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Showing items 496-545 of 563 (12 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T03:28:34Z	Structure of epitaxial Gd2O3 films and their registry on GaAs (100) substrates	Bolliger, B; Erbudak, M; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏	2018-09-10T03:28:33Z	Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes	Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T03:28:33Z	Insulator/GaN Heterostructures of Low Interfacial Density of States	Hong, M; Ng, HM; Kwo, J; Kortan, AR; Baillargeon, JN; Anselm, KA; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T03:28:33Z	Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions	Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG
臺大學術典藏	2018-09-10T03:28:32Z	Single crystal rare earth oxides epitaxially grown on GaN	Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, CM; Chyi, JL; MINGHWEI HONG
臺大學術典藏	2018-09-10T03:28:32Z	Observations of quasi-particle tunneling and Josephson behavior in Y sub 1 Ba sub 2 Cu sub 3 O sub 7 minus x/native barrier/Pb thin-film junctions	Kwo, J;Fulton, TA;Hong, M;Gammel, PL; Kwo, J; Fulton, TA; Hong, M; Gammel, PL; MINGHWEI HONG
臺大學術典藏	2018-09-10T03:28:32Z	RAPID COMMUNICATIONS-Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Structural modifications of the Gd2O3 (110) films on GaAs (100)	Steiner, C; Bolliger, B; Erbudak, M; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏	2018-09-10T03:28:32Z	New High $ɛ$ Gate Dielectrics Gd_2O3 and Y_2O3 for Si	Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal, YJ; Lay, TS; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T03:28:31Z	STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd2O3 on GaAs (001)	Nelson, EJ; Woicik, JC; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏	2018-09-10T03:28:31Z	in-V MOSFET Using Ga203/Gd203 As The Gate Oxide	Ren, F; Hong, M; Wang, YC; Kwo, J; Mannaerts, JP; Abernathy, CR; Pearton, SJ; MINGHWEI HONG
臺大學術典藏	2018-09-10T03:28:30Z	Materials and Tunneling Characteristics of HTSC Y1Ba2Cu3O7-x Thin Films by Molecular Beam Epitaxy	Kwo, J;Hong, Minghwei;Fulton, TA;Gammel, PL;Mannaerts, JP; Kwo, J; Hong, Minghwei; Fulton, TA; Gammel, PL; Mannaerts, JP; MINGHWEI HONG
國立交通大學	2014-12-08T15:48:27Z	H(2)S molecular beam passivation of Ge(001)	Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; Brammertz, G.; Hong, M.; Kwo, J.; Meuris, M.; Dekoster, J.; Heyns, M. M.; Caymax, M.
國立交通大學	2014-12-08T15:47:43Z	Structural Characteristics of Nanometer Thick Gd(2)O(3) Films Grown on GaN (0001)	Chang, W. H.; Chang, P.; Lai, T. Y.; Lee, Y. J.; Kwo, J.; Hsu, C-H; Hong, M.
國立交通大學	2014-12-08T15:46:42Z	MBE-Enabling technology beyond Si CMOS	Chang, P.; Lee, W. C.; Lin, T. D.; Hsu, C. H.; Kwo, J.; Hong, M.
國立交通大學	2014-12-08T15:46:02Z	Epitaxial stabilization of a monoclinic phase in Y(2)O(3) films on c-plane GaN	Chang, W. H.; Chang, P.; Lee, W. C.; Lai, T. Y.; Kwo, J.; Hsu, C. -H.; Hong, J. M.; Hong, M.
國立交通大學	2014-12-08T15:30:46Z	The Growth of an Epitaxial ZnO Film on Si(111) with a Gd(2)O(3)(Ga(2)O(3)) Buffer Layer	Lin, B. H.; Liu, W. R.; Yang, S.; Kuo, C. C.; Hsu, C. -H.; Hsieh, W. F.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J.
國立交通大學	2014-12-08T15:29:55Z	Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y2O3-buffered Si (111)	Kuo, C. C.; Liu, W. -R.; Lin, B. H.; Hsieh, W. F.; Hsu, C. -H.; Lee, W. C.; Hong, M.; Kwo, J.
國立交通大學	2014-12-08T15:28:21Z	Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111)	Liu, W. -R.; Lin, B. H.; Kuo, C. C.; Lee, W. C.; Hong, M.; Kwo, J.; Hsu, C. -H.; Hsieh, W. F.
國立交通大學	2014-12-08T15:26:43Z	Defect density reduction of the Al(2)O(3)/GaAs(001) interface by using H(2)S molecular beam passivation	Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M.
國立交通大學	2014-12-08T15:21:30Z	The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a gamma-Al2O3 buffer layer	Liu, W. -R.; Lin, B. H.; Yang, S.; Kuo, C. C.; Li, Y. -H.; Hsu, C. -H.; Hsieh, W. F.; Lee, W. C.; Hong, M.; Kwo, J.
國立交通大學	2014-12-08T15:15:47Z	Structure of HfO2 films epitaxially grown on GaAs(001)	Hsu, C. -H.; Chang, P.; Lee, W. C.; Yang, Z. K.; Lee, Y. J.; Hong, M.; Kwo, J.; Huang, C. M.; Lee, H. Y.
國立交通大學	2014-12-08T15:12:26Z	Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si(111) using a gamma-Al(2)O(3) buffer layer	Liu, W-R; Li, Y-H; Hsieh, W. F.; Hsu, C-H; Lee, W. C.; Hong, M.; Kwo, J.
國立交通大學	2014-12-08T15:12:14Z	Growth and structural characteristics of GaN/AlN/nanothick gamma-Al(2)O(3)/Si (111)	Lee, W. C.; Lee, Y. J.; Tung, L. T.; Wu, S. Y.; Lee, C. H.; Hong, M.; Ng, H. M.; Kwo, J.; Hsu, C. H.
國立交通大學	2014-12-08T15:12:14Z	High-quality nanothick single-crystal Y(2)O(3) films epitaxially grown on Si (111): Growth and structural characteristics	Lee, Y. J.; Lee, W. C.; Nieh, C. W.; Yang, Z. K.; Kortan, A. R.; Hong, M.; Kwo, J.; Hsu, C. -H.
國立交通大學	2014-12-08T15:10:10Z	Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y(2)O(3) Buffer Layer on Si (111)	Liu, W. -R.; Li, Y. -H.; Hsieh, W. F.; Hsu, C. -H.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J.
國立交通大學	2014-12-08T15:07:03Z	Al(2)O(3)/Ga(2)O(3)(Gd(2)O(3)) passivation on In(0.20)Ga(0.80)As/GaAs-structural intactness with high-temperature annealing	Lee, Y. J.; Lee, C. H.; Tung, L. T.; Chiang, T. H.; Lai, T. Y.; Kwo, J.; Hsu, C-H; Hong, M.
臺大學術典藏	2014	Observation of strongly enhanced inverse spin Hall voltage in Fe3Si/GaAs structures	Hung, H. Y.; Chiang, T. H.; Syu, B. Z.; Fanchiang, Y. T.; Lin, J. G.; Lee, S. F.; Hong, M.; Kwo, J.
臺大學術典藏	2013	Ferromagnetism in cluster free, transition metal doped high $κ$ dilute magnetic oxides: Films and nanocrystals	Wu, CN;Wu, TS;Huang, SY;Lee, WC;Chang, YH;Soo, YL;Hong, M;Kwo, J; Wu, CN; Wu, TS; Huang, SY; Lee, WC; Chang, YH; Soo, YL; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏	2013	Detection of inverse spin Hall effect in epitaxial ferromagnetic Fe 3Si films with normal metals Au and Pt	Chiu, Y. C.; Chang, P.; Lee, W. C.; Lin, J. G.; Lee, S. F.; Hong, M.; Kwo, J.; Luo, G. Y.; Hung, H. Y.
國立成功大學	2012	The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a gamma-Al2O3 buffer layer	Liu, W. -R.; Lin, B. H.; Yang, S.; Kuo, C. C.; Li, Y. -H.; Hsu, C. -H.; Hsieh, W. F.; Lee, W. C.; Hong, M.; Kwo, J.
國立臺灣大學	2012	Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition	Lin, T.D.; Chang, Y.H.; Lin, C.A.; Huang, M.L.; Lee, W.C.; Kwo, J.; Hong, M.
國立臺灣大學	2012	Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device	Chang, W.H.; Chiang, T.H.; Lin, T.D.; Chen, Y.H.; Wu, K.H.; Huang, T.S.; Hong, M.; Kwo, J.
國立臺灣大學	2012	InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics	Lin, C.A.; Huang, M.L.; Chiu, P.-C.; Lin, H.-K.; Chyi, J.-I.; Chiang, T.H.; Lee, W.C.; Chang, Y.C.; Chang, Y.H.; Brown, G.J.; Kwo, J.; Hong, M.
國立臺灣大學	2012	Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric	Chu, L.K.; Chiang, T.H.; Lin, T.D.; Lee, Y.J.; Chu, R.L.; Kwo, J.; Hong, M.
國立政治大學	2011-11	Intrinsic Spin-Dependent Thermal Transport	李尚凡; Huang,S. Y. ; Wang,W. G. ; S. F. Lee; Kwo,J. ; Chien,C. L.
國立成功大學	2011-05-04	The Growth of an Epitaxial ZnO Film on Si(111) with a Gd(2)O(3)(Ga(2)O(3)) Buffer Layer	Lin, B. H.; Liu, W. R.; Yang, S.; Kuo, C. C.; Hsu, C. -H.; Hsieh, W. F.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J.
國立政治大學	2011-04	Magnetization reversal processes of epitaxial Fe3Si films on GaAs(001)	李尚凡; Liu, Y.C.;Chang, P.;Huang, S.Y.;Chang, L.J.;Lin, W.C. ; Lee, S.F. ; Hong, M. ; Kwo, J.
國立政治大學	2011	Demonstration of edge roughness effect on the magnetization reversal of spin valve submicron wires	李尚凡; Hung,H.Y. ;Huang,S.Y. ;Chang,P. ;Lin,W.C. ;Liu,Y.C. ;Lee,S.F. ;Hong,M. ;Kwo,J.
國立臺灣大學	2011	Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy	Chiu, Y.P.; Huang, B.C.; Shih, M.C.; Shen, J.Y.; Chang, P.; Chang, C.S.; Huang, M.L.; Tsai, M.-H.; Hong, M.; Kwo, J.
臺大學術典藏	2011	Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy	Chiu, Y.P.;Huang, B.C.;Shih, M.C.;Shen, J.Y.;Chang, P.;Chang, C.S.;Huang, M.L.;Tsai, M.-H.;Hong, M.;Kwo, J.; Chiu, Y.P.; Huang, B.C.; Shih, M.C.; Shen, J.Y.; Chang, P.; Chang, C.S.; Huang, M.L.; Tsai, M.-H.; Hong, M.; Kwo, J.; YA-PING CHIU
臺大學術典藏	2010	Self-aligned inversion-channel In0.75Ga0.25As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2O3/Ga2O3(Gd2O 3) and ALD-Al2O3 as gate dielectrics	Lin, T.D.;Chiu, H.C.;Chang, P.;Chang, Y.H.;Wu, Y.D.;Hong, M.;Kwo, J.; Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG
國立成功大學	2009-01	Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y2O3 Buffer Layer on Si (111)	Liu, W. R.; Li, Y. H.; Hsieh, W. F.; Hsu, C. H.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J.
臺大學術典藏	2009	Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics	Lin, C.A.;Lin, T.D.;Chiang, T.H.;Chiu, H.C.;Chang, P.;Hong, M.;Kwo, J.; Lin, C.A.; Lin, T.D.; Chiang, T.H.; Chiu, H.C.; Chang, P.; Hong, M.; Kwo, J.; MINGHWEI HONG
國立成功大學	2008-03	Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si(111) using a gamma-Al2O3 buffer layer	Liu, W. R.; Li, Y. H.; Hsieh, Wen-Feng; Hsu, C. H.; Lee, W. C.; Hong, M.; Kwo, J.
臺大學術典藏	2008	Time dependent preferential sputtering in the HfO 2 layer on Si (100)	MINGHWEI HONG; Kwo, J; Hong, M; Hwang, J; Lee, WC; Chang, SJ
臺大學術典藏	2008	High-quality nanothick single-crystal Y2 O3 films epitaxially grown on Si (111): Growth and structural characteristics	Lee, Y.J.;Lee, W.C.;Nieh, C.W.;Yang, Z.K.;Kortan, A.R.;Hong, M.;Kwo, J.;Hsu, C.-H.; Lee, Y.J.; Lee, W.C.; Nieh, C.W.; Yang, Z.K.; Kortan, A.R.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG
國立成功大學	2007-06-04	Structural and electrical characteristics of atomic layer deposited high kappa HfO2 on GaN	Chang, Y. C.; Chiu, H. C.; Lee, Y. J.; Huang, M. L.; Lee, K. Y.; Hong, M.; Chiu, Y. N.; Kwo, J.; Wang, Yeong-Her
國立成功大學	2007-04	MBE grown high kappa dielectrics Ga2O3(Gd2O3) on GaN	Chang, Yao-Chung; Lee, Y. J.; Chiu, Y. N.; Lin, Tsung-Da; Wu, S. Y.; Chiu, Han-Chin; Kwo, J.; Wang, Yeong-Her; Hong, Minghwei
臺大學術典藏	2006	Structural Investigation of Epitaxial HfO2 Films by X-ray Scattering	Hsu, CH; Yang, ZK; Chang, P; Hong, M; Kwo, J; Huang, Chih-Mao; Lee, Hsin-Yi; MINGHWEI HONG
臺大學術典藏	2006	Energy-band parameters of atomic-layer-deposition Al2O 3/InGaAs heterostructure	MINGHWEI HONG; Hong, M.; Wu, T.B.; Kwo, J.; Lin, T.D.; Chang, C.H.; Chang, Y.C.; Huang, M.L.

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