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"kwo j"的相關文件
顯示項目 471-520 / 563 (共12頁)
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| 臺大學術典藏 |
2018-09-10T04:11:32Z |
Magnetic Properties of Epitaxial Single Crystal Ultrathin Fe sub 3 Si Films on GaAs(001)
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Liou, SH; Malhotra, SS; Shen, JX; Hong, M; Kwo, J; Chen, HS; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:47Z |
MBE growth and properties of Fe 3 (Al, Si) on GaAs (100)
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Hong, M; Chen, HS; Kwo, J; Kortan, AR; Mannaerts, JP; Weir, BE; Feldman, LC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:47Z |
Interface reactions of high-k Y2O3 gate oxides with Si
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Busch, BW;Kwo, J;Hong, M;Mannaerts, JP;Sapjeta, BJ;Schulte, WH;Garfunkel, E;Gustafsson, T; Busch, BW; Kwo, J; Hong, M; Mannaerts, JP; Sapjeta, BJ; Schulte, WH; Garfunkel, E; Gustafsson, T; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:47Z |
Insitu growth and properties of single-crystalline-like La2- xSrxCuO4 epitaxial films by off-axis sputtering
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Kao, HL; Kwo, J; Fleming, RM; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:47Z |
Magnetic rare earth superlattices
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MINGHWEI HONG; Majkrzak, CF; Kwo, J; Hong, M; Yafet, Y; Gibbs, Doon; Chien, CL; Bohr, Jakob |
| 臺大學術典藏 |
2018-09-10T03:46:47Z |
Properties of high k gate dielectrics Gd2O3 and Y2O3 for Si
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MINGHWEI HONG; others; Lay, TS; Sapjeta, BJ; Chu, SNG; Muller, DA; Opila, RL; Chabal, YJ; Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal, YJ;Opila, RL;Muller, DA;Chu, SNG;Sapjeta, BJ;Lay, TS;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL |
| 臺大學術典藏 |
2018-09-10T03:46:46Z |
New phase formation of Gd2O3 films on GaAs (100)
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Kortan, AR;Hong, M;Kwo, J;Mannaerts, JP;Krajewski, JJ;Kopylov, N;Steiner, C;Bolliger, B;Erbudak, M; Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Krajewski, JJ; Kopylov, N; Steiner, C; Bolliger, B; Erbudak, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:46Z |
CV and GV characterisation of Ga 2 O 3 (Gd 2 O 3)/GaN capacitor with low interface state density
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Lay, TS;Liu, WD;Hong, M;Kwo, J;Mannaerts, JP; MINGHWEI HONG; Lay, TS; Liu, WD; Hong, M; Kwo, J; Mannaerts, JP |
| 臺大學術典藏 |
2018-09-10T03:46:45Z |
Energy Offsets at Ga_2O_3 (Gd_2O_3)/GaAs and Ga_2O_3 (Gd_2O_3)/GaN interfaces
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Lay, TS;Hong, M;Kwo, J;Mannaerts, JP;Hung, WH; Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, WH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:45Z |
Properties of High kappa Gate Dielectrics Gd_2O_3, Y_2O_3, and yttria stabilized ZrO2 for Si
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Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal Opila Jr, YJ;Muller, DA;Chu, SNG;Sapjeta, BJ;Mannaerts, JP;Boone, T;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal Opila Jr, YJ; Muller, DA; Chu, SNG; Sapjeta, BJ; Mannaerts, JP; Boone, T; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:45Z |
Probing the microscopic compositions at Ga 2 O 3 (Gd 2 O 3)/GaAs interface by core level photoelectron spectroscopy
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Lay, TS;Huang, KH;Hung, Wei-Hsiu;Hong, M;Kwo, J;Mannaerts, JP; Lay, TS; Huang, KH; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:44Z |
In situ growth and properties of single-crystalline-like La 2-x Sr x CuO 4 epitaxial films by off-axis sputtering (US)
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Kao, HL; Kwo, J; Fleming, RM; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:44Z |
Structure of Gd_2O3 films on GaAs (100)
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Kortan, AR;Hong, M;Kwo, J;Mannaerts, JP;Krajewski, JJ;Kopylov, N;Steiner, C;Bolliger, B;Erbudak, M;others; Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Krajewski, JJ; Kopylov, N; Steiner, C; Bolliger, B; Erbudak, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:44Z |
GaAs MOSFET-Materials Physics and Devices
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Hong, M;Kwo, J;Kortan, AR;Mannaerts, JP;Wang, YC;Lay, TS; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wang, YC; Lay, TS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:43Z |
A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectors
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Hong, M; Mannaerts, JP; Hong, JM; Fischer, RJ; Tai, K; Kwo, J; V; enberg, JM; Wang, YH; Gamelin, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:42Z |
CV and GV characterisation of Ga^ sub 2^ O^ sub 3^(Gd^ sup 2^ O^ sub 3^)/GaN capacitor with low interface state density
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Lay, TS;Liu, WD;Hong, M;Kwo, J;Mannaerts, JP; Lay, TS; Liu, WD; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:36Z |
Initial growth of Gã 2Õ 3 (Gd̃ 2Õ 3) on GaAs: Key to the attainment of a low interfacial density of states
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Hong, M; Lu, ZH; Kwo, J; Kortan, AR; Mannaerts, JP; Krajewski, JJ; Hsieh, KC; Chou, LJ; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:36Z |
High E gate dielectrics Gd2O3 and Y2O3 for silicon
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Boone, T; Krajewski, JJ; Sergent, AM; Rosamilia, JM; MINGHWEI HONG; Mannaerts, JP; Kwo, J; Hong, M; Kortan, AR; Queeney, KT; Chabal, YJ |
| 臺大學術典藏 |
2018-09-10T03:28:35Z |
First demonstration of GaAs CMOS
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Hong, M; Baillargeon, JN; Kwo, J; Mannaerts, JP; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:35Z |
Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions
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Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:35Z |
Observations of quasi-particle tunneling and Josephson behavior in Y1Ba2Cu3O7- x/native barrier/Pb thin-film junctions
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Kwo, J;Fulton, TA;Hong, M;Gammel, PL; Kwo, J; Fulton, TA; Hong, M; Gammel, PL; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:35Z |
Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes
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Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:35Z |
Magnetic properties of Gd/Dy superlattices: Experiment and theory
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Camley, RE;Kwo, J;Hong, M;Chien, CL; Camley, RE; Kwo, J; Hong, M; Chien, CL; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:34Z |
A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs
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Gila, BP; Lee, KN; Johnson, W; Ren, F; Abernathy, CR; Pearton, SJ; Hong, M; Kwo, J; Mannaerts, JP; Anselm, KA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:34Z |
Structural modifications of the Gd 2 O 3 (110) films on GaAs (100)
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Steiner, C; Bolliger, B; Erbudak, M; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:34Z |
Structure of epitaxial Gd2O3 films and their registry on GaAs (100) substrates
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Bolliger, B; Erbudak, M; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes
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Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
Insulator/GaN Heterostructures of Low Interfacial Density of States
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Hong, M; Ng, HM; Kwo, J; Kortan, AR; Baillargeon, JN; Anselm, KA; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions
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Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:32Z |
Single crystal rare earth oxides epitaxially grown on GaN
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Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, CM; Chyi, JL; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:32Z |
Observations of quasi-particle tunneling and Josephson behavior in Y sub 1 Ba sub 2 Cu sub 3 O sub 7 minus x/native barrier/Pb thin-film junctions
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Kwo, J;Fulton, TA;Hong, M;Gammel, PL; Kwo, J; Fulton, TA; Hong, M; Gammel, PL; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:32Z |
RAPID COMMUNICATIONS-Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Structural modifications of the Gd2O3 (110) films on GaAs (100)
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Steiner, C; Bolliger, B; Erbudak, M; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:32Z |
New High $ɛ$ Gate Dielectrics Gd_2O3 and Y_2O3 for Si
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Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal, YJ; Lay, TS; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:31Z |
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd2O3 on GaAs (001)
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Nelson, EJ; Woicik, JC; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:31Z |
in-V MOSFET Using Ga203/Gd203 As The Gate Oxide
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Ren, F; Hong, M; Wang, YC; Kwo, J; Mannaerts, JP; Abernathy, CR; Pearton, SJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:30Z |
Materials and Tunneling Characteristics of HTSC Y1Ba2Cu3O7-x Thin Films by Molecular Beam Epitaxy
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Kwo, J;Hong, Minghwei;Fulton, TA;Gammel, PL;Mannaerts, JP; Kwo, J; Hong, Minghwei; Fulton, TA; Gammel, PL; Mannaerts, JP; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:48:27Z |
H(2)S molecular beam passivation of Ge(001)
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Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; Brammertz, G.; Hong, M.; Kwo, J.; Meuris, M.; Dekoster, J.; Heyns, M. M.; Caymax, M. |
| 國立交通大學 |
2014-12-08T15:47:43Z |
Structural Characteristics of Nanometer Thick Gd(2)O(3) Films Grown on GaN (0001)
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Chang, W. H.; Chang, P.; Lai, T. Y.; Lee, Y. J.; Kwo, J.; Hsu, C-H; Hong, M. |
| 國立交通大學 |
2014-12-08T15:46:42Z |
MBE-Enabling technology beyond Si CMOS
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Chang, P.; Lee, W. C.; Lin, T. D.; Hsu, C. H.; Kwo, J.; Hong, M. |
| 國立交通大學 |
2014-12-08T15:46:02Z |
Epitaxial stabilization of a monoclinic phase in Y(2)O(3) films on c-plane GaN
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Chang, W. H.; Chang, P.; Lee, W. C.; Lai, T. Y.; Kwo, J.; Hsu, C. -H.; Hong, J. M.; Hong, M. |
| 國立交通大學 |
2014-12-08T15:30:46Z |
The Growth of an Epitaxial ZnO Film on Si(111) with a Gd(2)O(3)(Ga(2)O(3)) Buffer Layer
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Lin, B. H.; Liu, W. R.; Yang, S.; Kuo, C. C.; Hsu, C. -H.; Hsieh, W. F.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J. |
| 國立交通大學 |
2014-12-08T15:29:55Z |
Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y2O3-buffered Si (111)
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Kuo, C. C.; Liu, W. -R.; Lin, B. H.; Hsieh, W. F.; Hsu, C. -H.; Lee, W. C.; Hong, M.; Kwo, J. |
| 國立交通大學 |
2014-12-08T15:28:21Z |
Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111)
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Liu, W. -R.; Lin, B. H.; Kuo, C. C.; Lee, W. C.; Hong, M.; Kwo, J.; Hsu, C. -H.; Hsieh, W. F. |
| 國立交通大學 |
2014-12-08T15:26:43Z |
Defect density reduction of the Al(2)O(3)/GaAs(001) interface by using H(2)S molecular beam passivation
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Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M. |
| 國立交通大學 |
2014-12-08T15:21:30Z |
The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a gamma-Al2O3 buffer layer
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Liu, W. -R.; Lin, B. H.; Yang, S.; Kuo, C. C.; Li, Y. -H.; Hsu, C. -H.; Hsieh, W. F.; Lee, W. C.; Hong, M.; Kwo, J. |
| 國立交通大學 |
2014-12-08T15:15:47Z |
Structure of HfO2 films epitaxially grown on GaAs(001)
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Hsu, C. -H.; Chang, P.; Lee, W. C.; Yang, Z. K.; Lee, Y. J.; Hong, M.; Kwo, J.; Huang, C. M.; Lee, H. Y. |
| 國立交通大學 |
2014-12-08T15:12:26Z |
Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si(111) using a gamma-Al(2)O(3) buffer layer
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Liu, W-R; Li, Y-H; Hsieh, W. F.; Hsu, C-H; Lee, W. C.; Hong, M.; Kwo, J. |
| 國立交通大學 |
2014-12-08T15:12:14Z |
Growth and structural characteristics of GaN/AlN/nanothick gamma-Al(2)O(3)/Si (111)
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Lee, W. C.; Lee, Y. J.; Tung, L. T.; Wu, S. Y.; Lee, C. H.; Hong, M.; Ng, H. M.; Kwo, J.; Hsu, C. H. |
| 國立交通大學 |
2014-12-08T15:12:14Z |
High-quality nanothick single-crystal Y(2)O(3) films epitaxially grown on Si (111): Growth and structural characteristics
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Lee, Y. J.; Lee, W. C.; Nieh, C. W.; Yang, Z. K.; Kortan, A. R.; Hong, M.; Kwo, J.; Hsu, C. -H. |
| 國立交通大學 |
2014-12-08T15:10:10Z |
Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y(2)O(3) Buffer Layer on Si (111)
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Liu, W. -R.; Li, Y. -H.; Hsieh, W. F.; Hsu, C. -H.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J. |
顯示項目 471-520 / 563 (共12頁)
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