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Institution	Date	Title	Author
臺大學術典藏	2019-12-27T07:49:54Z	New phase formation of Gd2O3films on GaAs(100)	Kortan, A.R.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Krajewski, J.J.; Kopylov, N.; Steiner, C.; Bolliger, B.; Erbudak, M.; MINGHWEI HONG; Kortan, A.R.;Hong, M.;Kwo, J.;Mannaerts, J.P.;Krajewski, J.J.;Kopylov, N.;Steiner, C.;Bolliger, B.;Erbudak, M.
臺大學術典藏	2019-12-27T07:49:54Z	C-V and G-V characterisation of Ga2O3(Gd2O3)/GaN capacitor with low interface state density	Lay, T.S.;Liu, W.D.;Hong, M.;Kwo, J.;Mannaerts, J.P.; Lay, T.S.; Liu, W.D.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:54Z	Properties of high 庥 gate dielectrics Gd2O3 and Y2O3 for Si	Rosamilia, J.M.; MINGHWEI HONG; Krautter, H.W.; Sergnt, A.M.; Krajewski, J.J.; Boone, T.; Lay, T.S.; Mannaerts, J.P.; Sapjeta, B.J.; Muller, D.A.; Chu, S.N.G.; Opila, R.L.; Chabal, Y.J.; Queeney, K.L.; Hong, M.; Kortan, A.R.; Kwo, J.; Kwo, J.;Hong, M.;Kortan, A.R.;Queeney, K.L.;Chabal, Y.J.;Opila, R.L.;Muller, D.A.;Chu, S.N.G.;Sapjeta, B.J.;Lay, T.S.;Mannaerts, J.P.;Boone, T.;Krautter, H.W.;Krajewski, J.J.;Sergnt, A.M.;Rosamilia, J.M.
臺大學術典藏	2019-12-27T07:49:54Z	Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy	Lay, T.S.;Huang, K.H.;Hung, W.H.;Hong, M.;Kwo, J.;Mannaerts, J.P.; Lay, T.S.; Huang, K.H.; Hung, W.H.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:53Z	Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallisation annealing	Lay, T.S.;Liu, W.D.;Kwo, J.;Hong, M.;Mannaerts, J.P.; Lay, T.S.; Liu, W.D.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:53Z	Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3 ) as gate dielectric	Ng, K.; Bude, J.; MINGHWEI HONG; Yang, B.;Ye, P.D.;Kwo, J.;Frei, M.R.;Gossmann, H.-J.L.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.;Bude, J.; Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.
臺大學術典藏	2019-12-27T07:49:53Z	Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces	Lay, T.S.;Hong, M.;Kwo, J.;Mannaerts, J.P.;Hung, W.H.;Huang, D.J.; Lay, T.S.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Hung, W.H.; Huang, D.J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:51Z	Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3 ) as gate dielectric	Yang, B.;Ye, P.D.;Kwo, J.;Frei, M.R.;Gossmann, H.-J.L.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.;Bude, J.; Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.; Bude, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:51Z	GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition	Ye, P.D.;Wilk, G.D.;Kwo, J.;Yang, B.;Gossmann, H.-J.L.;Frei, M.;Chu, S.N.G.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.K.;Bude, J.; Ye, P.D.; Wilk, G.D.; Kwo, J.; Yang, B.; Gossmann, H.-J.L.; Frei, M.; Chu, S.N.G.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:51Z	Advances in high 庥 gate dielectrics for Si and III-V semiconductors	Kwo, J.;Hong, M.;Busch, B.;Muller, D.A.;Chabal, Y.J.;Kortan, A.R.;Mannaerts, J.P.;Yang, B.;Ye, P.;Gossmann, H.;Sergent, A.M.;Ng, K.K.;Bude, J.;Schulte, W.H.;Garfunkel, E.;Gustafsson, T.; Kwo, J.; Hong, M.; Busch, B.; Muller, D.A.; Chabal, Y.J.; Kortan, A.R.; Mannaerts, J.P.; Yang, B.; Ye, P.; Gossmann, H.; Sergent, A.M.; Ng, K.K.; Bude, J.; Schulte, W.H.; Garfunkel, E.; Gustafsson, T.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:50Z	Depth-profile study of the electronic structures at Ga2O 3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy	MINGHWEI HONG; Mannaerts, J.P.; Kwo, J.; Hung, W.H.; Hong, M.; Liao, Y.Y.; Lay, T.S.; Mannaerts, J.P.; Kwo, J.; Hong, M.; Hung, W.H.; Lay, T.S.; Liao, Y.Y.
臺大學術典藏	2019-12-27T07:49:50Z	Thin single-crystal Sc2O3 films epitaxially grown on Si (1 1 1) - Structure and electrical properties	Chen, C.P.; Hong, M.; Kwo, J.; Cheng, H.M.; Huang, Y.L.; Lin, S.Y.; Chi, J.; Lee, H.Y.; Hsieh, Y.F.; Mannaerts, J.P.; Chen, C.P.; Hong, M.; Kwo, J.; Cheng, H.M.; Huang, Y.L.; Lin, S.Y.; Chi, J.; Lee, H.Y.; Hsieh, Y.F.; Mannaerts, J.P.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:50Z	MBE-grown high 庥 gate dielectrics of HfO 2 and (Hf-Al)O 2 for Si and III-V semiconductors nano-electronics	Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:50Z	GaAs-based metal-oxide semiconductor field-effect transistors with Al 2 O 3 gate dielectrics grown by atomic layer deposition	Ye, P.D.; Wilk, G.D.; Yang, B.; Kwo, J.; Gossmann, H.-J.L.; Frei, M.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:50Z	Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor	Lay, T.S.;Liao, Y.Y.;Liu, W.D.;Lai, Y.H.;Hung, W.H.;Kwo, J.;Hong, M.;Mannaerts, J.P.; Lay, T.S.; Liao, Y.Y.; Liu, W.D.; Lai, Y.H.; Hung, W.H.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:49Z	High-quality thin single-crystal 帠-Al 2 O 3 films grown on Si (111)	Wu, S.Y.; Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Lee, W.C.; Huang, Y.L.; Wu, S.Y.; Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Lee, W.C.; Huang, Y.L.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:49Z	Thermodynamic stability of Ga 2 O 3 (Gd 2 O 3 ) GaAs interface	Huang, Y.L.; Chang, P.; Yang, Z.K.; Lee, Y.J.; Lee, H.Y.; Liu, H.J.; Kwo, J.; Mannaerts, J.P.; Hong, M.; Huang, Y.L.; Chang, P.; Yang, Z.K.; Lee, Y.J.; Lee, H.Y.; Liu, H.J.; Kwo, J.; Mannaerts, J.P.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:48Z	Structure of Sc 2O 3 films epitaxially grown on 帢-Al 2O 3 (0001)	Kortan, A.R.; Kopylov, N.; Kwo, J.; Hong, M.; Chen, C.P.; Mannaerts, J.P.; Liou, S.H.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:48Z	Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3	Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lee, Y.J.; Chang, P.; Kwo, J.; Wu, T.B.; Hong, M.; Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lee, Y.J.; Chang, P.; Kwo, J.; Wu, T.B.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:48Z	Advanced high 庥 dielectrics for nano-electronics - Science and technologies	MINGHWEI HONG; Kwo, J.; Hong, M.; Kwo, J.; Hong, M.
臺大學術典藏	2019-12-27T07:49:48Z	Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy	Lay, T.S.; Chang, S.C.; Din, G.J.; Yeh, C.C.; Hung, W.H.; Lee, W.G.; Kwo, J.; Hong, M.; Lay, T.S.; Chang, S.C.; Din, G.J.; Yeh, C.C.; Hung, W.H.; Lee, W.G.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:47Z	Molecular beam epitaxy grown template for subsequent atomic layer deposition of high 庥 dielectrics	Lee, K.Y.; Lee, W.C.; Lee, Y.J.; Huang, M.L.; Chang, C.H.; Wu, T.B.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:47Z	III-V MOSFET's with advanced high 庥 dielectrics	Hong, M.; Kwo, J.; Chen, C.P.; Chang, Y.C.; Huang, M.L.; Lin, T.D.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:47Z	Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As	Chang, C.-H.; Chiou, Y.-K.; Chang, Y.-C.; Lee, K.-Y.; Lin, T.-D.; Wu, T.-B.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:47Z	Structure of HfO2films epitaxially grown on GaAs (001)	Hsu, C.-H.; Chang, P.; Lee, W.C.; Yang, Z.K.; Lee, Y.J.; Hong, M.; Kwo, J.; Huang, C.M.; Lee, H.Y.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:46Z	Structural and magnetic properties of epitaxial Fe3Si/GaAs heterostructures	MINGHWEI HONG; Kwo, J.; Hsu, Y.L.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Chiu, Y.N.; Ho, C.C.; Chang, P.; Hsu, C.H.; Hong, M.
臺大學術典藏	2019-12-27T07:49:46Z	Structural and electrical characteristics of Ga2 O3 (Gd2 O3) GaAs under high temperature annealing	Chen, C.P.; Lee, Y.J.; Chang, Y.C.; MINGHWEI HONG; Lay, T.S.; Yang, Z.K.; Hong, M.; Kwo, J.; Lee, H.Y.
臺大學術典藏	2019-12-27T07:49:45Z	Cubic HfO2 doped with y2O2 epitaxial films on GaAs (001) of enhanced dielectric constant	Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:45Z	MBE grown high-quality Gd2O3/Si(1 1 1) hetero-structure	Lin, T.D.; Hang, M.C.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:45Z	MBE grown high 庥 dielectrics Ga2O3(Gd2O3) on GaN	Chang, Y.C.; Lee, Y.J.; Chiu, Y.N.; Lin, T.D.; Wu, S.Y.; Chiu, H.C.; Kwo, J.; Wang, Y.H.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:45Z	Depletion-mode GaAs-based MOSFET with Ga 2 O 3 (Gd 2 O 3 ) as a gate dielectric	Tsai, P.J.; Chu, L.K.; Chen, Y.W.; Chiu, Y.N.; Yang, H.P.; Chang, P.; Kwo, J.; Chi, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:44Z	Local environment surrounding Co in MBE-grown Co-doped Hf O2 thin films probed by EXAFS	Soo, Y.L.; Weng, S.C.; Sun, W.H.; Chang, S.L.; Lee, W.C.; Chang, Y.S.; Kwo, J.; Hong, M.; Ablett, J.M.; Kao, C.-C.; Liu, D.G.; Lee, J.F.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:44Z	Observation of room temperature ferromagnetic behavior in cluster-free, Co doped Hf O2 films	Chang, Y.H.; Soo, Y.L.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Weng, S.C.; Sun, W.H.; Hong, M.; Kwo, J.; Lee, S.F.; Ablett, J.M.; Kao, C.-C.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:44Z	Structural and electrical characteristics of atomic layer deposited high 庥 HfO2on GaN	Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Huang, M.L.; Lee, K.Y.; Hong, M.; Chiu, Y.N.; Kwo, J.; Wang, Y.H.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:44Z	Defining new frontiers in electronic devices with high 庥 dielectrics and interfacial engineering	Hong, M.; Lee, W.C.; Huang, M.L.; Chang, Y.C.; Lin, T.D.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, H.Y.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:43Z	Inelastic electron tunneling spectroscopy study of metal-oxide- semiconductor diodes based on high-庥 gate dielectrics	You, S.L.; Huang, C.C.; Wang, C.J.; Ho, H.C.; Kwo, J.; Lee, W.C.; Lee, K.Y.; Wu, Y.D.; Lee, Y.J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:43Z	Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion	Zheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; Hong, M.; Kwo, J.; Cui, S.; Ma, T.P.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:43Z	InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation	MINGHWEI HONG;Lay, T.S.;Cheng, K.Y.;Liao, C.C.;Kwo, J.;Hong, M.;Lin, T.D.;Lee, K.Y.;Lee, Y.J.;Huang, M.L.;Chang, Y.C.; Chang, Y.C.; Huang, M.L.; Lee, Y.J.; Lee, K.Y.; Lin, T.D.; Hong, M.; Kwo, J.; Liao, C.C.; Cheng, K.Y.; Lay, T.S.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:43Z	Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)	Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Yu, K.L.; Tang, M.-T.; Lin, B.-H.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:42Z	1 nm equivalent oxide thickness in Ga2 O3 (Gd2 O3) In0.2 Ga0.8 As metal-oxide-semiconductor capacitors	Shiu, K.H.;Chiang, T.H.;Chang, P.;Tung, L.T.;Hong, M.;Kwo, J.;Tsai, W.; Shiu, K.H.; Chiang, T.H.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:42Z	Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si (1 1 1) using a 帠-Al2O3 buffer layer	Liu, W.-R.; Li, Y.-H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:42Z	Atomic-layer-deposited Hf O2 on In0.53 Ga0.47 As: Passivation and energy-band parameters	Chang, Y.C.; Huang, M.L.; Lee, K.Y.; Lee, Y.J.; Lin, T.D.; Hong, M.; Kwo, J.; Lay, T.S.; Liao, C.C.; Cheng, K.Y.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:42Z	Nanometer thick single crystal Y2 O3 films epitaxially grown on Si (111) with structures approaching perfection	Nieh, C.W.; Lee, Y.J.; Lee, W.C.; Yang, Z.K.; Kortan, A.R.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:42Z	Time dependent preferential sputtering in the HfO2 layer on Si(100)	Chang, S.J.;Lee, W.C.;Hwang, J.;Hong, M.;Kwo, J.; Chang, S.J.; Lee, W.C.; Hwang, J.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:41Z	Oxide scalability in Al2 O3 Ga2 O3 (Gd2 O3) In0.20 Ga0.80 AsGaAs heterostructures	Shiu, K.H.; Chiang, C.H.; Lee, Y.J.; Lee, W.C.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:41Z	Growth and structural characteristics of GaN/AIN/nanothick 帠-Al 2O3/Si(111)	Lee, W.C.; Lee, Y.J.; Tung, L.T.; Wu, S.Y.; Lee, C.H.; Hong, M.; Ng, H.M.; Kwo, J.; Hsu, C.H.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:41Z	Transmission electron microscopy characterization of HfO 2/GaAs(001) heterostructures grown by molecular beam epitaxy	Liou, S.C.; Chu, M.-W.; Chen, C.H.; Lee, Y.J.; Chang, P.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:40Z	Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2 O3 as gate dielectric	Lee, C.H.; Shiu, K.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG; Tung, L.T.; Chiu, H.C.; Chang, W.H.; Chang, Y.C.
臺大學術典藏	2019-12-27T07:49:40Z	High-performance self-aligned inversion-channel In0.53 Ga0.47 As metal-oxide-semiconductor field-effect-transistor with Al2 O3 Ga2 O3 (Gd2 O3) as gate dielectrics	Lin, T.D.;Chiu, H.C.;Chang, P.;Tung, L.T.;Chen, C.P.;Hong, M.;Kwo, J.;Tsai, W.;Wang, Y.C.; Lin, T.D.; Chiu, H.C.; Chang, P.; Tung, L.T.; Chen, C.P.; Hong, M.; Kwo, J.; Tsai, W.; Wang, Y.C.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:40Z	Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As	MINGHWEI HONG; Lee, K.Y.; Lee, Y.J.; Chang, P.; Huang, M.L.; Chang, Y.C.; Hong, M.; Kwo, J.

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