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Showing items 71-120 of 563 (12 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2019-12-27T07:49:42Z	Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si (1 1 1) using a 帠-Al2O3 buffer layer	Liu, W.-R.; Li, Y.-H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:42Z	Atomic-layer-deposited Hf O2 on In0.53 Ga0.47 As: Passivation and energy-band parameters	Chang, Y.C.; Huang, M.L.; Lee, K.Y.; Lee, Y.J.; Lin, T.D.; Hong, M.; Kwo, J.; Lay, T.S.; Liao, C.C.; Cheng, K.Y.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:42Z	Nanometer thick single crystal Y2 O3 films epitaxially grown on Si (111) with structures approaching perfection	Nieh, C.W.; Lee, Y.J.; Lee, W.C.; Yang, Z.K.; Kortan, A.R.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:42Z	Time dependent preferential sputtering in the HfO2 layer on Si(100)	Chang, S.J.;Lee, W.C.;Hwang, J.;Hong, M.;Kwo, J.; Chang, S.J.; Lee, W.C.; Hwang, J.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:41Z	Oxide scalability in Al2 O3 Ga2 O3 (Gd2 O3) In0.20 Ga0.80 AsGaAs heterostructures	Shiu, K.H.; Chiang, C.H.; Lee, Y.J.; Lee, W.C.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:41Z	Growth and structural characteristics of GaN/AIN/nanothick 帠-Al 2O3/Si(111)	Lee, W.C.; Lee, Y.J.; Tung, L.T.; Wu, S.Y.; Lee, C.H.; Hong, M.; Ng, H.M.; Kwo, J.; Hsu, C.H.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:41Z	Transmission electron microscopy characterization of HfO 2/GaAs(001) heterostructures grown by molecular beam epitaxy	Liou, S.C.; Chu, M.-W.; Chen, C.H.; Lee, Y.J.; Chang, P.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:40Z	Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2 O3 as gate dielectric	Lee, C.H.; Shiu, K.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG; Tung, L.T.; Chiu, H.C.; Chang, W.H.; Chang, Y.C.
臺大學術典藏	2019-12-27T07:49:40Z	High-performance self-aligned inversion-channel In0.53 Ga0.47 As metal-oxide-semiconductor field-effect-transistor with Al2 O3 Ga2 O3 (Gd2 O3) as gate dielectrics	Lin, T.D.;Chiu, H.C.;Chang, P.;Tung, L.T.;Chen, C.P.;Hong, M.;Kwo, J.;Tsai, W.;Wang, Y.C.; Lin, T.D.; Chiu, H.C.; Chang, P.; Tung, L.T.; Chen, C.P.; Hong, M.; Kwo, J.; Tsai, W.; Wang, Y.C.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:40Z	Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As	MINGHWEI HONG; Lee, K.Y.; Lee, Y.J.; Chang, P.; Huang, M.L.; Chang, Y.C.; Hong, M.; Kwo, J.
臺大學術典藏	2019-12-27T07:49:40Z	Molecular beam epitaxy grown Ga2 O3 (Gd2 O3) high 庥 dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics	Lee, C.H.; Lin, T.D.; Tung, L.T.; Huang, M.L.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:40Z	Si metal-oxide-semiconductor devices with high 庥 Hf O2 fabricated using a novel MBE template approach followed by atomic layer deposition	Pan, C.H.;Kwo, J.;Lee, K.Y.;Lee, W.C.;Chu, L.K.;Huang, M.L.;Lee, Y.J.;Hong, M.; Pan, C.H.; Kwo, J.; Lee, K.Y.; Lee, W.C.; Chu, L.K.; Huang, M.L.; Lee, Y.J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:39Z	Achieving a low interfacial density of states in atomic layer deposited Al2 O3 on In0.53 Ga0.47 As	Chiu, H.C.; Tung, L.T.; Chang, Y.H.; Lee, Y.J.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:39Z	Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2O3/Ga2O3(Gd2O3) as gate dielectrics	MINGHWEI HONG;Tsai, W.;Kwo, J.;Hong, M.;Lin, C.A.;Chang, P.;Chiu, H.C.;Chen, C.P.;Lin, T.D.; Lin, T.D.; Chen, C.P.; Chiu, H.C.; Chang, P.; Lin, C.A.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:39Z	Inversion n-channel GaN MOSFETs with atomic-layer-deposited Al 2 O 3 as gate dielectrics	Lee, C.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG; Shiu, K.H.; Chiu, H.C.; Chang, W.H.; Chang, Y.C.; MINGHWEI HONG;Tsai, C.C.;Hong, J.M.;Kwo, J.;Hong, M.;Lee, C.H.;Shiu, K.H.;Chiu, H.C.;Chang, W.H.;Chang, Y.C.
臺大學術典藏	2019-12-27T07:49:39Z	Approaching fermi level unpinning in oxide-ino.2gao.8as	MINGHWEI HONG;Hong, M.;Tsai, W.;Wang, W.E.;Kwo, J.;Shiu, K.H.;Lin, D.;Lin, T.D.;Lee, W.C.;Chiang, T.H.; Chiang, T.H.; Lee, W.C.; Lin, T.D.; Lin, D.; Shiu, K.H.; Kwo, J.; Wang, W.E.; Tsai, W.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:39Z	Self-aligned inversion n-channel In0.2Ga0.8As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga2O3(Gd2O3) dielectric	Chen, C.P.; Lin, T.D.; Lee, Y.J.; Chang, Y.C.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:38Z	High 庥 dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties	Chang, W.H.;Lee, C.H.;Chang, P.;Chang, Y.C.;Lee, Y.J.;Kwo, J.;Tsai, C.C.;Hong, J.M.;Hsu, C.-H.;Hong, M.; Chang, W.H.; Lee, C.H.; Chang, P.; Chang, Y.C.; Lee, Y.J.; Kwo, J.; Tsai, C.C.; Hong, J.M.; Hsu, C.-H.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:38Z	Energy-band parameters of atomic layer deposited Al2O 3 and HfO2 on InxGa1-xAs	Huang, M.L.;Chang, Y.C.;Chang, Y.H.;Lin, T.D.;Kwo, J.;Hong, M.; Huang, M.L.; Chang, Y.C.; Chang, Y.H.; Lin, T.D.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:38Z	InGaAs metal oxide semiconductor devices with Ga2O 3(Gd2O3) High-庥 dielectrics for science and technology beyond Si CMOS	Hong, M.;Kwo, J.;Lin, T.D.;Huang, M.L.; Hong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:38Z	Domain matching epitaxial growth of high-quality ZnO film using a Y 2O3 buffer layer on Si (111)	Liu, W.-R.;Li, Y.-H.;Hsieh, W.F.;Hsu, C.-H.;Lee, W.C.;Lee, Y.J.;Hong, M.;Kwo, J.; Liu, W.-R.; Li, Y.-H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:37Z	GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth	Chang, Y.H.;Chiu, H.C.;Chang, W.H.;Kwo, J.;Tsai, C.C.;Hong, J.M.;Hong, M.; Chang, Y.H.; Chiu, H.C.; Chang, W.H.; Kwo, J.; Tsai, C.C.; Hong, J.M.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:37Z	GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxy	Lee, W.C.;Lee, Y.J.;Kwo, J.;Hsu, C.H.;Lee, C.H.;Wu, S.Y.;Ng, H.M.;Hong, M.; Lee, W.C.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, C.H.; Wu, S.Y.; Ng, H.M.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:37Z	Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge	Chu, L.K.;Lee, W.C.;Huang, M.L.;Chang, Y.H.;Tung, L.T.;Chang, C.C.;Lee, Y.J.;Kwo, J.;Hong, M.; Chu, L.K.; Lee, W.C.; Huang, M.L.; Chang, Y.H.; Tung, L.T.; Chang, C.C.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:37Z	Molecular beam epitaxy-grown Al2O3/HfO2 high-庥 dielectrics for germanium	Lee, W.C.;Chin, B.H.;Chu, L.K.;Lin, T.D.;Lee, Y.J.;Tung, L.T.;Lee, C.H.;Hong, M.;Kwo, J.; Lee, W.C.; Chin, B.H.; Chu, L.K.; Lin, T.D.; Lee, Y.J.; Tung, L.T.; Lee, C.H.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:36Z	Inversion-channel GaN MOSFET using atomic-layer-deposited Al 2O3 as gate dielectric	Chang, Y.C.;Chang, W.H.;Chiu, H.C.;Chang, Y.H.;Tung, L.T.;Lee, C.H.;Hong, M.;Kwo, J.;Hong, J.M.;Tsai, C.C.; Chang, Y.C.; Chang, W.H.; Chiu, H.C.; Chang, Y.H.; Tung, L.T.; Lee, C.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:36Z	Self-aligned inversion channel In0.53Ga0.47As N-MOSFETs with ALD-Al2O3and MBE-Al2O3/Ga2O3(Gd2O3) as gate dielectrics	Chiu, H.C.;Lin, T.D.;Chang, P.;Lee, W.C.;Chiang, C.H.;Kwo, J.;Lin, Y.S.;Hsu, S.S.H.;Tsai, W.;Hong, M.; Chiu, H.C.; Lin, T.D.; Chang, P.; Lee, W.C.; Chiang, C.H.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; Tsai, W.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:36Z	Nano-electronics of high 庥 dielectrics on ingaas for key technologies beyond Si CMOS	Lin, T.D.;Chang, P.;Chiu, H.C.;Chang, Y.C.;Lin, C.A.;Chang, W.H.;Lee, Y.J.;Chang, Y.H.;Huang, M.L.;Kwo, J.;Hong, M.; Lin, T.D.; Chang, P.; Chiu, H.C.; Chang, Y.C.; Lin, C.A.; Chang, W.H.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:36Z	Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices	Chu, L.K.;Lin, T.D.;Huang, M.L.;Chu, R.L.;Chang, C.C.;Kwo, J.;Hong, M.; Chu, L.K.; Lin, T.D.; Huang, M.L.; Chu, R.L.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:35Z	Advances on III-V MOSFET for science and technology beyond Si CMOS	Kwo, J.;Lin, T.D.;Huang, M.L.;Chang, P.;Lee, Y.J.;Hong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; Chang, P.; Lee, Y.J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:35Z	InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al 2O3/Ga2O3(Gd2O 3) as a gate dielectric	Lin, T.D.;Chiu, H.C.;Chang, P.;Lee, W.C.;Chinag, T.H.;Kwo, J.;Tsai, W.;Hong, M.; Lin, T.D.; Chiu, H.C.; Chang, P.; Lee, W.C.; Chinag, T.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:35Z	High performance Ga2O3(Gd2O 3)/Ge MOS devices without interfacial layers	Chu, L.K.;Chu, R.L.;Huang, M.L.;Tung, L.T.;Lin, T.D.;Chang, C.C.;Kwo, J.;Hong, M.; Chu, L.K.; Chu, R.L.; Huang, M.L.; Tung, L.T.; Lin, T.D.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:35Z	Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3 ) on Ge(100)	Chu, L.K.;Lin, T.D.;Lee, C.H.;Tung, L.T.;Lee, W.C.;Chu, R.L.;Chang, C.C.;Hong, M.;Kwo, J.; Chu, L.K.; Lin, T.D.; Lee, C.H.; Tung, L.T.; Lee, W.C.; Chu, R.L.; Chang, C.C.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:35Z	Self-aligned inversion-channel In0.75Ga0.25As MOSFETs using MBE-Al2O3/Ga2O3(Gd 2O3) and ALD-Al2O3 as gate dielectrics	Lin, T.D.;Chiu, H.C.;Chang, P.;Chang, Y.H.;Lin, C.A.;Chang, W.H.;Kwo, J.;Tsai, W.;Hong, M.; Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Lin, C.A.; Chang, W.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:34Z	Dc and rf characteristics of self-aligned inversion-channel In 0.53 Ga0.47 As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2 O3 / Ga 2 O3 (Gd2 O3) as gate dielectrics	Lin, T.D.;Chang, P.;Chiu, H.C.;Hong, M.;Kwo, J.;Lin, Y.S.;Hsu, S.S.H.; Lin, T.D.; Chang, P.; Chiu, H.C.; Hong, M.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:34Z	Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2 O3 epitaxial films on Si (111)	Lee, Y.J.;Lee, W.C.;Huang, M.L.;Wu, S.Y.;Nieh, C.W.;Hong, M.;Kwo, J.;Hsu, C.-H.; Lee, Y.J.; Lee, W.C.; Huang, M.L.; Wu, S.Y.; Nieh, C.W.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:34Z	Engineering of threshold voltages in molecular beam epitaxy-grown Al 2 O3 / Ga2 O3 (Gd2 O 3) / In0.2 Ga0.8 As	Wu, Y.D.;Lin, T.D.;Chiang, T.H.;Chang, Y.C.;Chiu, H.C.;Lee, Y.J.;Hong, M.;Lin, C.A.;Kwo, J.; Wu, Y.D.; Lin, T.D.; Chiang, T.H.; Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:34Z	Achieving nearly free fermi-level movement and Vthengineering in Ga2O3(Gd2O3)/In0.2Ga0.8As	Lin, T.D.;Wu, Y.D.;Chang, Y.C.;Chiang, T.H.;Chuang, C.Y.;Lin, C.A.;Chang, W.H.;Chiu, H.C.;Tsai, W.;Kwo, J.;Hong, M.; Lin, T.D.; Wu, Y.D.; Chang, Y.C.; Chiang, T.H.; Chuang, C.Y.; Lin, C.A.; Chang, W.H.; Chiu, H.C.; Tsai, W.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:33Z	Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layers	Chu, L.K.;Chu, R.L.;Lin, T.D.;Lee, W.C.;Lin, C.A.;Huang, M.L.;Lee, Y.J.;Kwo, J.;Hong, M.; Chu, L.K.; Chu, R.L.; Lin, T.D.; Lee, W.C.; Lin, C.A.; Huang, M.L.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:33Z	Al2O3/Ga2O3(Gd 2O3) passivation on In0.20Ga 0.80As/GaAs - Structural intactness with high-temperature annealing	Lee, Y.J.;Lee, C.H.;Tung, L.T.;Chiang, T.H.;Lai, T.Y.;Kwo, J.;Hsu, C.-H.;Hong, M.; Lee, Y.J.; Lee, C.H.; Tung, L.T.; Chiang, T.H.; Lai, T.Y.; Kwo, J.; Hsu, C.-H.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:33Z	Passivation of InGaAs using in situ molecular beam epitaxy Al2 O3 / HfO2 and HfAlO/ HfO2	Chang, P.;Lee, W.C.;Huang, M.L.;Lee, Y.J.;Hong, M.;Kwo, J.; Chang, P.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:32Z	Achieving high-performance Ge MOS devices using high-庥 gate dielectrics Ga2O3(Gd2O3) of sub-nm EOT	Chu, L.K.;Chu, R.L.;Lin, C.A.;Lin, T.D.;Chiang, T.H.;Kwo, J.;Hong, M.; Chu, L.K.; Chu, R.L.; Lin, C.A.; Lin, T.D.; Chiang, T.H.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:32Z	Great reduction of interfacial traps in Al2O3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing	Chang, Y.C.;Merckling, C.;Penaud, J.;Lu, C.Y.;Brammertz, G.;Wang, W.-E.;Hong, M.;Kwo, J.;Dekoster, Caymax, M.;Meuris, M.;Heyns, M.; Chang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; Brammertz, G.; Wang, W.-E.; Hong, M.; Kwo, J.; Dekoster, Caymax, M.; Meuris, M.; Heyns, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:32Z	Effective reduction of interfacial traps in Al2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing	Chang, Y.C.;Merckling, C.;Penaud, J.;Lu, C.Y.;Wang, W.-E.;Dekoster, J.;Meuris, M.;Caymax, M.;Heyns, M.;Kwo, J.;Hong, M.; Chang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; Wang, W.-E.; Dekoster, J.; Meuris, M.; Caymax, M.; Heyns, M.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:31Z	Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2 O3/Ga2O3(Gd2O 3) as the gate dielectric	Chang, W.H.; Chiang, T.H.; Wu, Y.D.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG; Chang, W.H.;Chiang, T.H.;Wu, Y.D.;Hong, M.;Lin, C.A.;Kwo, J.
臺大學術典藏	2019-12-27T07:49:31Z	InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS	Hong, M.;Kwo, J.;Lin, T.D.;Huang, M.L.;Lee, W.C.;Chang, P.; Hong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; Lee, W.C.; Chang, P.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:31Z	Structural characteristics of nanometer thick Gd2O3 films grown on GaN (0001)	Chang, W.H.;Chang, P.;Lai, T.Y.;Lee, Y.J.;Kwo, J.;Hsu, C.-H.;Hong, M.; Chang, W.H.; Chang, P.; Lai, T.Y.; Lee, Y.J.; Kwo, J.; Hsu, C.-H.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:31Z	InGaAs and Ge MOSFETs with a common high 庥 gate dielectric	Lee, W.C.;Lin, T.D.;Chu, L.K.;Chang, P.;Chang, Y.C.;Chu, R.L.;Chiu, H.C.;Lin, C.A.;Chang, W.H.;Chiang, T.H.;Lee, Y.J.;Hong, M.;Kwo, J.; Lee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:31Z	Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO2 as a gate dielectric	Kwo, J.; Lin, Y.S.; Hsu, S.H.; Hong, J.M.; Tsai, C.C.; Hong, M.; MINGHWEI HONG; Chang, W.H.; Chang, Y.H.; Chang, Y.C.; Chang, Y.C.;Chang, W.H.;Chang, Y.H.;Kwo, J.;Lin, Y.S.;Hsu, S.H.;Hong, J.M.;Tsai, C.C.;Hong, M.
臺大學術典藏	2019-12-27T07:49:30Z	Erratum: Attainment of low interfacial trap density absent of a large midgap peak in In0.2 Ga0.8 As by Ga2 O3 (Gd2 O3) passivation (Applied Physics Letters (2011) 98 (062108))	Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kwo, J.; MINGHWEI HONG; Lin, C.A.;Chiu, H.C.;Chiang, T.H.;Lin, T.D.;Chang, Y.H.;Chang, W.H.;Chang, Y.C.;Wang, W.-E.;Dekoster, J.;Hoffmann, T.Y.;Hong, M.;Kwo, J.; Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.

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