;Hong, M;Kwo, J; Huang, SY; Hung, HY; Chang, P; Lin, WC; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
DC and RF characteristics of self-aligned inversion-channel In0. 53Ga0. 47As MOSFETs using MBE-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics
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Lin, T;Chang, P;Chiu, H;Hong, M;Kwo, J;Lin, Y;Hsu, S; Lin, T; Chang, P; Chiu, H; Hong, M; Kwo, J; Lin, Y; Hsu, S; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
Bulk and Surface Excitations in Gd2O3: Electron Energy Loss Spectroscopy Study
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Liou, SC;Chu, M-W;Chen, CH;Lee, YJ;Hong, M;Kwo, J; Liou, SC; Chu, M-W; Chen, CH; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:20Z |
Diffraction studies of rare earth metals and superlattices
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Bohr, J;Gibbs, Doon;Axe, JD;Moncton, DE;d'Amico, KL;Majkrzak, CF;Kwo, J;Hong, M;Chien, CL;Jensen, J; Bohr, J; Gibbs, Doon; Axe, JD; Moncton, DE; d'Amico, KL; Majkrzak, CF; Kwo, J; Hong, M; Chien, CL; Jensen, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:20Z |
Demonstration of submicron depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis
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Wang, Yi Chun; Hong, M; Kuo, JM; Mannaerts, JP; Kwo, J; Tsai, HS; Krajewski, JJ; Chen, YK; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:20Z |
Passivation of GaAs using „Ga2O3…„Gd2O3… x, 0 x 1.0 films
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Kwo, J; Murphy, DW; Hong, M; Opila, RL; Mannaerts, JP; Sergent, AM; Masaitis, RL; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:20Z |
Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation
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Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Sergent, AM; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y 2 O 3 on Ge
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Chu, LK;Lee, WC;Huang, ML;Chang, YH;Tung, LT;Chang, CC;Lee, YJ;Kwo, J;Hong, M; Chu, LK; Lee, WC; Huang, ML; Chang, YH; Tung, LT; Chang, CC; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
InGaAs Metal Oxide Semiconductor Devices with Ga 2 O 3 (Gd 2 O 3) High-$κ$ Dielectrics for Science and Technology beyond Si CMOS
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Hong, M;Kwo, J;Lin, TD;Huang, ML; Hong, M; Kwo, J; Lin, TD; Huang, ML; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
High $κ$ dielectric single-crystal monoclinic Gd 2 O 3 on GaN with excellent thermal, structural, and electrical properties
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Chang, WH;Lee, CH;Chang, P;Chang, YC;Lee, YJ;Kwo, J;Tsai, CC;Hong, JM;Hsu, C-H;Hong, M; Chang, WH; Lee, CH; Chang, P; Chang, YC; Lee, YJ; Kwo, J; Tsai, CC; Hong, JM; Hsu, C-H; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Energy-band parameters of atomic layer deposited Al 2 O 3 and HfO 2 on In x Ga As
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Huang, ML;Chang, YC;Chang, YH;Lin, TD;Kwo, J;Hong, M; Huang, ML; Chang, YC; Chang, YH; Lin, TD; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Structure of epitaxial Gd 2 O 3 films grown on GaAs (100)
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Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Kopylov, N; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Electrical response of superconducting YBa2Cu3O7- $δ$ to light
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Brocklesby, Wo S;Monroe, Don;Levi, AFJ;Hong, M;Liou, Sy\\_Hwang;Kwo, J;Rice, CE;Mankiewich, PM;Howard, RE; Brocklesby, Wo S; Monroe, Don; Levi, AFJ; Hong, M; Liou, Sy\\_Hwang; Kwo, J; Rice, CE; Mankiewich, PM; Howard, RE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Research advances on III-V MOSFET electronics beyond Si CMOS
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Kwo, J;Hong, M; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices
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Chu, LK;Lin, TD;Huang, ML;Chu, RL;Chang, CC;Kwo, J;Hong, M; Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Ga 2 O 3 (Gd 2 O 3)/GaAs power MOSFETs
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Wang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Tsai, HS; Kwo, J; Krajewski, JJ; Chen, YK; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Passivation of GaAs using gallium-gadolinium oxides
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Masaitis, RL; Sergent, AM; MINGHWEI HONG; Opila, RL; Kwo, J; Murphy, DW; Hong, M; Mannaerts, JP |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
Depletion-mode In 0.2 Ga 0.8 As/GaAs MOSFET with molecular beam epitaxy grown Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics
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Lin, CA;Lin, TD;Chiang, TH;Chiu, HC;Chang, P;Hong, M;Kwo, J; Lin, CA; Lin, TD; Chiang, TH; Chiu, HC; Chang, P; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
GaN on Si with nm-thick single-crystal Sc 2 O 3 as a template using molecular beam epitaxy
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Lee, WC;Lee, YJ;Kwo, J;Hsu, CH;Lee, CH;Wu, SY;Ng, HM;Hong, M; Lee, WC; Lee, YJ; Kwo, J; Hsu, CH; Lee, CH; Wu, SY; Ng, HM; Hong, M; MINGHWEI HONG |
Showing items 266-290 of 563 (23 Page(s) Totally)
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View [10|25|50] records per page
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