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Showing items 451-500 of 563  (12 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T04:51:58Z Structure of Sc 2 O 3 Films Epitaxially Grown on $α$-Al 2 O 3 (111) Kortan, AR; Hong, M; Kwo, J; Chang, P; Chen, CP; Mannaerts, JP; Liou, SH; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:51:58Z Fundamental Study and Oxide Reliability of the MBE-Grown Ga 2- x Gd x O 3 Dielectric Oxide for Compound Semiconductor MOSFETs Kwo, J; Hong, M; Mannaerts, JP; Lee, YJ; Wu, YD; Lee, WG; Milkap, S; Yang, B; Gustaffson, T; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:51:58Z Structural Properties of Single Crystal Rare-Earth Thin Films Y and Gd Grown by Molecular Beam Epitaxy Kwo, J;McWhan, DB;Hong, M;Gyorgy, EM;Feldman, LC;Cunningham, JE; Kwo, J; McWhan, DB; Hong, M; Gyorgy, EM; Feldman, LC; Cunningham, JE; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:51:58Z GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:51:55Z Low-Resistivity Non-Alloyed Ohmic Contacts to p-and n-Gaas Using In-Situ Integrated Process Hong, M;Vakhshoori, D;Mannaerts, JP;Kwo, J; Hong, M; Vakhshoori, D; Mannaerts, JP; Kwo, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:35Z Advances in high $κ$ gate dielectrics for Si and III-V semiconductors Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG; Chabal, YJ; Kwo, J;Hong, M;Busch, B;Muller, DA;Chabal, YJ;Kortan, AR;Mannaerts, JP;Yang, B;Ye, P;Gossmann, H;others; Kwo, J; Hong, M; Busch, B; Muller, DA
臺大學術典藏 2018-09-10T04:31:35Z GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition Ye, PD;Wilk, GD;Kwo, J;Yang, BAYB;Gossmann, H-JL;Frei, MAFM;Chu, SNG;Mannaerts, JP;Sergent, MASM;Hong, MAHM;others; Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:35Z GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL
臺大學術典藏 2018-09-10T04:31:34Z Rapid post-metallization annealing effects on high-k Y 2 O 3/Si capacitor Lay, TS;Liao, YY;Liu, WD;Lai, YH;Hung, Wei-Hsiu;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liao, YY; Liu, WD; Lai, YH; Hung, Wei-Hsiu; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:34Z Schottky barrier height and interfacial state density on oxide-GaAs interface Hwang, Jenn-Shyong;Chang, CC;Chen, MF;Chen, CC;Lin, KI;Tang, FC;Hong, M;Kwo, J; Hwang, Jenn-Shyong; Chang, CC; Chen, MF; Chen, CC; Lin, KI; Tang, FC; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:34Z Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3) as gate dielectric Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, K;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:34Z Magnetic properties of epitaxial single crystal ultrathin Fe3Si films on GaAs (001) Liou, Sy\\_Hwang;Malhotra, SS;Shen, JX;Hong, M;Kwo, J;Chen, HS;Mannaerts, JP; Liou, Sy\\_Hwang; Malhotra, SS; Shen, JX; Hong, M; Kwo, J; Chen, HS; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:33Z GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:11:35Z TRANSMISSION ELECTRON-MICROSCOPY STUDY OF INTERMETALLIC COMPOUND FE3ALXSI1-X EPITAXIALLY GROWN ON GAAS Hsieh, YF;Hong, M;Kwo, J;Kortan, AR;Chen, HS;Mannaerts, JP; Hsieh, YF; Hong, M; Kwo, J; Kortan, AR; Chen, HS; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:11:35Z Single-crystal GaN/Gd2O3/GaN heterostructure MINGHWEI HONG; Lee, CM; Chyi, JI; Anselm, KA; Cho, AY; Ng, HM; Kortan, AR; Mannaerts, JP; Chu, SNG; Kwo, J; Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M
臺大學術典藏 2018-09-10T04:11:34Z DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, KK;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; Bude, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:11:33Z Advances in high & kappa gate dielectrics for Si and III-V semiconductors Kwo, J;Hong, M;Busch, B;Muller, DA;Chabal, YJ;Kortan, AR;Mannaerts, JP;Yang, B;Ye, P;Gossmann, H;others; Kwo, J; Hong, M; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:11:33Z Electrical characteristics of ultrathin Pt/Y 2 O 3/Si capacitor with rapid post-metallisation annealing Lay, TS;Liu, WD;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liu, WD; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:11:33Z Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, K;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:11:32Z GaN/Gd2O3/GaN Single Crystal Heterostructure Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:11:32Z Magnetic Properties of Epitaxial Single Crystal Ultrathin Fe sub 3 Si Films on GaAs(001) Liou, SH; Malhotra, SS; Shen, JX; Hong, M; Kwo, J; Chen, HS; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:46:47Z MBE growth and properties of Fe 3 (Al, Si) on GaAs (100) Hong, M; Chen, HS; Kwo, J; Kortan, AR; Mannaerts, JP; Weir, BE; Feldman, LC; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:46:47Z Interface reactions of high-k Y2O3 gate oxides with Si Busch, BW;Kwo, J;Hong, M;Mannaerts, JP;Sapjeta, BJ;Schulte, WH;Garfunkel, E;Gustafsson, T; Busch, BW; Kwo, J; Hong, M; Mannaerts, JP; Sapjeta, BJ; Schulte, WH; Garfunkel, E; Gustafsson, T; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:46:47Z Insitu growth and properties of single-crystalline-like La2- xSrxCuO4 epitaxial films by off-axis sputtering Kao, HL; Kwo, J; Fleming, RM; Hong, M; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:46:47Z Magnetic rare earth superlattices MINGHWEI HONG; Majkrzak, CF; Kwo, J; Hong, M; Yafet, Y; Gibbs, Doon; Chien, CL; Bohr, Jakob
臺大學術典藏 2018-09-10T03:46:47Z Properties of high k gate dielectrics Gd2O3 and Y2O3 for Si MINGHWEI HONG; others; Lay, TS; Sapjeta, BJ; Chu, SNG; Muller, DA; Opila, RL; Chabal, YJ; Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal, YJ;Opila, RL;Muller, DA;Chu, SNG;Sapjeta, BJ;Lay, TS;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL
臺大學術典藏 2018-09-10T03:46:46Z New phase formation of Gd2O3 films on GaAs (100) Kortan, AR;Hong, M;Kwo, J;Mannaerts, JP;Krajewski, JJ;Kopylov, N;Steiner, C;Bolliger, B;Erbudak, M; Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Krajewski, JJ; Kopylov, N; Steiner, C; Bolliger, B; Erbudak, M; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:46:46Z CV and GV characterisation of Ga 2 O 3 (Gd 2 O 3)/GaN capacitor with low interface state density Lay, TS;Liu, WD;Hong, M;Kwo, J;Mannaerts, JP; MINGHWEI HONG; Lay, TS; Liu, WD; Hong, M; Kwo, J; Mannaerts, JP
臺大學術典藏 2018-09-10T03:46:45Z Energy Offsets at Ga_2O_3 (Gd_2O_3)/GaAs and Ga_2O_3 (Gd_2O_3)/GaN interfaces Lay, TS;Hong, M;Kwo, J;Mannaerts, JP;Hung, WH; Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, WH; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:46:45Z Properties of High kappa Gate Dielectrics Gd_2O_3, Y_2O_3, and yttria stabilized ZrO2 for Si Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal Opila Jr, YJ;Muller, DA;Chu, SNG;Sapjeta, BJ;Mannaerts, JP;Boone, T;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal Opila Jr, YJ; Muller, DA; Chu, SNG; Sapjeta, BJ; Mannaerts, JP; Boone, T; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:46:45Z Probing the microscopic compositions at Ga 2 O 3 (Gd 2 O 3)/GaAs interface by core level photoelectron spectroscopy Lay, TS;Huang, KH;Hung, Wei-Hsiu;Hong, M;Kwo, J;Mannaerts, JP; Lay, TS; Huang, KH; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:46:44Z In situ growth and properties of single-crystalline-like La 2-x Sr x CuO 4 epitaxial films by off-axis sputtering (US) Kao, HL; Kwo, J; Fleming, RM; Hong, M; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:46:44Z Structure of Gd_2O3 films on GaAs (100) Kortan, AR;Hong, M;Kwo, J;Mannaerts, JP;Krajewski, JJ;Kopylov, N;Steiner, C;Bolliger, B;Erbudak, M;others; Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Krajewski, JJ; Kopylov, N; Steiner, C; Bolliger, B; Erbudak, M; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:46:44Z GaAs MOSFET-Materials Physics and Devices Hong, M;Kwo, J;Kortan, AR;Mannaerts, JP;Wang, YC;Lay, TS; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wang, YC; Lay, TS; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:46:43Z A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectors Hong, M; Mannaerts, JP; Hong, JM; Fischer, RJ; Tai, K; Kwo, J; V; enberg, JM; Wang, YH; Gamelin, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:46:42Z CV and GV characterisation of Ga^ sub 2^ O^ sub 3^(Gd^ sup 2^ O^ sub 3^)/GaN capacitor with low interface state density Lay, TS;Liu, WD;Hong, M;Kwo, J;Mannaerts, JP; Lay, TS; Liu, WD; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:36Z Initial growth of Gã 2Õ 3 (Gd̃ 2Õ 3) on GaAs: Key to the attainment of a low interfacial density of states Hong, M; Lu, ZH; Kwo, J; Kortan, AR; Mannaerts, JP; Krajewski, JJ; Hsieh, KC; Chou, LJ; Cheng, KY; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:36Z High E gate dielectrics Gd2O3 and Y2O3 for silicon Boone, T; Krajewski, JJ; Sergent, AM; Rosamilia, JM; MINGHWEI HONG; Mannaerts, JP; Kwo, J; Hong, M; Kortan, AR; Queeney, KT; Chabal, YJ
臺大學術典藏 2018-09-10T03:28:35Z First demonstration of GaAs CMOS Hong, M; Baillargeon, JN; Kwo, J; Mannaerts, JP; Cho, AY; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:35Z Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:35Z Observations of quasi-particle tunneling and Josephson behavior in Y1Ba2Cu3O7- x/native barrier/Pb thin-film junctions Kwo, J;Fulton, TA;Hong, M;Gammel, PL; Kwo, J; Fulton, TA; Hong, M; Gammel, PL; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:35Z Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:35Z Magnetic properties of Gd/Dy superlattices: Experiment and theory Camley, RE;Kwo, J;Hong, M;Chien, CL; Camley, RE; Kwo, J; Hong, M; Chien, CL; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:34Z A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs Gila, BP; Lee, KN; Johnson, W; Ren, F; Abernathy, CR; Pearton, SJ; Hong, M; Kwo, J; Mannaerts, JP; Anselm, KA; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:34Z Structural modifications of the Gd 2 O 3 (110) films on GaAs (100) Steiner, C; Bolliger, B; Erbudak, M; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:34Z Structure of epitaxial Gd2O3 films and their registry on GaAs (100) substrates Bolliger, B; Erbudak, M; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:33Z Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:33Z Insulator/GaN Heterostructures of Low Interfacial Density of States Hong, M; Ng, HM; Kwo, J; Kortan, AR; Baillargeon, JN; Anselm, KA; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:33Z Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:32Z Single crystal rare earth oxides epitaxially grown on GaN Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, CM; Chyi, JL; MINGHWEI HONG

Showing items 451-500 of 563  (12 Page(s) Totally)
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