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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Showing items 491-515 of 563  (23 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T03:28:35Z Observations of quasi-particle tunneling and Josephson behavior in Y1Ba2Cu3O7- x/native barrier/Pb thin-film junctions Kwo, J;Fulton, TA;Hong, M;Gammel, PL; Kwo, J; Fulton, TA; Hong, M; Gammel, PL; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:35Z Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:35Z Magnetic properties of Gd/Dy superlattices: Experiment and theory Camley, RE;Kwo, J;Hong, M;Chien, CL; Camley, RE; Kwo, J; Hong, M; Chien, CL; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:34Z A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs Gila, BP; Lee, KN; Johnson, W; Ren, F; Abernathy, CR; Pearton, SJ; Hong, M; Kwo, J; Mannaerts, JP; Anselm, KA; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:34Z Structural modifications of the Gd 2 O 3 (110) films on GaAs (100) Steiner, C; Bolliger, B; Erbudak, M; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:34Z Structure of epitaxial Gd2O3 films and their registry on GaAs (100) substrates Bolliger, B; Erbudak, M; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:33Z Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:33Z Insulator/GaN Heterostructures of Low Interfacial Density of States Hong, M; Ng, HM; Kwo, J; Kortan, AR; Baillargeon, JN; Anselm, KA; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:33Z Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:32Z Single crystal rare earth oxides epitaxially grown on GaN Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, CM; Chyi, JL; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:32Z Observations of quasi-particle tunneling and Josephson behavior in Y sub 1 Ba sub 2 Cu sub 3 O sub 7 minus x/native barrier/Pb thin-film junctions Kwo, J;Fulton, TA;Hong, M;Gammel, PL; Kwo, J; Fulton, TA; Hong, M; Gammel, PL; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:32Z RAPID COMMUNICATIONS-Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Structural modifications of the Gd2O3 (110) films on GaAs (100) Steiner, C; Bolliger, B; Erbudak, M; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:32Z New High $ɛ$ Gate Dielectrics Gd_2O3 and Y_2O3 for Si Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal, YJ; Lay, TS; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:31Z STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd2O3 on GaAs (001) Nelson, EJ; Woicik, JC; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:31Z in-V MOSFET Using Ga203/Gd203 As The Gate Oxide Ren, F; Hong, M; Wang, YC; Kwo, J; Mannaerts, JP; Abernathy, CR; Pearton, SJ; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:30Z Materials and Tunneling Characteristics of HTSC Y1Ba2Cu3O7-x Thin Films by Molecular Beam Epitaxy Kwo, J;Hong, Minghwei;Fulton, TA;Gammel, PL;Mannaerts, JP; Kwo, J; Hong, Minghwei; Fulton, TA; Gammel, PL; Mannaerts, JP; MINGHWEI HONG
國立交通大學 2014-12-08T15:48:27Z H(2)S molecular beam passivation of Ge(001) Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; Brammertz, G.; Hong, M.; Kwo, J.; Meuris, M.; Dekoster, J.; Heyns, M. M.; Caymax, M.
國立交通大學 2014-12-08T15:47:43Z Structural Characteristics of Nanometer Thick Gd(2)O(3) Films Grown on GaN (0001) Chang, W. H.; Chang, P.; Lai, T. Y.; Lee, Y. J.; Kwo, J.; Hsu, C-H; Hong, M.
國立交通大學 2014-12-08T15:46:42Z MBE-Enabling technology beyond Si CMOS Chang, P.; Lee, W. C.; Lin, T. D.; Hsu, C. H.; Kwo, J.; Hong, M.
國立交通大學 2014-12-08T15:46:02Z Epitaxial stabilization of a monoclinic phase in Y(2)O(3) films on c-plane GaN Chang, W. H.; Chang, P.; Lee, W. C.; Lai, T. Y.; Kwo, J.; Hsu, C. -H.; Hong, J. M.; Hong, M.
國立交通大學 2014-12-08T15:30:46Z The Growth of an Epitaxial ZnO Film on Si(111) with a Gd(2)O(3)(Ga(2)O(3)) Buffer Layer Lin, B. H.; Liu, W. R.; Yang, S.; Kuo, C. C.; Hsu, C. -H.; Hsieh, W. F.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J.
國立交通大學 2014-12-08T15:29:55Z Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y2O3-buffered Si (111) Kuo, C. C.; Liu, W. -R.; Lin, B. H.; Hsieh, W. F.; Hsu, C. -H.; Lee, W. C.; Hong, M.; Kwo, J.
國立交通大學 2014-12-08T15:28:21Z Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111) Liu, W. -R.; Lin, B. H.; Kuo, C. C.; Lee, W. C.; Hong, M.; Kwo, J.; Hsu, C. -H.; Hsieh, W. F.
國立交通大學 2014-12-08T15:26:43Z Defect density reduction of the Al(2)O(3)/GaAs(001) interface by using H(2)S molecular beam passivation Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M.
國立交通大學 2014-12-08T15:21:30Z The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a gamma-Al2O3 buffer layer Liu, W. -R.; Lin, B. H.; Yang, S.; Kuo, C. C.; Li, Y. -H.; Hsu, C. -H.; Hsieh, W. F.; Lee, W. C.; Hong, M.; Kwo, J.

Showing items 491-515 of 563  (23 Page(s) Totally)
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