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Taiwan Academic Institutional Repository >
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"kwo j"
Showing items 446-470 of 563 (23 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T05:21:13Z |
Papers from the 22nd North American Conference on Molecular Beam Epitaxy-Oxides-Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy
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Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, WH; Lee, WG; Kwo, J; Hong, M; Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, WH; Lee, WG; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:13Z |
Depletion-mode InGaAs/GaAs MOSFET with Oxide Passivated by Amorphous Si
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Tsai, PJ; Chiu, UN; Chu, LK; Chen, YW; Yang, HP; Chang, P; Kwo, J; Chi, J; Hong, M; Tsai, PJ; Chiu, UN; Chu, LK; Chen, YW; Yang, HP; Chang, P; Kwo, J; Chi, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:52:00Z |
Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition
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Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, HJL; Hong, M; Ng, KK; Bude, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:59Z |
Epitaxial Growth and Structure of Thin Single Crystal $γ$-Al 2 O 3 Films on Si (111) Using e-Beam Evaporation of Sapphire in Ultra-High Vacuum
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Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Wu, SY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:59Z |
Temperature dependence of resonant x-ray magnetic scattering in holmium
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Helgesen, G;Hill, JP;Thurston, TR;Gibbs, Doon;Kwo, J;Hong, M; Helgesen, G; Hill, JP; Thurston, TR; Gibbs, Doon; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:58Z |
Structure of Sc 2 O 3 Films Epitaxially Grown on $α$-Al 2 O 3 (111)
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Kortan, AR; Hong, M; Kwo, J; Chang, P; Chen, CP; Mannaerts, JP; Liou, SH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:58Z |
Fundamental Study and Oxide Reliability of the MBE-Grown Ga 2- x Gd x O 3 Dielectric Oxide for Compound Semiconductor MOSFETs
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Kwo, J; Hong, M; Mannaerts, JP; Lee, YJ; Wu, YD; Lee, WG; Milkap, S; Yang, B; Gustaffson, T; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:58Z |
Structural Properties of Single Crystal Rare-Earth Thin Films Y and Gd Grown by Molecular Beam Epitaxy
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Kwo, J;McWhan, DB;Hong, M;Gyorgy, EM;Feldman, LC;Cunningham, JE; Kwo, J; McWhan, DB; Hong, M; Gyorgy, EM; Feldman, LC; Cunningham, JE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:58Z |
GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition
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Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:55Z |
Low-Resistivity Non-Alloyed Ohmic Contacts to p-and n-Gaas Using In-Situ Integrated Process
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Hong, M;Vakhshoori, D;Mannaerts, JP;Kwo, J; Hong, M; Vakhshoori, D; Mannaerts, JP; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:35Z |
Advances in high $κ$ gate dielectrics for Si and III-V semiconductors
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Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG; Chabal, YJ; Kwo, J;Hong, M;Busch, B;Muller, DA;Chabal, YJ;Kortan, AR;Mannaerts, JP;Yang, B;Ye, P;Gossmann, H;others; Kwo, J; Hong, M; Busch, B; Muller, DA |
| 臺大學術典藏 |
2018-09-10T04:31:35Z |
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
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Ye, PD;Wilk, GD;Kwo, J;Yang, BAYB;Gossmann, H-JL;Frei, MAFM;Chu, SNG;Mannaerts, JP;Sergent, MASM;Hong, MAHM;others; Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:35Z |
GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
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MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Rapid post-metallization annealing effects on high-k Y 2 O 3/Si capacitor
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Lay, TS;Liao, YY;Liu, WD;Lai, YH;Hung, Wei-Hsiu;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liao, YY; Liu, WD; Lai, YH; Hung, Wei-Hsiu; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Schottky barrier height and interfacial state density on oxide-GaAs interface
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Hwang, Jenn-Shyong;Chang, CC;Chen, MF;Chen, CC;Lin, KI;Tang, FC;Hong, M;Kwo, J; Hwang, Jenn-Shyong; Chang, CC; Chen, MF; Chen, CC; Lin, KI; Tang, FC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3) as gate dielectric
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Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, K;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Magnetic properties of epitaxial single crystal ultrathin Fe3Si films on GaAs (001)
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Liou, Sy\\_Hwang;Malhotra, SS;Shen, JX;Hong, M;Kwo, J;Chen, HS;Mannaerts, JP; Liou, Sy\\_Hwang; Malhotra, SS; Shen, JX; Hong, M; Kwo, J; Chen, HS; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition
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Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:35Z |
TRANSMISSION ELECTRON-MICROSCOPY STUDY OF INTERMETALLIC COMPOUND FE3ALXSI1-X EPITAXIALLY GROWN ON GAAS
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Hsieh, YF;Hong, M;Kwo, J;Kortan, AR;Chen, HS;Mannaerts, JP; Hsieh, YF; Hong, M; Kwo, J; Kortan, AR; Chen, HS; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:35Z |
Single-crystal GaN/Gd2O3/GaN heterostructure
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MINGHWEI HONG; Lee, CM; Chyi, JI; Anselm, KA; Cho, AY; Ng, HM; Kortan, AR; Mannaerts, JP; Chu, SNG; Kwo, J; Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer
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Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, KK;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; Bude, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Advances in high & kappa gate dielectrics for Si and III-V semiconductors
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Kwo, J;Hong, M;Busch, B;Muller, DA;Chabal, YJ;Kortan, AR;Mannaerts, JP;Yang, B;Ye, P;Gossmann, H;others; Kwo, J; Hong, M; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Electrical characteristics of ultrathin Pt/Y 2 O 3/Si capacitor with rapid post-metallisation annealing
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Lay, TS;Liu, WD;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liu, WD; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric
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Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, K;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:32Z |
GaN/Gd2O3/GaN Single Crystal Heterostructure
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Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI; MINGHWEI HONG |
Showing items 446-470 of 563 (23 Page(s) Totally)
<< < 13 14 15 16 17 18 19 20 21 22 > >>
View [10|25|50] records per page
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