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Institution	Date	Title	Author
國立交通大學	2014-12-08T15:15:47Z	Structure of HfO2 films epitaxially grown on GaAs(001)	Hsu, C. -H.; Chang, P.; Lee, W. C.; Yang, Z. K.; Lee, Y. J.; Hong, M.; Kwo, J.; Huang, C. M.; Lee, H. Y.
國立交通大學	2014-12-08T15:12:26Z	Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si(111) using a gamma-Al(2)O(3) buffer layer	Liu, W-R; Li, Y-H; Hsieh, W. F.; Hsu, C-H; Lee, W. C.; Hong, M.; Kwo, J.
國立交通大學	2014-12-08T15:12:14Z	Growth and structural characteristics of GaN/AlN/nanothick gamma-Al(2)O(3)/Si (111)	Lee, W. C.; Lee, Y. J.; Tung, L. T.; Wu, S. Y.; Lee, C. H.; Hong, M.; Ng, H. M.; Kwo, J.; Hsu, C. H.
國立交通大學	2014-12-08T15:12:14Z	High-quality nanothick single-crystal Y(2)O(3) films epitaxially grown on Si (111): Growth and structural characteristics	Lee, Y. J.; Lee, W. C.; Nieh, C. W.; Yang, Z. K.; Kortan, A. R.; Hong, M.; Kwo, J.; Hsu, C. -H.
國立交通大學	2014-12-08T15:10:10Z	Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y(2)O(3) Buffer Layer on Si (111)	Liu, W. -R.; Li, Y. -H.; Hsieh, W. F.; Hsu, C. -H.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J.
國立交通大學	2014-12-08T15:07:03Z	Al(2)O(3)/Ga(2)O(3)(Gd(2)O(3)) passivation on In(0.20)Ga(0.80)As/GaAs-structural intactness with high-temperature annealing	Lee, Y. J.; Lee, C. H.; Tung, L. T.; Chiang, T. H.; Lai, T. Y.; Kwo, J.; Hsu, C-H; Hong, M.
臺大學術典藏	2014	Observation of strongly enhanced inverse spin Hall voltage in Fe3Si/GaAs structures	Hung, H. Y.; Chiang, T. H.; Syu, B. Z.; Fanchiang, Y. T.; Lin, J. G.; Lee, S. F.; Hong, M.; Kwo, J.
臺大學術典藏	2013	Ferromagnetism in cluster free, transition metal doped high $κ$ dilute magnetic oxides: Films and nanocrystals	Wu, CN;Wu, TS;Huang, SY;Lee, WC;Chang, YH;Soo, YL;Hong, M;Kwo, J; Wu, CN; Wu, TS; Huang, SY; Lee, WC; Chang, YH; Soo, YL; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏	2013	Detection of inverse spin Hall effect in epitaxial ferromagnetic Fe 3Si films with normal metals Au and Pt	Chiu, Y. C.; Chang, P.; Lee, W. C.; Lin, J. G.; Lee, S. F.; Hong, M.; Kwo, J.; Luo, G. Y.; Hung, H. Y.
國立成功大學	2012	The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a gamma-Al2O3 buffer layer	Liu, W. -R.; Lin, B. H.; Yang, S.; Kuo, C. C.; Li, Y. -H.; Hsu, C. -H.; Hsieh, W. F.; Lee, W. C.; Hong, M.; Kwo, J.
國立臺灣大學	2012	Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition	Lin, T.D.; Chang, Y.H.; Lin, C.A.; Huang, M.L.; Lee, W.C.; Kwo, J.; Hong, M.
國立臺灣大學	2012	Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device	Chang, W.H.; Chiang, T.H.; Lin, T.D.; Chen, Y.H.; Wu, K.H.; Huang, T.S.; Hong, M.; Kwo, J.
國立臺灣大學	2012	InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics	Lin, C.A.; Huang, M.L.; Chiu, P.-C.; Lin, H.-K.; Chyi, J.-I.; Chiang, T.H.; Lee, W.C.; Chang, Y.C.; Chang, Y.H.; Brown, G.J.; Kwo, J.; Hong, M.
國立臺灣大學	2012	Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric	Chu, L.K.; Chiang, T.H.; Lin, T.D.; Lee, Y.J.; Chu, R.L.; Kwo, J.; Hong, M.
國立政治大學	2011-11	Intrinsic Spin-Dependent Thermal Transport	李尚凡; Huang,S. Y. ; Wang,W. G. ; S. F. Lee; Kwo,J. ; Chien,C. L.
國立成功大學	2011-05-04	The Growth of an Epitaxial ZnO Film on Si(111) with a Gd(2)O(3)(Ga(2)O(3)) Buffer Layer	Lin, B. H.; Liu, W. R.; Yang, S.; Kuo, C. C.; Hsu, C. -H.; Hsieh, W. F.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J.
國立政治大學	2011-04	Magnetization reversal processes of epitaxial Fe3Si films on GaAs(001)	李尚凡; Liu, Y.C.;Chang, P.;Huang, S.Y.;Chang, L.J.;Lin, W.C. ; Lee, S.F. ; Hong, M. ; Kwo, J.
國立政治大學	2011	Demonstration of edge roughness effect on the magnetization reversal of spin valve submicron wires	李尚凡; Hung,H.Y. ;Huang,S.Y. ;Chang,P. ;Lin,W.C. ;Liu,Y.C. ;Lee,S.F. ;Hong,M. ;Kwo,J.
國立臺灣大學	2011	Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy	Chiu, Y.P.; Huang, B.C.; Shih, M.C.; Shen, J.Y.; Chang, P.; Chang, C.S.; Huang, M.L.; Tsai, M.-H.; Hong, M.; Kwo, J.
臺大學術典藏	2011	Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy	Chiu, Y.P.;Huang, B.C.;Shih, M.C.;Shen, J.Y.;Chang, P.;Chang, C.S.;Huang, M.L.;Tsai, M.-H.;Hong, M.;Kwo, J.; Chiu, Y.P.; Huang, B.C.; Shih, M.C.; Shen, J.Y.; Chang, P.; Chang, C.S.; Huang, M.L.; Tsai, M.-H.; Hong, M.; Kwo, J.; YA-PING CHIU
臺大學術典藏	2010	Self-aligned inversion-channel In0.75Ga0.25As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2O3/Ga2O3(Gd2O 3) and ALD-Al2O3 as gate dielectrics	Lin, T.D.;Chiu, H.C.;Chang, P.;Chang, Y.H.;Wu, Y.D.;Hong, M.;Kwo, J.; Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG
國立成功大學	2009-01	Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y2O3 Buffer Layer on Si (111)	Liu, W. R.; Li, Y. H.; Hsieh, W. F.; Hsu, C. H.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J.
臺大學術典藏	2009	Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics	Lin, C.A.;Lin, T.D.;Chiang, T.H.;Chiu, H.C.;Chang, P.;Hong, M.;Kwo, J.; Lin, C.A.; Lin, T.D.; Chiang, T.H.; Chiu, H.C.; Chang, P.; Hong, M.; Kwo, J.; MINGHWEI HONG
國立成功大學	2008-03	Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si(111) using a gamma-Al2O3 buffer layer	Liu, W. R.; Li, Y. H.; Hsieh, Wen-Feng; Hsu, C. H.; Lee, W. C.; Hong, M.; Kwo, J.
臺大學術典藏	2008	Time dependent preferential sputtering in the HfO 2 layer on Si (100)	MINGHWEI HONG; Kwo, J; Hong, M; Hwang, J; Lee, WC; Chang, SJ

Showing items 516-540 of 563 (23 Page(s) Totally)
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